公开(公告)号：WO2005024904A3

公开(公告)日：2006-06-15

申请号：PCT/US2004024853

申请日：2004-07-29

Applicant: LAM RES CORP ,  KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

IPC: H01L21/44 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316).

Abstract translation: 提供层（308）中的特征。 在层（308）之上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征（312），其中光致抗蚀剂特征（312）具有第一临界尺寸（316）。 在光致抗蚀剂特征（312）的侧壁上沉积保形层（320），以减少光致抗蚀剂特征（312）的临界尺寸。 特征被蚀刻到层（308）中，其中层（308）特征具有小于第一临界尺寸（316）的第二临界尺寸（324）。

公开(公告)号：SG149047A1

公开(公告)日：2009-01-29

申请号：SG2008094583

申请日：2004-07-29

Applicant: LAM RES CORP

Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768

Abstract: REDUCTION OF FEATURE CRITICAL DIMENSIONS A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316). Fig. 3C