Apparatus and method for plating semiconductor wafers

    公开(公告)号:SG118433A1

    公开(公告)日:2006-01-27

    申请号:SG200504761

    申请日:2005-06-28

    Applicant: LAM RES CORP

    Abstract: An electroplating apparatus (100) for electroplating a surface of a wafer (W) is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head (110) capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

    PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMITY HEAD

    公开(公告)号:SG175595A1

    公开(公告)日:2011-11-28

    申请号:SG2011072907

    申请日:2007-10-05

    Applicant: LAM RES CORP

    Abstract: OF THE DISCLOSUREMethods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.[Figure 3A]

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