公开(公告)号：WO2012170249A3

公开(公告)日：2013-03-14

申请号：PCT/US2012039997

申请日：2012-05-30

Applicant: LAM RES CORP ,  XU QING ,  RUSU CAMELIA ,  MCMILLIN BRIAN K ,  PATERSON ALEXANDER M

Inventor： XU QING ,  RUSU CAMELIA ,  MCMILLIN BRIAN K ,  PATERSON ALEXANDER M

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  H01J37/32972

Abstract: A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.

Abstract translation: 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。 提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动 的沉积气体进入等离子体处理室。 提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止 蚀刻气体流入等离子体处理室。

公开(公告)号：SG10201510080RA

公开(公告)日：2016-07-28

申请号：SG10201510080R

申请日：2015-12-08

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  PATERSON ALEXANDER M ,  RASTGAR NEEMA

Abstract: A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films.

公开(公告)号：SG195296A1

公开(公告)日：2013-12-30

申请号：SG2013089719

申请日：2012-05-30

Applicant: LAM RES CORP

Inventor： XU QING ,  RUSU CAMELIA ,  MCMILLIN BRIAN K ,  PATERSON ALEXANDER M

Abstract: A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.