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    METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS
    5.
    发明申请
    METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS 审中-公开
    在铺设过程之后实现平滑侧壁的方法

    公开(公告)号：WO2012154764A3

    公开(公告)日：2013-01-10

    申请号：PCT/US2012036981

    申请日：2012-05-09

    Applicant: LAM RES CORP ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J ,  XU QING ,  HEO SEONGJUN ,  HAM JIN HWAN ,  YOON SANG JOON ,  RUSU CAMELIA

    Inventor： WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J ,  XU QING ,  HEO SEONGJUN ,  HAM JIN HWAN ,  YOON SANG JOON ,  RUSU CAMELIA

    IPC: B81C1/00 ,  C23F1/00 ,  H01L21/302

    CPC classification number: H01L21/30655 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3086

    Abstract: A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

    Abstract translation: 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

    INORGANIC RAPID ALTERNATING PROCESS FOR SILICON ETCH
    6.
    发明申请
    INORGANIC RAPID ALTERNATING PROCESS FOR SILICON ETCH 审中-公开
    无机快速替代硅蚀刻工艺

    公开(公告)号：WO2011126621A3

    公开(公告)日：2012-01-05

    申请号：PCT/US2011026509

    申请日：2011-02-28

    Applicant: LAM RES CORP ,  ASO TSUYOSHI ,  RUSU CAMELIA

    Inventor： ASO TSUYOSHI ,  RUSU CAMELIA

    IPC: H01L21/3065

    CPC classification number: H01L21/76898 ,  H01L21/30655

    Abstract: A method for etching features into a silicon substrate disposed below a mask in a plasma processing chamber is provided. The silicon substrate is etched through the mask comprising a plurality of cycles, wherein each cycle comprises a sidewall deposition phase and an etch phase. The sidewall deposition phase comprises providing a flow of sidewall inorganic deposition phase gas comprising a silicon containing compound gas and at least one of oxygen, nitrogen or NOx, into the plasma processing chamber, forming a plasma from the sidewall deposition phase gas in the plasma processing chamber, and stopping the flow of the sidewall deposition gas into the plasma processing chamber. The etch phase comprises, providing a flow of an etching gas comprising a halogen component, forming a plasma from the etching gas in the plasma processing chamber, and stopping the flow of the etching gas.

    Abstract translation: 提供了一种在等离子体处理室中将特征蚀刻到设置在掩模下方的硅衬底中的方法。 通过包括多个周期的掩模蚀刻硅衬底，其中每个循环包括侧壁沉积阶段和蚀刻阶段。 侧壁沉积阶段包括提供包含含硅化合物气体和氧，氮或NOx中的至少一种的侧壁无机沉积相气体流到等离子体处理室中，在等离子体处理中从侧壁沉积相气体形成等离子体 并且阻止侧壁沉积气体流入等离子体处理室中。 蚀刻阶段包括提供包括卤素组分的蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，并停止蚀刻气体的流动。

    USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH
    7.
    发明申请
    USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH 审中-公开
    在ETCH期间使用与燃气切换同步射频切换的频谱

    公开(公告)号：WO2012170249A3

    公开(公告)日：2013-03-14

    申请号：PCT/US2012039997

    申请日：2012-05-30

    Applicant: LAM RES CORP ,  XU QING ,  RUSU CAMELIA ,  MCMILLIN BRIAN K ,  PATERSON ALEXANDER M

    Inventor： XU QING ,  RUSU CAMELIA ,  MCMILLIN BRIAN K ,  PATERSON ALEXANDER M

    IPC: H01L21/3065

    CPC classification number: H01L21/30655 ,  H01J37/32972

    Abstract: A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.

    Abstract translation: 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。 提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动 的沉积气体进入等离子体处理室。 提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止 蚀刻气体流入等离子体处理室。

    METHOD FOR PROVIDING HIGH ETCH RATE
    8.
    发明申请
    METHOD FOR PROVIDING HIGH ETCH RATE 审中-公开
    提供高刻蚀速率的方法

    公开(公告)号：WO2012170302A3

    公开(公告)日：2013-02-07

    申请号：PCT/US2012040523

    申请日：2012-06-01

    Applicant: LAM RES CORP ,  XU QING ,  RUSU CAMELIA ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J

    Inventor： XU QING ,  RUSU CAMELIA ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J

    IPC: H01L21/3065

    CPC classification number: H01L21/30655 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/76802 ,  H01L21/76898

    Abstract: A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.

    Abstract translation: 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。 每个循环包括沉积阶段和蚀刻阶段。 沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理 室。 蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动 的蚀刻气体进入等离子体处理室。

    HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES
    9.
    发明申请
    HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
    使用各种频率的RF功率的调制的高比例比较

    公开(公告)号：WO2005022623B1

    公开(公告)日：2005-05-26

    申请号：PCT/US2004025406

    申请日：2004-08-06

    Applicant: LAM RES CORP ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

    Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

    IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

    CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

    Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).

    Abstract translation: 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。 向处理室提供蚀刻剂气体（408）。 提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。 可选地，还可以提供第三蚀刻步骤（420）。

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