公开(公告)号：WO2007143585A2

公开(公告)日：2007-12-13

申请号：PCT/US2007070270

申请日：2007-06-01

Applicant: LAM RES CORP ,  KAMP TOM A

Inventor： KAMP TOM A

CPC classification number: H01L21/32139 ,  H01L21/31116

Abstract: A method for forming features in a polysilicon layer is provided. A hardmask layer is formed over the polysilicon layer. A photoresist mask is formed over the hardmask layer. The hardmask layer is etched through the photoresist mask to form a patterned hardmask. The patterned hardmask is trimmed by providing a non-carbon containing trim gas comprising oxygen and a fluorine containing compound, forming a plasma from the trim gas, and trimming the hardmask. Features are etched into the polysilicon layer through the hardmask.

Abstract translation: 提供了一种在多晶硅层中形成特征的方法。 在多晶硅层上形成硬掩模层。 在硬掩模层上形成光致抗蚀剂掩模。 通过光致抗蚀剂掩模蚀刻硬掩模层以形成图案化的硬掩模。 通过提供包含氧和含氟化合物的非碳含量的修整气体，从修整气体形成等离子体并修整硬掩模来修整图案化的硬掩模。 特征通过硬掩模蚀刻到多晶硅层中。

公开(公告)号：WO2004030050A2

公开(公告)日：2004-04-08

申请号：PCT/US0330117

申请日：2003-09-18

Applicant: LAM RES CORP ,  KAMP TOM A ,  MILLER ALAN J ,  VENUGOPAL VIJAYAKUMAR C

Inventor： KAMP TOM A ,  MILLER ALAN J ,  VENUGOPAL VIJAYAKUMAR C

IPC: H01L21/00 ,  H01L21/3065

CPC classification number: H01L21/67253 ,  H01J37/321 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Abstract translation: 描述了用改进的深度控制和再现性来蚀刻晶片中的特征的设备和方法。 该特征以第一蚀刻速率蚀刻，然后以比第一蚀刻速率慢的第二蚀刻速率蚀刻。 使用光学终点设备来确定蚀刻深度并且停止蚀刻，使得该特征具有期望的深度。 两种不同的蚀刻速率提供了高通量和良好的深度控制和可重复性。 该设备包括蚀刻工具，在该蚀刻工具中，卡盘保持待蚀刻的晶片。 定位光学终点设备以测量特征蚀刻深度。 电子控制器与光学终点设备和蚀刻工具通信以控制工具通过蚀刻特征部分地减少蚀刻速率并且停止蚀刻工具，使得该特征被蚀刻到期望的深度。

公开(公告)号：JP2010187023A

公开(公告)日：2010-08-26

申请号：JP2010113921

申请日：2010-05-18

Applicant: Lam Res Corp ,  ラム リサーチ コーポレイション

Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768

CPC classification number: H01L21/67248 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/76804

Abstract: PROBLEM TO BE SOLVED: To provide an etching method in which etching process controllability is improved. SOLUTION: An etching processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor for informing a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to keep the temperature of the chuck at a selectable setting temperature. A first setting temperature and a second setting temperature are selected. The wafer is placed on the chuck and set to the first setting temperature. The wafer is then processed at the first setting temperature for a first period of time and at the second setting temperature for a second period of time. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供蚀刻工艺可控性提高的蚀刻方法。 解决方案：用于蚀刻晶片的蚀刻处理器包括用于保持晶片的卡盘和用于通知晶片温度的温度传感器。 卡盘包括由温度控制系统控制的加热器。 温度传感器可操作地耦合到温度控制系统以将卡盘的温度保持在可选择的设定温度。 选择第一设定温度和第二设定温度。 将晶片放置在卡盘上并设定为第一设定温度。 然后将晶片在第一设定温度下处理第一时间段，并在第二设定温度下处理第二时间段。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：DE60313861T2

公开(公告)日：2008-01-17

申请号：DE60313861

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

公开(公告)号：SG10201510080RA

公开(公告)日：2016-07-28

申请号：SG10201510080R

申请日：2015-12-08

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  PATERSON ALEXANDER M ,  RASTGAR NEEMA

Abstract: A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films.

公开(公告)号：DE60336150D1

公开(公告)日：2011-04-07

申请号：DE60336150

申请日：2003-09-18

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  MILLER ALAN J ,  VENUGOPAL VIJAYAKUMAR C

IPC: H01L21/3065 ,  H01L21/00

公开(公告)号：AU2003275221A1

公开(公告)日：2004-04-19

申请号：AU2003275221

申请日：2003-09-18

Applicant: LAM RES CORP

Inventor： VENUGOPAL VIJAYAKUMAR C ,  KAMP TOM A ,  MILLER ALAN J

IPC: H01L21/00 ,  H01L21/3065

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

公开(公告)号：DE60313861D1

公开(公告)日：2007-06-28

申请号：DE60313861

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

公开(公告)号：AU2003275221A8

公开(公告)日：2004-04-19

申请号：AU2003275221

申请日：2003-09-18

Applicant: LAM RES CORP

Inventor： VENUGOPAL VIJAYAKUMAR C ,  MILLER ALAN J ,  KAMP TOM A

IPC: H01L21/00 ,  H01L21/3065

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

公开(公告)号：AU2003233432A1

公开(公告)日：2003-10-20

申请号：AU2003233432

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON ,  KAMP TOM A ,  GOTTSCHO RICHARD

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768 ,  H01L21/324 ,  H01L21/68

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.