公开(公告)号：SG10202012976TA

公开(公告)日：2021-01-28

申请号：SG10202012976T

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  WISE RICHARD ,  MAHOROWALA ARPAN ,  VAN CLEEMPUT PATRICK A ,  VAN SCHRAVENDIJK BART J

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.

公开(公告)号：SG10201801132VA

公开(公告)日：2018-09-27

申请号：SG10201801132V

申请日：2018-02-09

Applicant: LAM RES CORP

Inventor： VAN CLEEMPUT PATRICK A ,  VARADARAJAN SESHASAYEE ,  VAN SCHRAVENDIJK BART J

Abstract: METHODTO CREATE AIR GAPS OF THE DISCLOSURE Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as Si02 and SiN can be selectively etched using a plasma formed in an ^-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as Si02 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. 10 A method for selectively etching tin oxide in a presence of Si02, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100 °C. 15 Fig. 2 20 -40-

公开(公告)号：SG10201704783YA

公开(公告)日：2018-01-30

申请号：SG10201704783Y

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  WISE RICHARD ,  MAHOROWALA ARPAN ,  VAN CLEEMPUT PATRICK A ,  VAN SCHRAVENDIJK BART J

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.