公开(公告)号：WO2018105971A2

公开(公告)日：2018-06-14

申请号：PCT/KR2017/014080

申请日：2017-12-04

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Gunho ,  KIM, Soohyun

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/056 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0693 ,  Y02E10/52 ,  Y02E10/544

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising: a light absorbing layer comprising a compound semiconductor; a first electrode positioned on a front surface of the light absorption layer; a first contact layer positioned between the light absorbing layer and the first electrode; a second electrode positioned on a rear surface of the light absorbing layer and having a sheet shape; and a second contact layer positioned between the light absorbing layer and the second electrode. The second contact layer is partially formed on the rear surface of the light absorbing layer on the projection surface, and the second electrode includes a first portion in direct contact with the second contact layer and a second portion located between the first portions.

公开(公告)号：WO2018155938A1

公开(公告)日：2018-08-30

申请号：PCT/KR2018/002217

申请日：2018-02-22

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Soohyun ,  KIM, Gunho ,  LEE, Hyun ,  CHOI, Wonseok ,  HEO, Younho

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L31/035281 ,  H01L31/022425 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/186 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surfaceof the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surroundingthe defect portion.

公开(公告)号：WO2017146419A1

公开(公告)日：2017-08-31

申请号：PCT/KR2017/001760

申请日：2017-02-17

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Hwang ,  PARK, Sungil ,  KIM, Soohyun ,  YOON, Byungho ,  HAN, Sanghoon ,  JEON, Youngjun

IPC: A47L9/28 ,  B25J9/00 ,  B25J9/10 ,  B25J5/00 ,  B25J13/08 ,  B25J19/02 ,  B25J11/00

CPC classification number: B25J5/005 ,  A47L11/4011 ,  A47L11/4061 ,  A47L2201/04 ,  B25J11/0075 ,  B25J11/0085 ,  B62D55/075 ,  B62D57/024 ,  Y10S901/01

Abstract: A moving robot includes a main body, a driving unit moving the main body, and a cleaning unit performing cleaning on a cleaning area in which the main body is positioned, wherein the driving unit includes a plurality of pulleys, a motor connected to any one of the plurality of pulleys and generating a driving force, a belt rotated in contact with the plurality of pulleys, and a support member connected to some of the plurality of pulleys and changing a position of the pulley such that an area in which the belt is in contact with a ground or an obstacle is maintained to be equal to or greater than a reference area.

Abstract translation: 移动机器人包括主体，使主体移动的驱动单元以及在主体位于其中的清洁区域上执行清洁的清洁单元，其中驱动单元包括多个 与多个带轮中的任一个连接并产生驱动力的电动机;与多个带轮接触旋转的带;以及与多个带轮中的一些连接的支撑部件，并且改变带轮的位置 皮带与地面或障碍物接触的区域被维持为等于或大于参考区域。

公开(公告)号：WO2013151294A1

公开(公告)日：2013-10-10

申请号：PCT/KR2013/002707

申请日：2013-04-02

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Soohyun ,  LEE, Hongcheol ,  CHUNG, Jinwon ,  AHN, Sehwon

IPC: H01L31/075 ,  H01L31/042

CPC classification number: H01L31/03685 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  Y02E10/545 ,  Y02E10/548

Abstract: A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx).

Abstract translation: 薄膜太阳能电池包括位于基板的一个表面上的基板，第一电极和第二电极以及位于第一电极和第二电极之间的光电转换单元。 光电转换单元包括多个光电转换层，每个光电转换层包括p型半导体层，i型半导体层和n型半导体层。 多个光电转换层中的至少一个p型半导体层含有微晶硅（mc-Si）和非晶氧化硅（a-SiOx）。

公开(公告)号：WO2018199555A1

公开(公告)日：2018-11-01

申请号：PCT/KR2018/004583

申请日：2018-04-19

Applicant: LG ELECTRONICS INC.

Inventor： PARK, Jinhee ,  KIM, Soohyun

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/0304

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The method for fabricating a compound semiconductor solar cell comprises forming a first mask layer on a front surface of a compound semiconductor layer of a second region which is a region other than a first region where the front electrode is to be formed; forming a seed metal layer on the front surface of the compound semiconductor layer of the first region and on the first mask layer of the second region; removing the seed metal layer over the first mask layer and the first mask layer; removing a part of the compound semiconductor layer of the second region from the front surface of the compound semiconductor layer by using the seed metal layer of the first region as a mask; forming a second mask layer on the compound semiconductor layer of the second region; forming an electrode metal layer on the seed metal layer not covered by the second mask layer; and removing the second mask layer.

