公开(公告)号：WO2009097089A3

公开(公告)日：2009-09-24

申请号：PCT/US2009000372

申请日：2009-01-16

Applicant: LAM RES CORP ,  FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

IPC: H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract translation: 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都会影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

公开(公告)号：EP2240957A4

公开(公告)日：2011-06-15

申请号：EP09705169

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

公开(公告)号：SG10201605996VA

公开(公告)日：2016-09-29

申请号：SG10201605996V

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

公开(公告)号：SG187509A1

公开(公告)日：2013-02-28

申请号：SG2013005087

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

Abstract: GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBERThe various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.FIG. 2F