公开(公告)号：EP1765541A4

公开(公告)日：2010-03-31

申请号：EP05761079

申请日：2005-06-14

Applicant: LAM RES CORP

Inventor： WIEPKING MARK ,  LYNDAKER BRADFORD J ,  KUTHI ANDRAS ,  FISCHER ANDREAS

IPC: B23K9/00 ,  B23K9/02

CPC classification number: H01J37/32009 ,  H01J37/32082 ,  H01J37/32706

公开(公告)号：WO2004071938A3

公开(公告)日：2004-12-29

申请号：PCT/US0341226

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT ,  ANDERSON THOMAS W

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

CPC classification number: B08B3/12 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  H01L21/67057 ,  H01L21/67253

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

Abstract translation: 清洁衬底（202）的系统和方法包括包括换能器（210）和衬底（202）的兆声波室（206）。 换能器（210）朝向衬底（202）定向。 可变距离d分离换能器（210）和基底（202）。 系统（200）还包括动态可调的RF发生器（212），其具有耦合到换能器的输出。 动态可调RF发生器（212）可以通过振荡器输出（306）电压和RF发生器输出电压的相位的相位比较来控制。 也可以通过监视输出信号的峰值电压并控制RF发生器将峰值电压保持在预定的电压范围内来控制可动态调节的RF发生器（212）。 动态调节的RF发生器（212）也可以通过动态地控制可变直流电源电压来控制。

公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。

公开(公告)号：WO2008036210A3

公开(公告)日：2008-07-31

申请号：PCT/US2007020050

申请日：2007-09-14

Applicant: LAM RES CORP ,  KUTHI ANDRAS ,  HWANG STEPHEN ,  VETTER JAMES C ,  EILENSTINE GREG ,  NGO TUAN ,  WANG RONGPING

Inventor： KUTHI ANDRAS ,  HWANG STEPHEN ,  VETTER JAMES C ,  EILENSTINE GREG ,  NGO TUAN ,  WANG RONGPING

IPC: H01T23/00

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

Abstract: Apparatus and methods are provided to detect and control a voltage potential (68) applied in a plasma chamber (40) for processing a semiconductor wafer (46). The plasma chamber includes circuitry (82) for monitoring and adjusting a pulsed RF bias voltage signal (6 to be applied to a chuck (66) in the plasma chamber, where the chuck is configured to mount the wafer for processing. Further include is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

Abstract translation: 提供了用于检测和控制施加在等离子体室（40）中用于处理半导体晶片（46）的电压电位（68）的装置和方法。 等离子体室包括用于监测和调节脉冲RF偏置电压信号（6）以被施加到等离子体室中的卡盘（66）的电路（82），其中卡盘被配置为安装用于处理的晶片，还包括 反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

公开(公告)号：WO2007038030B1

公开(公告)日：2008-01-24

申请号：PCT/US2006036139

申请日：2006-09-15

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

IPC: H01J7/24 ,  H01L21/302

CPC classification number: H01L21/02087 ,  B08B7/0035

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract translation: 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：WO0145134A9

公开(公告)日：2002-11-14

申请号：PCT/US0042174

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/321

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

Abstract translation: 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：WO2006031452A3

公开(公告)日：2007-03-01

申请号：PCT/US2005031105

申请日：2005-08-31

Applicant: LAM RES CORP ,  KIM YUNSANG ,  KUTHI ANDRAS

Inventor： KIM YUNSANG ,  KUTHI ANDRAS

IPC: C23C16/50 ,  C23C16/452 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/02071 ,  H01L21/02046 ,  H01L21/31116 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2437

Abstract: An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.

Abstract translation: 公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。 该装置被配置为使用RF产生装置产生大气等离子体。 该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。 该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

公开(公告)号：WO2006012003A3

公开(公告)日：2006-07-06

申请号：PCT/US2005021098

申请日：2005-06-14

Applicant: LAM RES CORP ,  WIEPKING MARK ,  LYNDAKER BRADFORD J ,  KUTHI ANDRAS ,  FISCHER ANDREAS

Inventor： WIEPKING MARK ,  LYNDAKER BRADFORD J ,  KUTHI ANDRAS ,  FISCHER ANDREAS

IPC: B23K9/00 ,  B23K9/02

CPC classification number: H01J37/32009 ,  H01J37/32082 ,  H01J37/32706

Abstract: A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

Abstract translation: 公开了一种用于处理半导体衬底的等离子体处理系统中的方法。 等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。 该方法包括在等离子体点火步骤中点燃等离子体。 当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。 该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。 基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

公开(公告)号：WO03096765A2

公开(公告)日：2003-11-20

申请号：PCT/US0313597

申请日：2003-05-01

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32477 ,  H01J37/32623

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Abstract translation: 公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。 等离子体处理室包括在处理基板期间在等离子体处理室中具有朝向等离子体的等离子体面向表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。 等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。 接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

公开(公告)号：WO0145134A2

公开(公告)日：2001-06-21

申请号：PCT/US0042174

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065 ,  H01J37/00

CPC classification number: H01J37/32467 ,  H01J37/321

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

Abstract translation: 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。