公开(公告)号：WO2005048301A3

公开(公告)日：2006-02-02

申请号：PCT/US2004035980

申请日：2004-10-28

Applicant: LAM RES CORP ,  PATRICK ROGER ,  RICHARDSON BRETT ,  WILLIAMS NORMAN

Inventor： PATRICK ROGER ,  RICHARDSON BRETT ,  WILLIAMS NORMAN

IPC: B23K9/02 ,  C23F1/00 ,  H01J7/24 ,  H01L20060101 ,  H01L21/306 ,  H05B31/26

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H03H7/40

Abstract: An arrangement for processing a semiconductor substrate in a plasma processing system is disclosed. The arrangement includes providing a RF coupling structure having a first terminal and a second terminal, the first terminal being coupled with a first electrical measuring device, the second terminal being coupled with a second electrical measuring device. The arrangement also includes coupling a compensating circuit to the second terminal. The arrangement further includes providing a feedback circuit coupled to receive information from the first electrical measuring device and the second electrical measuring device, an output of the feedback circuit being employed to control the compensating circuit in order to keep a ratio between a first electrical value at the first terminal and a second electrical value at the second terminal substantially at a predefined value.

Abstract translation: 公开了一种在等离子体处理系统中处理半导体衬底的装置。 该装置包括提供具有第一端子和第二端子的RF耦合结构，第一端子与第一电测量装置耦合，第二端子与第二电测量装置耦合。 该布置还包括将补偿电路耦合到第二端子。 该装置还包括提供耦合以从第一电测量装置和第二电测量装置接收信息的反馈电路，反馈电路的输出被用于控制补偿电路，以便保持第一电气值在 第一端子和第二端子处的第二电气值基本上是预定义的值。

公开(公告)号：EP1680810A4

公开(公告)日：2010-01-13

申请号：EP04796735

申请日：2004-10-28

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  RICHARDSON BRETT ,  WILLIAMS NORMAN

IPC: H01J37/32 ,  B23K9/02 ,  C23F1/00 ,  H01J7/24 ,  H01L20060101 ,  H01L21/306 ,  H05B31/26

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H03H7/40

公开(公告)号：WO2011049994A2

公开(公告)日：2011-04-28

申请号：PCT/US2010053264

申请日：2010-10-19

Applicant: LAM RES CORP ,  LONG MAOLIN ,  JAFARIAN-TEHRANI SEYED JAFAR ,  SATO ARTHUR ,  BENJAMIN NEIL MARTIN PAUL ,  WILLIAMS NORMAN

Inventor： LONG MAOLIN ,  JAFARIAN-TEHRANI SEYED JAFAR ,  SATO ARTHUR ,  BENJAMIN NEIL MARTIN PAUL ,  WILLIAMS NORMAN

IPC: H05H1/46 ,  H01L21/3065 ,  H03H7/40

CPC classification number: H01J37/321 ,  H01J37/32174 ,  H01J37/32935

Abstract: A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.

Abstract translation: 一种用于产生等离子体以处理至少晶片的等离子体处理系统。 等离子体处理系统包括用于传导电流以维持等离子体的至少一部分的线圈。 等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。 所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。 等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量相关的信息，并且提供用于控制 提供电流和/或总电流的大小。

公开(公告)号：WO2011008376A3

公开(公告)日：2011-03-10

申请号：PCT/US2010037936

申请日：2010-06-09

Applicant: LAM RES CORP ,  CHOI BRIAN ,  YUN GUNSU ,  VENUGOPAL VIJAYAKUMAR C ,  WILLIAMS NORMAN

Inventor： CHOI BRIAN ,  YUN GUNSU ,  VENUGOPAL VIJAYAKUMAR C ,  WILLIAMS NORMAN

IPC: H01L21/66 ,  H01L21/00 ,  H01L21/02

CPC classification number: H01J37/32935

Abstract: A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.

Abstract translation: 一种便于确定等离子体处理系统（包括等离子体处理室）是否准备好处理晶片的测试系统。 测试系统可以包括存储至少一个测试程序的计算机可读介质。 测试程序可以包括用于当在等离子体处理室中不存在等离子体时接收由至少一个传感器检测到的信号导出的电参数值的代码。 测试程序还可以包括用于使用电参数值和数学模型来生成电模型参数值的代码。 测试程序还可以包括用于将电模型参数值与基线模型参数值信息进行比较的代码。 测试程序还可以包括用于基于比较确定等离子体处理系统的准备状态的代码。 测试系统还可以包括用于执行与测试程序相关联的一个或多个任务的电路硬件。

公开(公告)号：DE69836857T2

公开(公告)日：2007-07-05

申请号：DE69836857

申请日：1998-04-15

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  WILLIAMS NORMAN

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.

公开(公告)号：AU7111298A

公开(公告)日：1998-11-11

申请号：AU7111298

申请日：1998-04-15

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  WILLIAMS NORMAN

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.

公开(公告)号：SG176146A1

公开(公告)日：2011-12-29

申请号：SG2011085099

申请日：2010-06-09

Applicant: LAM RES CORP

Inventor： CHOI BRIAN ,  YUN GUNSU ,  VENUGOPAL VIJAYAKUMAR C ,  WILLIAMS NORMAN

Abstract: A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.

公开(公告)号：DE69713080T2

公开(公告)日：2003-01-16

申请号：DE69713080

申请日：1997-03-27

Applicant: LAM RES CORP

Inventor： WILLIAMS NORMAN

IPC: H01L21/302 ,  C23C16/44 ,  C23C16/455 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065

Abstract: A showerhead includes a plurality of gas inlets for supplying process gas to a semiconductor substrate surface, and a plurality of gas outlets for removing gas and volatile byproducts produced as a result of reaction of the process gas with the substrate surface. Each gas inlet is concentrically positioned within a respective gas outlet. The showerhead improves the utilization of process gas species at the substrate surface by providing gas flow in a direction perpendicular to the substrate surface and avoiding flow of the process gas or volatile byproducts laterally across the substrate surface. The showerhead is useful for uniform stripping of a mask of organic material by direct contact of the incoming reactive gas with the substrate surface and immediate removal of the process gas and volatile byproducts through the concentrically arranged gas outlets.

公开(公告)号：DE69713080D1

公开(公告)日：2002-07-11

申请号：DE69713080

申请日：1997-03-27

Applicant: LAM RES CORP

Inventor： WILLIAMS NORMAN

IPC: H01L21/302 ,  C23C16/44 ,  C23C16/455 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065

Abstract: A showerhead includes a plurality of gas inlets for supplying process gas to a semiconductor substrate surface, and a plurality of gas outlets for removing gas and volatile byproducts produced as a result of reaction of the process gas with the substrate surface. Each gas inlet is concentrically positioned within a respective gas outlet. The showerhead improves the utilization of process gas species at the substrate surface by providing gas flow in a direction perpendicular to the substrate surface and avoiding flow of the process gas or volatile byproducts laterally across the substrate surface. The showerhead is useful for uniform stripping of a mask of organic material by direct contact of the incoming reactive gas with the substrate surface and immediate removal of the process gas and volatile byproducts through the concentrically arranged gas outlets.

公开(公告)号：DE69836857D1

公开(公告)日：2007-02-22

申请号：DE69836857

申请日：1998-04-15

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  WILLIAMS NORMAN

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.