公开(公告)号：EP2240957A4

公开(公告)日：2011-06-15

申请号：EP09705169

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

公开(公告)号：WO2009097089A3

公开(公告)日：2009-09-24

申请号：PCT/US2009000372

申请日：2009-01-16

Applicant: LAM RES CORP ,  FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

IPC: H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract translation: 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都会影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

公开(公告)号：WO2007038580A3

公开(公告)日：2007-08-09

申请号：PCT/US2006037648

申请日：2006-09-26

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY ANDREW D III

Inventor： KIM YUNSANG ,  BAILEY ANDREW D III

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862

Abstract: Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

Abstract translation: 提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。 所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。 该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分布板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极 被配置为产生清洁等离子体以清洁基板的斜边缘。

公开(公告)号：WO2006031452A3

公开(公告)日：2007-03-01

申请号：PCT/US2005031105

申请日：2005-08-31

Applicant: LAM RES CORP ,  KIM YUNSANG ,  KUTHI ANDRAS

Inventor： KIM YUNSANG ,  KUTHI ANDRAS

IPC: C23C16/50 ,  C23C16/452 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/02071 ,  H01L21/02046 ,  H01L21/31116 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2437

Abstract: An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.

Abstract translation: 公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。 该装置被配置为使用RF产生装置产生大气等离子体。 该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。 该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

公开(公告)号：WO2009114120A3

公开(公告)日：2009-11-12

申请号：PCT/US2009001506

申请日：2009-03-10

Applicant: LAM RES CORP ,  FANG TONG ,  KIM YUNSANG ,  KIM KEECHAN ,  STOJAKOVIC GEORGE

Inventor： FANG TONG ,  KIM YUNSANG ,  KIM KEECHAN ,  STOJAKOVIC GEORGE

IPC: H01L21/3065 ,  H01L21/302

CPC classification number: H01L21/67028 ,  H01J37/32642 ,  H01L21/02087 ,  H01L21/3065

Abstract: A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.

Abstract translation: 提供一种清洁半导体衬底的斜边缘的方法。 将半导体衬底放置在等离子体处理设备的反应室中的衬底支撑件上。 衬底具有覆盖衬底的顶表面和斜面边缘的介电层，该层在斜面边缘的顶点的上方和下方延伸。 将工艺气体引入反应室并通电为等离子体。 斜面边缘用等离子体清洁，以便除去顶点以下的层，而不会移除顶点上方的所有层。

公开(公告)号：WO2008082923A3

公开(公告)日：2008-11-27

申请号：PCT/US2007087673

申请日：2007-12-14

Applicant: LAM RES CORP ,  KIM YUNSANG ,  CHEN JACK ,  FANG TONG ,  BAILEY III ANDREW

Inventor： KIM YUNSANG ,  CHEN JACK ,  FANG TONG ,  BAILEY III ANDREW

IPC: H01L21/461

CPC classification number: H01J37/32706 ,  H01J37/32532 ,  H01J37/32623 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67069

Abstract: Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.

Abstract translation: 在等离子体斜面蚀刻期间用于补救对基板的电弧相关损伤的方法和装置。 等离子体屏蔽设置在衬底之上，以防止在两个环形接地板之间产生的等离子体到达衬底上暴露的金属化。 另外或替代地，可以采用无碳氟化处理源气体和/或在等离子体产生期间逐渐斜升RF偏置功率，以减轻斜面蚀刻期间的电弧相关损伤。 另外或替代地，可以将氦和/或氢加入到工艺源气体中以减轻斜面蚀刻期间的电弧相关损伤。

公开(公告)号：WO2007038514A2

公开(公告)日：2007-04-05

申请号：PCT/US2006037492

申请日：2006-09-26

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY III ANDREW D ,  YOON HYUNGSUK ALEXANDER

Inventor： KIM YUNSANG ,  BAILEY III ANDREW D ,  YOON HYUNGSUK ALEXANDER

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/02087 ,  H01J37/321 ,  H01J37/32623

Abstract: A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.

Abstract translation: 公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。 该装置包括配置用于支撑基板的第一表面的卡盘。 该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形 衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。 所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的所述环形周边部分并且远离所述衬底的中心部分 底物。

公开(公告)号：WO2011028600A3

公开(公告)日：2011-06-23

申请号：PCT/US2010046790

申请日：2010-08-26

Applicant: LAM RES CORP ,  JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

Inventor： JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

IPC: H01L21/3065

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32706 ,  H01J2237/334

Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.

Abstract translation: 一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。 该装置包括电源和气体分配系统。 该布置还包括下电极，其被配置为至少用于支撑衬底。 该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。 该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。 该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

公开(公告)号：WO2007038514B1

公开(公告)日：2008-11-06

申请号：PCT/US2006037492

申请日：2006-09-26

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY III ANDREW D ,  YOON HYUNGSUK ALEXANDER

Inventor： KIM YUNSANG ,  BAILEY III ANDREW D ,  YOON HYUNGSUK ALEXANDER

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/02087 ,  H01J37/321 ,  H01J37/32623

Abstract: A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.

Abstract translation: 公开了一种等离子体处理系统，其包括用于处理基板的等离子体室。 该设备包括配置用于支撑衬底的第一表面的卡盘。 所述设备还包括抗等离子体阻挡层，所述抗等离子体阻挡层相对于所述衬底的第二表面以间隔关系设置，所述第二表面与所述第一表面相对，所述抗等离子体阻挡层基本上屏蔽所述衬底的中心部分并留下环形 衬底的第二表面的外围区域基本上未被等离子体阻挡屏障遮蔽。 该装置还包括至少一个通电电极，该通电​​电极与抗等离子体阻挡层协同操作以从等离子体气体生成受限等离子体，该受限等离子体基本上被限制在衬底的环形周边部分并且远离 衬底。

公开(公告)号：WO2008024792B1

公开(公告)日：2008-06-12

申请号：PCT/US2007076444

申请日：2007-08-21

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY III ANDREW ,  CHEN JACK

Inventor： KIM YUNSANG ,  BAILEY III ANDREW ,  CHEN JACK

IPC: H01L21/02 ,  G03F7/42 ,  H01L21/00 ,  H01L21/311

CPC classification number: H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

Abstract: A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO 2 , CO, C x H y , H 2 , NH 3 , C x H y F z and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

Abstract translation: 提供了一种用于蚀刻衬底的斜面边缘的方法。 在蚀刻层上形成图案化的光刻胶掩模。 清洁斜面边缘包括提供清洁气体，所述清洁气体包括CO 2，CO，C _{H y ，H 2 ，NH 3 ， x h y f z 及其组合， 来自清洁气体的清洁等离子体，并且将斜面边缘暴露于清洁等离子体。 通过光刻胶特征将特征蚀刻到蚀刻层中，并且去除光刻胶掩模。}