公开(公告)号：WO2009062123A2

公开(公告)日：2009-05-14

申请号：PCT/US2008082915

申请日：2008-11-07

Applicant: LAM RES CORP ,  KIM JISOO ,  CHIANG CONAN ,  SHINAGAWA JUN ,  SADJADI S M REZA

Inventor： KIM JISOO ,  CHIANG CONAN ,  SHINAGAWA JUN ,  SADJADI S M REZA

IPC: H01L21/027

CPC classification number: H01L21/31144 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31612 ,  H01L21/31654 ,  H01L21/32139

Abstract: A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.

Abstract translation: 提供了一种用于蚀刻设置在基板上方并且在抗反射涂层（ARC）层下方的蚀刻层和具有掩模特征的图案化有机掩模的方法。 将基板放置在处理室中。 ARC层打开。 形成氧化物间隔物沉积层。 部分去除有机掩模上的氧化物间隔物沉积层，其中氧化物间隔物沉积层的至少顶部被去除。 通过蚀刻去除有机掩模和ARC层。 通过氧化物隔离层沉积层的侧壁蚀刻蚀刻层。 将衬底从处理室中取出。

公开(公告)号：WO2009062123A3

公开(公告)日：2009-07-30

申请号：PCT/US2008082915

申请日：2008-11-07

Applicant: LAM RES CORP ,  KIM JISOO ,  CHIANG CONAN ,  SHINAGAWA JUN ,  SADJADI S M REZA

Inventor： KIM JISOO ,  CHIANG CONAN ,  SHINAGAWA JUN ,  SADJADI S M REZA

IPC: H01L21/027

CPC classification number: H01L21/31144 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31612 ,  H01L21/31654 ,  H01L21/32139

Abstract: A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.

Abstract translation: 提供了一种用于蚀刻设置在衬底上方且位于抗反射涂层（ARC）层和具有掩模特征的图案化有机掩模下方的蚀刻层的方法。 衬底放置在处理室中。 ARC层被打开。 形成氧化物间隔物沉积层。 部分去除有机掩模上的氧化物间隔物沉积层，其中去除了至少氧化物间隔物沉积层的顶部部分。 通过蚀刻去除有机掩模和ARC层。 蚀刻层通过氧化物间隔物沉积层的侧壁被蚀刻。 衬底从处理室中移除。

公开(公告)号：SG193943A1

公开(公告)日：2013-11-29

申请号：SG2013071790

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: A semiconductor substrate processing system includes a processing chamber, a substrate support, and a separate plasma chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion.to. radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

公开(公告)号：SG10201602785TA

公开(公告)日：2016-05-30

申请号：SG10201602785T

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

公开(公告)号：SG10201602780VA

公开(公告)日：2016-05-30

申请号：SG10201602780V

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

公开(公告)号：SG11201402690TA

公开(公告)日：2014-10-30

申请号：SG11201402690T

申请日：2012-12-04

Applicant: LAM RES CORP

Inventor： KOSHIISHI AKIRA ,  VENTZEK PETER L G ,  SHINAGAWA JUN ,  HOLLAND JOHN PATRICK

IPC: H01B13/00

Abstract: A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.