公开(公告)号：SG11202112490QA

公开(公告)日：2021-12-30

申请号：SG11202112490Q

申请日：2020-05-15

Applicant: LAM RES CORP

Inventor： LIANG ANDREW ,  SHAMMA NADER ,  WISE RICH ,  SINGHAL AKHIL ,  MAHOROWALA ARPAN ,  BLACHUT GREGORY ,  AUSTIN DUSTIN

IPC: G03F7/20 ,  G03F7/11 ,  H01L21/027

Abstract: A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.

公开(公告)号：SG10201706963VA

公开(公告)日：2018-03-28

申请号：SG10201706963V

申请日：2017-08-25

Applicant: LAM RES CORP

Inventor： MAHOROWALA ARPAN ,  KARIM ISHTAK ,  KUMAR PURUSHOTTAM

Abstract: Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor and oxidizing plasma; (2) exposing the substrate to the plasma at a radio frequency power density of less than about 0.2 W/cm2; and (3) exposing the substrate to the plasma produced from a process gas having an argon to oxidant ratio of at least about 1:12.

公开(公告)号：SG10201704783YA

公开(公告)日：2018-01-30

申请号：SG10201704783Y

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  WISE RICHARD ,  MAHOROWALA ARPAN ,  VAN CLEEMPUT PATRICK A ,  VAN SCHRAVENDIJK BART J

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.

公开(公告)号：SG10202012976TA

公开(公告)日：2021-01-28

申请号：SG10202012976T

申请日：2017-06-12

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  WISE RICHARD ,  MAHOROWALA ARPAN ,  VAN CLEEMPUT PATRICK A ,  VAN SCHRAVENDIJK BART J

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.