公开(公告)号：DE60033312D1

公开(公告)日：2007-03-22

申请号：DE60033312

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY D ,  SCHOEPP M ,  HEMKER J ,  WILCOXSON H ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

公开(公告)号：DE60033312T2

公开(公告)日：2007-11-22

申请号：DE60033312

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY D ,  SCHOEPP M ,  HEMKER J ,  WILCOXSON H ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

公开(公告)号：DE69726308T2

公开(公告)日：2004-08-26

申请号：DE69726308

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  WICKER E ,  MARASCHIN A ,  COOK M ,  SCHOEPP M

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.

公开(公告)号：DE69903301D1

公开(公告)日：2002-11-07

申请号：DE69903301

申请日：1999-06-22

Applicant: LAM RES CORP

Inventor： HOWALD M ,  CHEN L ,  SCHOEPP M

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

公开(公告)号：DE69934000T2

公开(公告)日：2007-09-20

申请号：DE69934000

申请日：1999-03-26

Applicant: LAM RES CORP

Inventor： SCHOEPP M ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

公开(公告)号：DE69934000D1

公开(公告)日：2006-12-28

申请号：DE69934000

申请日：1999-03-26

Applicant: LAM RES CORP

Inventor： SCHOEPP M ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

公开(公告)号：DE69726308D1

公开(公告)日：2003-12-24

申请号：DE69726308

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  WICKER E ,  MARASCHIN A ,  COOK M ,  SCHOEPP M

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.

公开(公告)号：DE69903301T2

公开(公告)日：2003-05-22

申请号：DE69903301

申请日：1999-06-22

Applicant: LAM RES CORP

Inventor： HOWALD M ,  CHEN L ,  SCHOEPP M

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.