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1.发明申请SILICON CARBIDE COMPONENTS OF SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUSES TREATED TO REMOVE FREE-CARBON 审中-公开处理去除自由碳的半导体基板加工设备的碳化硅组分
公开(公告)号：WO2005050705A3
公开(公告)日：2006-03-02
申请号：PCT/US2004037945
申请日：2004-11-12
Applicant: LAM RES CORP , REN DAXING
Inventor： REN DAXING
IPC: C23C16/44 , H01J37/32 , H01L20060101 , H01L21/00 , H01L21/302 , H01L21/461 , B08B6/00 , C25F1/00 , C25F3/30 , C25F5/00
CPC classification number: H01L21/67069 , C23C16/4405 , C23C16/4407 , H01J37/32477 , H01J2237/022
Abstract: Silicon carbide components of a plasma processing apparatus, methods of making the components, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates are provided. The silicon carbide components are made by a process that results in free-carbon in the components. The silicon carbide components are treated to remove the free-carbon from at least the surface.
Abstract translation: 提供等离子体处理装置的碳化硅部件，制造部件的方法以及在半导体基板的处理期间使用部件以提供基板的减少的颗粒污染的方法。 碳化硅组分通过在组分中产生游离碳的方法制成。 处理碳化硅组分以从至少表面除去游离碳。
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2.发明申请CLEANING METHODS FOR SILICON ELECTRODE ASSEMBLY SURFACE CONTAMINATION REMOVAL 审中-公开用于硅电极组件表面污染清除的清洁方法
公开(公告)号：WO2006071552A2
公开(公告)日：2006-07-06
申请号：PCT/US2005045460
申请日：2005-12-15
Applicant: LAM RES CORP , REN DAXING , SHIH HONG
Inventor： REN DAXING , SHIH HONG
IPC: H01L21/302 , B08B6/00
CPC classification number: B08B3/08 , C11D3/3947 , C11D7/10 , C11D7/265 , C11D11/0047 , Y10S134/902
Abstract: Silicon electrode assembly decontamination cleaning methods and solutions, which control or eliminate possible chemical attacks of electrode assembly bonding materials, comprise ammonium fluoride, hydrogen peroxide, acetic acid, optionally ammonium acetate, and deionized water.
Abstract translation: 控制或消除电极组合接合材料可能的化学侵蚀的硅电极组件去污清洗方法和解决方案包括氟化铵，过氧化氢，乙酸，任选的乙酸铵和去离子水。
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3.发明公开SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH 有权密封式硅电极，弹性体电层蚀刻以降低颗粒污染结合和LIKE
公开(公告)号：EP1989727A4
公开(公告)日：2010-09-15
申请号：EP07749916
申请日：2007-02-05
Applicant: LAM RES CORP
Inventor： REN DAXING , MAGNI ENRICO , LENZ ERIC , ZHOU REN
IPC: H01L21/302 , H01L21/461
CPC classification number: H01J37/32532 , H01J37/32009 , Y10T156/10
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4.发明公开CLEANING METHODS FOR SILICON ELECTRODE ASSEMBLY SURFACE CONTAMINATION REMOVAL 审中-公开清洁的程序对硅电极组件面源污染消除
公开(公告)号：EP1839330A4
公开(公告)日：2010-08-25
申请号：EP05854223
申请日：2005-12-15
Applicant: LAM RES CORP
Inventor： REN DAXING , SHIH HONG
IPC: H01L21/302 , C11D7/10 , C11D7/26 , C11D11/00 , C23G1/02
CPC classification number: B08B3/08 , C11D3/3947 , C11D7/10 , C11D7/265 , C11D11/0047 , Y10S134/902
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5.发明公开METHODS FOR SILICON ELECTRODE ASSEMBLY ETCH RATE AND ETCH UNIFORMITY RECOVERY 有权方法恢复对硅电极安排的蚀刻速率和ÄTZEINHEITLICHKEIT
公开(公告)号：EP1848597A4
公开(公告)日：2010-04-14
申请号：EP05854136
申请日：2005-12-15
Applicant: LAM RES CORP
Inventor： HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
CPC classification number: H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
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Patent Agency Ranking6.发明公开SILICON CARBIDE COMPONENTS OF SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUSES TREATED TO REMOVE FREE-CARBON 有权脱除无碳经处理SILIZIUMKARBIDKOMPONENTEN半导体基板管理器件
公开(公告)号：EP1691938A4
公开(公告)日：2010-04-14
申请号：EP04810924
申请日：2004-11-12
Applicant: LAM RES CORP
Inventor： REN DAXING
IPC: B08B6/00 , C23C16/44 , C25F1/00 , C25F3/30 , C25F5/00 , H01J37/32 , H01L20060101 , H01L21/00 , H01L21/302 , H01L21/461
