公开(公告)号：WO0173813A3

公开(公告)日：2002-03-14

申请号：PCT/US0108712

申请日：2001-03-16

Applicant: LAM RES CORP ,  BAILEY ANDREW D ,  HEMKER DAVID J

Inventor： BAILEY ANDREW D ,  HEMKER DAVID J

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32688

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed around the periphery of the process chamber configured to produce a magnetic field which establishes a cusp pattern on the wall of the chamber. The cusp pattern on the wall of the chamber defines areas where a plasma might damage or create cleaning problems. The cusp pattern is shifted to improve operation of the substrate processing system and to reduce the damage and/or cleaning problems caused by the plasma's interaction with the wall. Shifting of the cusp pattern can be accomplished by either moving the magnetic array or by moving the chamber wall. Movement of either component may be continuous (that is, spinning one or more magnet elements or all or part of the wall) or incremental (that is, periodically shifting the position of one or more magnet elements or all or part of the wall).

Abstract translation: 用于在处理处理室内处理衬底的同时控制等离子体的体积的等离子体限制装置包括其中等离子体都被点燃并持续进行处理的室。 腔室至少部分地由壁限定，并且还包括等离子体限制装置。 等离子体约束装置包括围绕处理室的周边设置的磁性阵列，其被配置为产生在腔室的壁上建立尖点图案的磁场。 腔室壁上的尖点图案限定了等离子体可能损坏或产生清洁问题的区域。 尖头图案被移动以改善基板处理系统的操作并且减少由等离子体与壁的相互作用引起的损坏和/或清洁问题。 尖点图案的移动可以通过移动磁阵列或通过移动室壁来实现。 任何一个组件的运动可以是连续的（即，旋转一个或多个磁体元件或全部或部分壁）或增量（即，周期性地移动一个或多个磁体元件或全部或部分壁的位置）。

公开(公告)号：WO2009097089A3

公开(公告)日：2009-09-24

申请号：PCT/US2009000372

申请日：2009-01-16

Applicant: LAM RES CORP ,  FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

IPC: H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract translation: 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都会影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

公开(公告)号：EP2240957A4

公开(公告)日：2011-06-15

申请号：EP09705169

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

公开(公告)号：SG10201605996VA

公开(公告)日：2016-09-29

申请号：SG10201605996V

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

公开(公告)号：DE60038811D1

公开(公告)日：2008-06-19

申请号：DE60038811

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: C23C16/507 ,  H01J37/32 ,  B05D7/24 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：SG187509A1

公开(公告)日：2013-02-28

申请号：SG2013005087

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

Abstract: GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBERThe various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.FIG. 2F

公开(公告)号：DE602004032334D1

公开(公告)日：2011-06-01

申请号：DE602004032334

申请日：2004-02-12

Applicant: LAM RES CORP

Inventor： WILCOXSON MARK H ,  BAILEY ANDREW D

IPC: H01J7/24 ,  H01J37/32 ,  H01Q1/36 ,  H01Q7/00

公开(公告)号：SG179482A1

公开(公告)日：2012-04-27

申请号：SG2012017695

申请日：2008-02-14

Applicant: LAM RES CORP

Inventor： SEXTON GREGORY S ,  BAILEY ANDREW D ,  KUTHI ANDRAS ,  KIM YUNSANG

Abstract: OF THE DISCLOSURE The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate. Figure 1A

公开(公告)号：DE60041350D1

公开(公告)日：2009-02-26

申请号：DE60041350

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

公开(公告)号：DE60040611D1

公开(公告)日：2008-12-04

申请号：DE60040611

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.