公开(公告)号：WO2005024904A3

公开(公告)日：2006-06-15

申请号：PCT/US2004024853

申请日：2004-07-29

Applicant: LAM RES CORP ,  KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

IPC: H01L21/44 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316).

Abstract translation: 提供层（308）中的特征。 在层（308）之上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征（312），其中光致抗蚀剂特征（312）具有第一临界尺寸（316）。 在光致抗蚀剂特征（312）的侧壁上沉积保形层（320），以减少光致抗蚀剂特征（312）的临界尺寸。 特征被蚀刻到层（308）中，其中层（308）特征具有小于第一临界尺寸（316）的第二临界尺寸（324）。

公开(公告)号：WO2009085672A3

公开(公告)日：2009-09-03

申请号：PCT/US2008086722

申请日：2008-12-12

Applicant: LAM RES CORP ,  CHEBI ROBERT ,  LIN FRANK ,  WINNICZEK JAROSLAW ,  CHEN WAN-LIN ,  MCDONNELL ERIN ,  ZHENG LILY ,  LASSIG STEPHAN ,  BOGART JEFF ,  RUSU CAMELIA

Inventor： CHEBI ROBERT ,  LIN FRANK ,  WINNICZEK JAROSLAW ,  CHEN WAN-LIN ,  MCDONNELL ERIN ,  ZHENG LILY ,  LASSIG STEPHAN ,  BOGART JEFF ,  RUSU CAMELIA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract translation: 提供了一种将特征蚀刻到具有稳态气体流动的硅层中的方法。 提供包含含氧气体和含氟气体的蚀刻气体。 从蚀刻气体提供等离子体。 然后，停止蚀刻气体的流动。

公开(公告)号：WO2006049954A2

公开(公告)日：2006-05-11

申请号：PCT/US2005038373

申请日：2005-10-26

Applicant: LAM RES CORP ,  CHEN WAN-LIN ,  TAKESHITA KENJI ,  ASO TSUYOSHI ,  KAWAGUCHI SEIJI ,  MCCLARD THOMAS ,  MAGNI ENRICO ,  KELLY MICHAEL ,  LUPAN MICHELLE ,  HEFTY ROBERT

Inventor： CHEN WAN-LIN ,  TAKESHITA KENJI ,  ASO TSUYOSHI ,  KAWAGUCHI SEIJI ,  MCCLARD THOMAS ,  MAGNI ENRICO ,  KELLY MICHAEL ,  LUPAN MICHELLE ,  HEFTY ROBERT

IPC: B44C1/22 ,  B08B6/00 ,  H01L21/311

CPC classification number: B08B7/0035 ,  B05D1/62 ,  H01J37/32559 ,  H01L21/31116

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract translation: 提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。 相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。 可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。

公开(公告)号：SG149047A1

公开(公告)日：2009-01-29

申请号：SG2008094583

申请日：2004-07-29

Applicant: LAM RES CORP

Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768

Abstract: REDUCTION OF FEATURE CRITICAL DIMENSIONS A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316). Fig. 3C