CPC classification number: H01L21/67069 , C23C16/4405 , C23C16/4407 , H01J37/32477 , H01J2237/022
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7.发明申请SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH 审中-公开密封弹性体粘结Si电极和类似于减少颗粒污染在电介质蚀刻
公开(公告)号：WO2007094984A3
公开(公告)日：2008-04-17
申请号：PCT/US2007003008
申请日：2007-02-05
Applicant: LAM RES CORP , REN DAXING , MAGNI ENRICO , LENZ ERIC , ZHOU REN
Inventor： REN DAXING , MAGNI ENRICO , LENZ ERIC , ZHOU REN
IPC: H01L21/302 , H01L21/461
CPC classification number: H01J37/32532 , H01J37/32009 , Y10T156/10
Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
Abstract translation: 一种用于半导体衬底加工的等离子体反应室的电极组件，具有具有接合面的背衬构件，具有一侧下表面的内电极和另一侧的接合面，以及具有下表面的外电极 一侧和另一侧的接合表面。 至少一个电极具有凸缘，该凸缘在另一个电极的下表面的至少一部分的下方延伸。
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8.发明申请ACTIVELY HEATED ALUMINUM BAFFLE COMPONENT HAVING IMPROVED PARTICLE PERFORMANCE AND METHODS OF USE AND MANUFACTURE THEREOF 审中-公开具有改进颗粒性能的活性加热铝粉组分及其使用和制备方法
公开(公告)号：WO2007037955A3
公开(公告)日：2007-12-06
申请号：PCT/US2006035238
申请日：2006-09-11
Applicant: LAM RES CORP , SHIH HONG , PENG G GRANT , REN DAXING
Inventor： SHIH HONG , PENG G GRANT , REN DAXING
IPC: H01L21/306 , C23C16/00 , C23C16/455 , C23C16/50 , C25D5/00 , C25D5/44
CPC classification number: H01L21/3065 , C23C16/4401 , C25D11/04 , H01J37/32623 , H01J37/32633 , H01L21/02041 , H01L21/67069
Abstract: An actively heated aluminum baffle component such as a thermal control plate (101) or baffle ring (120) of a showerhead electrode assembly (100) of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer dupng plasma processing compared to an identically shaped component having a Type III anodized surface.
Abstract translation: 诸如等离子体处理室的喷头电极组件（100）的热控制板（101）或挡板环（120）的主动加热的铝挡板部件具有通过电抛光工艺形成的露出的外部氧化铝层。 暴露的外部氧化铝层与由具有III型阳极氧化表面的相同形状的部件相比，由于铝部件和外部氧化铝层复制等离子体处理所经受的差异热应力而产生的缺陷和颗粒最小化。
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9.发明申请METHODS FOR SILICON ELECTRODE ASSEMBLY ETCH RATE AND ETCH UNIFORMITY RECOVERY 审中-公开用于硅电极组装蚀刻速率和蚀刻均匀性恢复的方法
公开(公告)号：WO2006071544A3
公开(公告)日：2007-08-16
申请号：PCT/US2005045361
申请日：2005-12-15
Applicant: LAM RES CORP , HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
Inventor： HUANG TUOCHUAN , REN DAXING , SHIH HONG , ZHOU CATHERINE , YAN CHUN , MAGNI ENRICO , YEN BI MING , HUBACEK JEROME , LIM DAE J , SUNG DOUGYONG
IPC: B24B1/00
CPC classification number: H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
Abstract translation: 用于清洁电极组件的方法，其可用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。
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公开(公告)号：JP2010157754A
公开(公告)日：2010-07-15
申请号：JP2010031747
申请日：2010-02-16
Applicant: Lam Res Corp , ラム リサーチ コーポレーションLam Research Corporation
Inventor： REN DAXING , HUBACEK JEROME S , WEBB NICHOLAS E
IPC: H01L21/3065 , C23C16/44 , C23C16/509 , H01J37/32 , H01L21/205
CPC classification number: H01J37/32009 , C23C16/4407 , H01J37/3255
Abstract: PROBLEM TO BE SOLVED: To provide a silicon part of a semiconductor processing apparatus containing low levels of metal impurities having high mobility in silicon.
SOLUTION: In order to remove metal impurities having adhered during cutting in forming this silicon part of a semiconductor processing apparatus, a treatment and a heat treatment are executed to at least a cut surface of a silicon plate with a solution, and the silicon part reduces metal contamination of a wafer when the silicon part is processed in a plasma atmosphere.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种半导体处理装置的硅部分，其包含在硅中具有高迁移率的低水平的金属杂质。 解决方案：为了在形成半导体处理装置的硅部分时去除切割期间附着的金属杂质，对溶液的至少一个硅板的切割面进行处理和热处理，并且 硅部件在等离子体气氛中加工时，硅部件减少晶片的金属污染。 版权所有（C）2010，JPO＆INPIT
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