公开(公告)号：WO2018124641A1

公开(公告)日：2018-07-05

申请号：PCT/KR2017/015264

申请日：2017-12-21

Applicant: LG ELECTRONICS INC.

Inventor： CHOI, Wonseok ,  PARK, Jinhee ,  KIM, Soohyun ,  YOON, Wonki ,  LEE, Heonmin

IPC: H01L31/0735 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02

CPC classification number: H01L31/0735 ,  H01L31/02168 ,  H01L31/03046 ,  H01L31/0725 ,  Y02E10/544

Abstract: There is provided A compound semiconductor solar cell, comprising: a first light absorbing layer that includes gallium indium phosphide (GaInP); a first electrode positioned on a first surface of the first light absorbing layer; and a second electrode positioned on a second surface of the first light absorbing layer, wherein the first light absorbing layer includes; a first semiconductor layer that includes GaInP, that is doped as a first conductive type, a second semiconductor layer that includes aluminum gallium indium phosphide (AlGaInP), that is doped as a second conductive type, and a junction buffer layer positioned between the first semiconductor layer and the second semiconductor layer and that includes a first material comprising aluminum and a second material comprising gallium, and wherein in the junction buffer layer, a concentration of the first material on a surface in contact with the second semiconductor layer is larger than the concentration of the first material on a surface in contact with the first semiconductor layer, and a concentration of the second material on the surface in contact with the second semiconductor layer is smaller than the concentration of the second material on the surface in contact with the first semiconductor layer.

公开(公告)号：WO2021177673A1

公开(公告)日：2021-09-10

申请号：PCT/KR2021/002468

申请日：2021-02-26

Applicant: LG ELECTRONICS INC.

Inventor： CHANG, Jaewon ,  LEE, Hyunho ,  KIM, Soohyun

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/62 ,  H01L33/48 ,  H01L33/20 ,  H01L33/00 ,  H01L21/677

Abstract: According to the present disclosure, a substrate for manufacturing a display device has a structure in which a semiconductor light-emitting device package composed of a plurality of electrodes and semiconductor light-emitting devices can be uniformly aligned. As a result, according to the present disclosure, a semiconductor light-emitting device package that has been transferred by a pick-and-place method in the related art may be allowed to be transferred through self-assembly, thereby having an effect of improving process efficiency (improving process speed and reducing time).

公开(公告)号：WO2018190583A1

公开(公告)日：2018-10-18

申请号：PCT/KR2018/004103

申请日：2018-04-06

Applicant: LG ELECTRONICS INC.

Inventor： HEO, Younho ,  KIM, Soohyun ,  LEE, Hyun ,  JEONG, Changhyun

IPC: H01L31/18 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/0392

CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/0304 ,  H01L31/1868 ,  H01L31/1888 ,  H01L31/1892 ,  Y02E10/50

Abstract: According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.

公开(公告)号：WO2018190569A1

公开(公告)日：2018-10-18

申请号：PCT/KR2018/004039

申请日：2018-04-05

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Soohyun ,  LEE, Hyun ,  CHOI, Wonseok ,  HEO, Younho

IPC: H01L31/0304 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/072

CPC classification number: H01L31/0725 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/544

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising a first cell, the first cell including: a first base layer formed of a gallium indium phosphide (GaInP)-based compound semiconductor; a first emitter layer forming a p-n junction with the first base layer; a first window layer positioned on a front surface of the first base layer or the first emitter layer; and a first back surface field layer positioned on a back surface of the first emitter layer or the first base layer, wherein the first window layer of the first cell is formed of a four-component III-V compound semiconductor.

公开(公告)号：WO2018105971A3

公开(公告)日：2018-06-14

申请号：PCT/KR2017/014080

申请日：2017-12-04

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Gunho ,  KIM, Soohyun

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/02

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising: a light absorbing layer comprising a compound semiconductor; a first electrode positioned on a front surface of the light absorption layer; a first contact layer positioned between the light absorbing layer and the first electrode; a second electrode positioned on a rear surface of the light absorbing layer and having a sheet shape; and a second contact layer positioned between the light absorbing layer and the second electrode. The second contact layer is partially formed on the rear surface of the light absorbing layer on the projection surface, and the second electrode includes a first portion in direct contact with the second contact layer and a second portion located between the first portions.