Abstract:
An elastomeric joint assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the assembly and a method of processing a semiconductor substrate with the assembly. The elastomeric joint assembly can comprise a part such as an electrode, a window, a liner or other part bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring bonded to an electrode such as a silicon showerhead electrode by an elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.
Abstract:
An elastomeric joint assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the assembly and a method of processing a semiconductor substrate with the assembly. The elastomeric joint assembly can comprise a part such as an electrode, a window, a liner or other part bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring bonded to an electrode such as a silicon showerhead electrode by an elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.
Abstract:
A coupling ring assembly including an edge ring supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.
Abstract:
A coupling ring assembly including an edge ring supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.
Abstract:
An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma reaction chamber having an elastomeric joint, a method for manufacturing the plasma reaction chamber, and a method for treating substrates. SOLUTION: An elastomeric joint assembly can comprise parts such as an electrode, a window, a liner or the like, and/or other parts bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring 42 coupled with the electrode of a silicon shower head electrode 42 or the like by the elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon part of a semiconductor processing apparatus containing low levels of metal impurities having high mobility in silicon. SOLUTION: In order to remove metal impurities having adhered during cutting in forming this silicon part of a semiconductor processing apparatus, a treatment and a heat treatment are executed to at least a cut surface of a silicon plate with a solution, and the silicon part reduces metal contamination of a wafer when the silicon part is processed in a plasma atmosphere. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
Abstract:
An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically andor thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.
Abstract:
AN ELECTRODE ASSEMBLY (40) FOR A PLASMA REACTION CHAMBER WHEREIN PROCESSING OF A SEMICONDUCTOR SUBSTRATE SUCH AS A SINGLE WAFER CAN BE CARRIED OUT, A METHOD OF MANUFACTURE OF THE ELECTRODE ASSEMBLY (40) AND A METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE WITH THE ASSEMBLY. THE ELECTRODE ASSEMBLY (40) INCLUDES A SUPPORT MEMBER (44) SUCH AS A GRAPHITE RING, AN ELECTRODE (42) SUCH AS A SILICON SHOWERHEAD ELECTRODE IN THE FORM OF A CIRCULAR DISK OF UNIFORM THICKNESS AND AN ELASTOMERIC JOINT (46) BETWEEN THE SUPPORT MEMBER AND THE ELECTRODE (42). THE ELASTOMERIC JOINT (46) ALLOWS MOVEMENT BETWEEN THE SUPPORT MEMBER AND THE ELECTRODE (42) TO COMPENSATE FOR THERMAL EXPANSION AS A RESULT OF TEMPERATURE CYCLING OF THE ELECTRODE ASSEMBLY (40). THE ELASTOMERIC JOINT (46) CAN INCLUDE AN ELECTRICALLY AND/OR THERMALLY CONDUCTIVE FILLER AND THE ELASTOMER CAN BE A CATALYST-CURED POLYMER WHICH IS STABLE AT HIGH TEMPERATURES (FIGURE 1)