公开(公告)号：JP2010157754A

公开(公告)日：2010-07-15

申请号：JP2010031747

申请日：2010-02-16

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： REN DAXING ,  HUBACEK JEROME S ,  WEBB NICHOLAS E

IPC: H01L21/3065 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205

CPC classification number: H01J37/32009 ,  C23C16/4407 ,  H01J37/3255

Abstract: PROBLEM TO BE SOLVED: To provide a silicon part of a semiconductor processing apparatus containing low levels of metal impurities having high mobility in silicon.
SOLUTION: In order to remove metal impurities having adhered during cutting in forming this silicon part of a semiconductor processing apparatus, a treatment and a heat treatment are executed to at least a cut surface of a silicon plate with a solution, and the silicon part reduces metal contamination of a wafer when the silicon part is processed in a plasma atmosphere.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体处理装置的硅部分，其包含在硅中具有高迁移率的低水平的金属杂质。 解决方案：为了在形成半导体处理装置的硅部分时去除切割期间附着的金属杂质，对溶液的至少一个硅板的切割面进行处理和热处理，并且 硅部件在等离子体气氛中加工时，硅部件减少晶片的金属污染。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：DE60333088D1

公开(公告)日：2010-08-05

申请号：DE60333088

申请日：2003-03-21

Applicant: LAM RES CORP

Inventor： REN DAXING ,  HUBACEK JEROME S ,  WEBB NICHOLAS E

IPC: H01L21/00 ,  H01L21/3065 ,  C23C16/44 ,  H01J1/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/30 ,  H01L21/306 ,  H01L21/316

公开(公告)号：AU2003220446A1

公开(公告)日：2003-11-03

申请号：AU2003220446

申请日：2003-03-21

Applicant: LAM RES CORP

Inventor： REN DAXING ,  HUBACEK JEROME S ,  WEBB NICHOLAS E

IPC: H01L21/3065 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/00 ,  H01L21/316 ,  H01L21/306 ,  H01J1/00 ,  H01L21/30

Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.