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    SOLAR CELL
    1.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：WO2010041846A2

    公开(公告)日：2010-04-15

    申请号：PCT/KR2009/005639

    申请日：2009-10-01

    Applicant: LG ELECTRONICS INC. ,  EO, Youngjoo ,  AHN, Sehwon ,  LEE, Heonmin ,  KO, Jihoon ,  KIM, Sunho ,  JI, Kwangsun

    Inventor： EO, Youngjoo ,  AHN, Sehwon ,  LEE, Heonmin ,  KO, Jihoon ,  KIM, Sunho ,  JI, Kwangsun

    IPC: H01L31/042

    CPC classification number: H01L31/022466

    Abstract: A solar cell is disclosed. The solar cell includes an n-type or p-type amorphous silicon layer, a transparent electrode, and a metal buffer layer between the transparent electrode and the amorphous silicon layer. The metal buffer layer contains at least one of In, Sn, B, Al, Ga, and Zn. When the transparent electrode contains indium tin oxide (ITO), the metal buffer layer contains at least one of In and Sn. When the transparent electrode contains zinc oxide, the metal buffer layer contains at least one of B, Al, Ga, and Zn.

    Abstract translation: 公开了一种太阳能电池。 太阳能电池包括n型或p型非晶硅层，透明电极以及在透明电极和非晶硅层之间的金属缓冲层。 金属缓冲层含有In，Sn，B，Al，Ga和Zn中的至少一种。 当透明电极包含铟锡氧化物（ITO）时，金属缓冲层包含In和Sn中的至少一种。 当透明电极含有氧化锌时，金属缓冲层含有B，Al，Ga和Zn中的至少一种。

    COMPOUND SEMICONDUCTOR SOLAR CELL
    2.
    发明申请
    COMPOUND SEMICONDUCTOR SOLAR CELL 审中-公开

    公开(公告)号：WO2018124641A1

    公开(公告)日：2018-07-05

    申请号：PCT/KR2017/015264

    申请日：2017-12-21

    Applicant: LG ELECTRONICS INC.

    Inventor： CHOI, Wonseok ,  PARK, Jinhee ,  KIM, Soohyun ,  YOON, Wonki ,  LEE, Heonmin

    IPC: H01L31/0735 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02

    CPC classification number: H01L31/0735 ,  H01L31/02168 ,  H01L31/03046 ,  H01L31/0725 ,  Y02E10/544

    Abstract: There is provided A compound semiconductor solar cell, comprising: a first light absorbing layer that includes gallium indium phosphide (GaInP); a first electrode positioned on a first surface of the first light absorbing layer; and a second electrode positioned on a second surface of the first light absorbing layer, wherein the first light absorbing layer includes; a first semiconductor layer that includes GaInP, that is doped as a first conductive type, a second semiconductor layer that includes aluminum gallium indium phosphide (AlGaInP), that is doped as a second conductive type, and a junction buffer layer positioned between the first semiconductor layer and the second semiconductor layer and that includes a first material comprising aluminum and a second material comprising gallium, and wherein in the junction buffer layer, a concentration of the first material on a surface in contact with the second semiconductor layer is larger than the concentration of the first material on a surface in contact with the first semiconductor layer, and a concentration of the second material on the surface in contact with the second semiconductor layer is smaller than the concentration of the second material on the surface in contact with the first semiconductor layer.

    THIN FILM SOLAR CELL MODULE
    3.
    发明申请
    THIN FILM SOLAR CELL MODULE 审中-公开

    公开(公告)号：WO2011053006A3

    公开(公告)日：2011-05-05

    申请号：PCT/KR2010/007461

    申请日：2010-10-28

    Applicant: LG ELECTRONICS INC. ,  MOON, Taeho ,  LEE, Heonmin ,  AHN, Sehwon ,  EO, Youngjoo

    Inventor： MOON, Taeho ,  LEE, Heonmin ,  AHN, Sehwon ,  EO, Youngjoo

    IPC: H01L31/042

    Abstract: A thin film solar cell module is disclosed. The thin film solar cell module includes a substrate and a plurality of cells each including a first electrode positioned on the substrate, a second electrode positioned on the first electrode, and a photoelectric transformation layer positioned between the first electrode and the second electrode. The plurality of cells are divided into a first group and a second group. A plurality of cells included in the first group are electrically connected in series to one another, and a plurality of cells included in the second group are electrically connected in series to one another. The first group and the second group are connected in parallel to each other using a lead wire. The lead wire is positioned on both the first group and the second group.

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