公开(公告)号：KR20200130230A

公开(公告)日：2020-11-18

申请号：KR20207011104

申请日：2018-04-05

Applicant: LAM RES CORP

Inventor： MATYUSHKIN ALEXANDER ,  COMENDANT KEITH LAURENCE ,  HOLLAND JOHN PATRICK

IPC: H01L21/683 ,  B23Q3/15 ,  H01L21/67 ,  H01L21/687 ,  H02N13/00

Abstract: 기판프로세싱시스템용정전척이제공되고베이스플레이트, 베이스플레이트상에배치된중간층, 및상단플레이트를포함한다. 상단플레이트는중간층을통해베이스플레이트에본딩되고기판에정전기적으로클램핑하도록구성된다. 상단플레이트는단극성클램핑전극및 시일링들을포함한다. 단극성클램핑전극은냉각제가스그루브개구부세트들을갖는그루브개구부패턴을포함한다. 시일링들은냉각제가스존들을분리한다. 냉각제가스존들은 4 개이상의냉각제가스존들을포함한다. 냉각제가스존들각각은별개의냉각제가스그루브세트들을포함한다. 상단플레이트는별개의냉각제가스그루브세트들을포함한다. 별개의냉각제가스그루브세트들각각은하나이상의냉각제가스공급홀들을갖고각각의하나의냉각제가스그루브개구부세트들에대응한다.

公开(公告)号：WO9914784A3

公开(公告)日：1999-06-03

申请号：PCT/US9819122

申请日：1998-09-16

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  DEMOS ALEX

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: A vacuum plasma processor for treating a workpiece with an RF plasma has a plasma excitation coil including a peripheral portion supplying a substantial magnetic flux density to peripheral portions of the plasma. Additional conducting segments spatially adjacent to and electrically connected to a segment of the peripheral portion supply additional magnetic flux having a substantial magnetic flux density to the plasma peripheral portions. The additional conductor segments are in each of four corners of the coil, being connected electrically in parallel or series to coil conductor segments forming the corners. In another embodiment, the coil includes several nested conducting corner segments. In different embodiments, the corner segments are (1) coplanar with the remainder of the coil and (2) closer to the plasma than the remainder of the coil. The coil includes two electrically parallel, spiral-like windings, each with an interior terminal connected to one output terminal of a matching network and an output terminal connected via a capacitor to another output terminal of the matching network. The capacitor values and the lengths of the windings relative to the plasma RF excitation wavelength are such that current flowing in the coil has maximum and minimum standing wave values in the peripheral and interior coil portions, respectively. The coil and workpiece peripheries have similar rectangular dimensions and geometries.

Abstract translation: 用RF等离子体处理工件的真空等离子体处理器具有等离子体激励线圈，该等离子体激励线圈包括向等离子体的外围部分提供大量磁通量密度的外围部分。 在空间上与周边部分的一段相邻并电连接的附加导电段向等离子体周边部分提供具有相当大磁通密度的附加磁通量。 额外的导体段位于线圈的四个角中的每一个中，并联或电串联连接到形成角的线圈导体段。 在另一个实施例中，线圈包括几个嵌套的导电角部分。 在不同的实施例中，角部段（1）与线圈的其余部分共面且（2）比线圈的其余部分更接近等离子体。 该线圈包括两个电并联的螺旋状绕组，每个具有连接到匹配网络的一个输出端子的内部端子和经由电容器连接到匹配网络的另一个输出端子的输出端子。 电容器值和绕组相对于等离子体RF激励波长的长度使得在线圈中流动的电流分别在外围和内部线圈部分中具有最大和最小驻波值。 线圈和工件外围具有相似的矩形尺寸和几何形状。

公开(公告)号：DE69839302D1

公开(公告)日：2008-05-08

申请号：DE69839302

申请日：1998-09-16

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  DEMOS ALEX

IPC: H01J37/32

公开(公告)号：SG10202101997SA

公开(公告)日：2021-04-29

申请号：SG10202101997S

申请日：2018-04-05

Applicant: LAM RES CORP

Inventor： MATYUSHKIN ALEXANDER ,  COMENDANT KEITH LAURENCE ,  HOLLAND JOHN PATRICK

公开(公告)号：DE69841496D1

公开(公告)日：2010-03-25

申请号：DE69841496

申请日：1998-09-16

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  DEMOS ALEX

IPC: H01J37/00 ,  H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A vacuum plasma processor for treating a workpiece with an RF plasma has a plasma excitation coil including a peripheral portion supplying a substantial magnetic flux density to peripheral portions of the plasma. Additional conducting segments spatially adjacent to and electrically connected to a segment of the peripheral portion supply additional magnetic flux having a substantial magnetic flux density to the plasma peripheral portions. The additional conductor segments are in each of four corners of the coil, being connected electrically in parallel or series to coil conductor segments forming the corners. In another embodiment, the coil includes several nested conducting corner segments. In different embodiments, the corner segments are (1) coplanar with the remainder of the coil and (2) closer to the plasma than the remainder of the coil. The coil includes two electrically parallel, spiral like windings, each with an interior terminal connected to one output terminal of a matching network and an output terminal connected via a capacitor to another output terminal of the matching network. The capacitor values and the lengths of the windings relative to the plasma RF excitation wavelength are such that current flowing in the coil has maximum and minimum standing wave values in the peripheral and interior coil portions, respectively. The coil and workpiece peripheries have similar rectangular dimensions and geometries.

公开(公告)号：SG10201602777QA

公开(公告)日：2016-05-30

申请号：SG10201602777Q

申请日：2012-03-22

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G

Abstract: A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes a plurality of electrically conductive plates stacked in a layered manner. Dielectric sheets are disposed between each adjacently positioned pair of the plurality of electrically conductive plates. A number of holes are each formed to extend through the plurality of electrically conductive plates and dielectric sheets. The system also includes at least two independently controllable radiofrequency (RF) power sources electrically connected to one or more of the plurality of electrically conductive plates. The RF power sources are independently controllable with regard to frequency and amplitude.

公开(公告)号：SG193943A1

公开(公告)日：2013-11-29

申请号：SG2013071790

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: A semiconductor substrate processing system includes a processing chamber, a substrate support, and a separate plasma chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion.to. radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

公开(公告)号：DE69839302T2

公开(公告)日：2008-07-10

申请号：DE69839302

申请日：1998-09-16

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  DEMOS ALEX

IPC: H01J37/32

公开(公告)号：SG10201602780VA

公开(公告)日：2016-05-30

申请号：SG10201602780V

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

公开(公告)号：SG11201402690TA

公开(公告)日：2014-10-30

申请号：SG11201402690T

申请日：2012-12-04

Applicant: LAM RES CORP

Inventor： KOSHIISHI AKIRA ,  VENTZEK PETER L G ,  SHINAGAWA JUN ,  HOLLAND JOHN PATRICK

IPC: H01B13/00

Abstract: A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.