公开(公告)号：WO2007123677A3

公开(公告)日：2008-11-20

申请号：PCT/US2007007903

申请日：2007-03-27

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

IPC: B23H3/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: H01L21/32115 ,  C25F7/00

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract translation: 提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：WO2008027216A9

公开(公告)日：2008-05-22

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

Abstract translation: 这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统 铜互连的界面粘合。 提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的系统。

公开(公告)号：WO2008027214A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018250

申请日：2007-08-17

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

Inventor： BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

IPC: B05D5/12 ,  B05C13/02 ,  B05D3/00 ,  B29C71/04 ,  C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  H05K3/00

CPC classification number: H01L21/67196 ,  C23C14/22 ,  C23C16/06 ,  C23C16/44 ,  C23C16/45544 ,  C23C16/52 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/38 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/67161 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/6723 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76879

Abstract: The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.

Abstract translation: 实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。 阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。 或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。 一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层的示例性方法，以帮助在集成系统中在铜互连中沉积铜层，以便改善铜互连的电迁移性能 被提供。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将衬底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中的金属层上沉积功能化层。 该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

公开(公告)号：WO2008027215A3

公开(公告)日：2008-11-13

申请号：PCT/US2007018254

申请日：2007-08-17

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

IPC: C23C16/00

CPC classification number: H01L21/67207 ,  C23C16/0227 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76868

Abstract: The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

Abstract translation: 这些实施例提供了集成设备和方法，其为铜互连执行衬底表面处理和膜沉积，具有改善的金属迁移性能和减少的空穴传播。 在一个示例性实施例中，提供了用于执行表面处理和膜沉积的腔室。 腔室包括用于基板表面处理的第一接近头，其配置成分配第一处理气体以处理用于基板表面处理的第一接近头下方的基板表面的一部分。 腔室还包括用于原子层沉积（ALD）的第一接近头，其被配置为顺序地分配第一反应物气体和第一吹扫气体以在用于ALD的第二接近头下面沉积第一ALD膜。

公开(公告)号：WO2008027386A3

公开(公告)日：2008-08-21

申请号：PCT/US2007018924

申请日：2007-08-28

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67184 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67745

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

Abstract translation: 一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

公开(公告)号：WO2008027205A3

公开(公告)日：2008-04-24

申请号：PCT/US2007018212

申请日：2007-08-15

Applicant: LAM RES CORP ,  NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

Inventor： NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

IPC: C23F11/00 ,  H01L21/302 ,  H01L21/312

CPC classification number: C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

Abstract: The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

Abstract translation: 这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。 电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。 功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。 官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。 该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。

公开(公告)号：WO2007078956A3

公开(公告)日：2008-01-03

申请号：PCT/US2006048552

申请日：2006-12-18

Applicant: LAM RES CORP ,  FREER ERIK M ,  DELARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRITZ C

Inventor： FREER ERIK M ,  DELARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRITZ C

IPC: B08B3/00

CPC classification number: B08B3/024 ,  B08B3/003 ,  B08B3/08 ,  B08B6/00 ,  H01L21/67051

Abstract: A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.

Abstract translation: 一种用于清洁其上具有颗粒物质的表面的表面的方法和系统，其特征在于其表面上具有夹带在其中的具有耦合元件的液体的射流。 赋予耦合元件足够的阻力以相对于液体具有相同的移动并使颗粒物质相对于基底移动。

公开(公告)号：WO2007021654A3

公开(公告)日：2007-11-08

申请号：PCT/US2006030773

申请日：2006-08-07

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

IPC: B08B3/00 ,  B08B3/04 ,  H01L21/00

CPC classification number: G03F7/30 ,  B08B3/04 ,  G03F7/3092 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

Abstract: A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.

Abstract translation: 第一接近头被配置为在衬底上限定光致抗蚀剂显影剂溶液的弯液面。 弯液面应限定在第一邻近头部的底部和基底之间。 第二邻近头被配置为在衬底上限定冲洗弯液面并从衬底移除冲洗弯月面。 第二接近头被定位成相对于基板上的第一和第二接近头的遍历方向跟随第一邻近头。 将衬底暴露于光致抗蚀剂显影剂溶液的弯液面使得先前照射在衬底上的光致抗蚀剂材料被显影以形成图案化的光致抗蚀剂层。 第一和第二接近头允许在显影过程中精确地控制光致抗蚀剂显影剂溶液在基底上的停留时间。

公开(公告)号：WO2007005230A3

公开(公告)日：2007-04-26

申请号：PCT/US2006023354

申请日：2006-06-15

Applicant: LAM RES CORP ,  KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

IPC: H01L21/00 ,  C03B33/00 ,  H01L21/02 ,  H01L21/64 ,  H01L21/70

CPC classification number: H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes theresulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract translation: 压力保持在一定体积内，在该体积内半导体晶片所处的压力足以将前体流体的液态保持为非牛顿流体。 前体流体布置成接近待从半导体晶片移除的材料，同时保持前体流体处于液态。 压力在半导体晶片所处的体积内减小，使得体积内设置在晶片上的前体流体转变成非牛顿流体。 前体流体的膨胀和前体流体相对于晶片在转变成非牛顿流体期间的运动导致所产生的非牛顿流体从半导体晶片上去除材料。

公开(公告)号：WO2008027216A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.