ELASTOMER BONDED PARTS FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF
    1.
    发明申请
    ELASTOMER BONDED PARTS FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF 审中-公开
    用于等离子体处理的弹性体粘合部件及其制造和使用方法

    公开(公告)号:WO0000999A9

    公开(公告)日:2000-10-12

    申请号:PCT/US9914790

    申请日:1999-06-30

    CPC classification number: H01J37/32009 H01J37/3244 H01J37/32532

    Abstract: An elastomeric joint assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the assembly and a method of processing a semiconductor substrate with the assembly. The elastomeric joint assembly can comprise a part such as an electrode, a window, a liner or other part bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring bonded to an electrode such as a silicon showerhead electrode by an elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

    Abstract translation: 可以执行用于等离子体反应室的弹性体接头组件,其中可以执行诸如单个晶片的半导体衬底的处理,该组件的制造方法以及使用该组件处理半导体衬底的方法。 弹性接头组件可以包括诸如电极,窗口,衬垫或其他部分的部件,该部件通过弹性体材料结合到支撑构件。 在电极组件中,支撑构件可以包括通过弹性体接头结合到诸如硅喷头电极的电极的石墨环。 由于电极组件的温度循环,弹性接头允许支撑构件和电极之间的移动以补偿热膨胀。 弹性体接头可以包括导电和/或导热填料,弹性体可以是在高温下稳定的催化剂固化的聚合物。

    ELASTOMER BONDED PARTS FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF
    2.
    发明公开
    ELASTOMER BONDED PARTS FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF 有权
    ELASTOMER-GEBUNDENE TEILE FUR PLASMAVERFAHREN,DEREN HERSTELLUNG UND VERWENDUNG

    公开(公告)号:EP1105917A4

    公开(公告)日:2003-05-21

    申请号:EP99933616

    申请日:1999-06-30

    Applicant: LAM RES CORP

    CPC classification number: H01J37/32009 H01J37/3244 H01J37/32532

    Abstract: An elastomeric joint assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the assembly and a method of processing a semiconductor substrate with the assembly. The elastomeric joint assembly can comprise a part such as an electrode, a window, a liner or other part bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring bonded to an electrode such as a silicon showerhead electrode by an elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

    Abstract translation: 一种用于等离子体反应室的电极组件,其中可以执行诸如单个晶片的半导体衬底的处理,电极组件的制造方法和使用该组件处理半导体衬底的方法。 电极组件包括诸如石墨环的支撑构件,具有均匀厚度的圆盘形式的诸如硅喷头电极的电极和在支撑构件和电极之间的弹性体接头。 弹性接头允许支撑构件和电极之间的移动,以补偿由于电极组件的温度循环导致的热膨胀。 弹性体接头可以包括导电导热填料,弹性体可以是在高温下稳定的催化剂固化的聚合物。

    ELECTROSTATICALLY CLAMPED EDGE RING FOR PLASMA PROCESSING
    3.
    发明公开
    ELECTROSTATICALLY CLAMPED EDGE RING FOR PLASMA PROCESSING 有权
    ELEKTROSTATISCH FESTGEKLEMMTER RANDRINGFÜRDIE PLASMAVERARBEITUNG

    公开(公告)号:EP1332241A4

    公开(公告)日:2006-08-16

    申请号:EP01977216

    申请日:2001-09-26

    Applicant: LAM RES CORP

    Inventor: HUBACEK JEROME S

    Abstract: A coupling ring assembly including an edge ring supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.

    Abstract translation: 一种边缘环夹紧组件,其中边缘环由静电边缘环卡盘支撑,以及改进等离子体处理室中的边缘环的温度控制的方法。 边缘环可以由诸如硅或碳化硅的导电材料制成,并且可以通过在边缘环的相对表面和边缘环卡盘之间提供诸如氦的传热气体来增强边缘环的温度控制。

    ELECTROSTATICALLY CLAMPED EDGE RING FOR PLASMA PROCESSING
    4.
    发明申请
    ELECTROSTATICALLY CLAMPED EDGE RING FOR PLASMA PROCESSING 审中-公开
    用于等离子体处理的静电夹紧边缘环

    公开(公告)号:WO0231219A8

    公开(公告)日:2002-09-06

    申请号:PCT/US0130286

    申请日:2001-09-26

    Inventor: HUBACEK JEROME S

    Abstract: A coupling ring assembly including an edge ring supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.

    Abstract translation: 一种包括由静电边缘环卡盘支撑的边缘环的耦合环组件以及一种改善等离子体处理室中的边缘环的温度控制的方法。 边缘环可以由诸如硅或碳化硅的导电材料制成,并且边缘环的温度控制可以通过在边缘环和边缘环卡盘的相对表面之间供应诸如氦的传热气体来增强。

    ELECTRODE FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF
    5.
    发明申请
    ELECTRODE FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF 审中-公开
    用于等离子体处理的电极及其制造方法和用途

    公开(公告)号:WO0000998A3

    公开(公告)日:2000-08-10

    申请号:PCT/US9915053

    申请日:1999-06-30

    Applicant: LAM RES CORP

    CPC classification number: H01J37/32009 H01J37/3244 H01J37/32532

    Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

    Abstract translation: 可以执行用于等离子体反应室的电极组件,其中可以执行诸如单个晶片的半导体衬底的处理,制造电极组件的方法以及使用该组件处理半导体衬底的方法。 电极组件包括诸如石墨环之类的支撑构件,诸如呈均匀厚度的圆盘形式的硅喷头电极的电极以及在支撑构件与电极之间的弹性体接头。 由于电极组件的温度循环,弹性接头允许支撑构件和电极之间的移动以补偿热膨胀。 弹性体接头可以包括导电和/或导热填料,弹性体可以是在高温下稳定的催化剂固化的聚合物。

    ELASTOMERIC BONDING MATERIAL FOR PLASMA TREATMENT AND METHOD OF MANUFACTURE AND USE THEREOF

    公开(公告)号:JP2003133296A

    公开(公告)日:2003-05-09

    申请号:JP2002207379

    申请日:2002-07-16

    Applicant: LAM RES CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma reaction chamber having an elastomeric joint, a method for manufacturing the plasma reaction chamber, and a method for treating substrates. SOLUTION: An elastomeric joint assembly can comprise parts such as an electrode, a window, a liner or the like, and/or other parts bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring 42 coupled with the electrode of a silicon shower head electrode 42 or the like by the elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

    Silicon part for plasma reaction chamber
    7.
    发明专利
    Silicon part for plasma reaction chamber 审中-公开
    等离子体反应室的硅部件

    公开(公告)号:JP2010157754A

    公开(公告)日:2010-07-15

    申请号:JP2010031747

    申请日:2010-02-16

    CPC classification number: H01J37/32009 C23C16/4407 H01J37/3255

    Abstract: PROBLEM TO BE SOLVED: To provide a silicon part of a semiconductor processing apparatus containing low levels of metal impurities having high mobility in silicon.
    SOLUTION: In order to remove metal impurities having adhered during cutting in forming this silicon part of a semiconductor processing apparatus, a treatment and a heat treatment are executed to at least a cut surface of a silicon plate with a solution, and the silicon part reduces metal contamination of a wafer when the silicon part is processed in a plasma atmosphere.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种半导体处理装置的硅部分,其包含在硅中具有高迁移率的低水平的金属杂质。 解决方案:为了在形成半导体处理装置的硅部分时去除切割期间附着的金属杂质,对溶液的至少一个硅板的切割面进行处理和热处理,并且 硅部件在等离子体气氛中加工时,硅部件减少晶片的金属污染。 版权所有(C)2010,JPO&INPIT

    9.
    发明专利
    未知

    公开(公告)号:DE69939606D1

    公开(公告)日:2008-10-30

    申请号:DE69939606

    申请日:1999-06-30

    Applicant: LAM RES CORP

    Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically andor thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

    ELECTRODE FOR PLASMA PROCESSES AND METHOD FOR MANUFACTURE AND USE THEREOF

    公开(公告)号:MY120364A

    公开(公告)日:2005-10-31

    申请号:MYPI9902678

    申请日:1999-06-28

    Applicant: LAM RES CORP

    Abstract: AN ELECTRODE ASSEMBLY (40) FOR A PLASMA REACTION CHAMBER WHEREIN PROCESSING OF A SEMICONDUCTOR SUBSTRATE SUCH AS A SINGLE WAFER CAN BE CARRIED OUT, A METHOD OF MANUFACTURE OF THE ELECTRODE ASSEMBLY (40) AND A METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE WITH THE ASSEMBLY. THE ELECTRODE ASSEMBLY (40) INCLUDES A SUPPORT MEMBER (44) SUCH AS A GRAPHITE RING, AN ELECTRODE (42) SUCH AS A SILICON SHOWERHEAD ELECTRODE IN THE FORM OF A CIRCULAR DISK OF UNIFORM THICKNESS AND AN ELASTOMERIC JOINT (46) BETWEEN THE SUPPORT MEMBER AND THE ELECTRODE (42). THE ELASTOMERIC JOINT (46) ALLOWS MOVEMENT BETWEEN THE SUPPORT MEMBER AND THE ELECTRODE (42) TO COMPENSATE FOR THERMAL EXPANSION AS A RESULT OF TEMPERATURE CYCLING OF THE ELECTRODE ASSEMBLY (40). THE ELASTOMERIC JOINT (46) CAN INCLUDE AN ELECTRICALLY AND/OR THERMALLY CONDUCTIVE FILLER AND THE ELASTOMER CAN BE A CATALYST-CURED POLYMER WHICH IS STABLE AT HIGH TEMPERATURES (FIGURE 1)

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