公开(公告)号：KR20070112954A

公开(公告)日：2007-11-28

申请号：KR20060046548

申请日：2006-05-24

Applicant: LG PHILIPS LCD CO LTD

Inventor： OH JAE YOUNG ,  HAN SANG CHUL ,  PARK YONG IN

IPC: G02F1/136

CPC classification number: H01L27/1214 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/1288 ,  H01L29/4908

Abstract: A TFT array substrate and a manufacturing method thereof are provided to form a gate wiring layer and a pixel electrode as the laminating layer of a metal layer and a transparent conductive layer, remove the metal layer of the pixel electrode in post processing, and connect the pixel electrode and a drain electrode, thereby forming a TN mode TFT array substrate by using a photo mask three times in total. A gate wiring, a gate electrode(112a), and a gate pad(122) are formed as the laminating layer of a first metal layer and a transparent conductive layer(102) on a substrate(111). A pixel electrode(117) is formed with an independent pattern between the gate wirings. A gate insulating layer(113) has first and second open regions(161,162) where the pixel electrode and the gate pad are exposed. A data wiring crosses the gate wiring on the gate insulating layer and defines a sub pixel. A source electrode(115a) is diverged from the data wiring. A drain electrode(115b) is spaced from the source electrode and is connected to the pixel electrode. A data pad(125) is formed in an end of the data wiring. A masking layer(141,142,143) covers the data wiring, the source electrode, and the drain electrode. An oxidation preventing layer(151,152) covers the gate pad and the data pad.

Abstract translation: 提供TFT阵列基板及其制造方法，以形成作为金属层和透明导电层的层叠层的栅极布线层和像素电极，在后期处理中除去像素电极的金属层，并将 像素电极和漏电极，从而通过使用光掩模总共三次形成TN模式TFT阵列基板。 在基板（111）上形成栅极布线，栅极电极（112a）和栅极焊盘（122）作为第一金属层和透明导电层（102）的层叠层。 像素电极（117）在栅极布线之间形成有独立的图案。 栅极绝缘层（113）具有露出像素电极和栅极焊盘的第一和第二开放区域（161,162）。 数据线穿过栅极绝缘层上的栅极布线并且限定一个子像素。 源电极（115a）从数据布线发散。 漏电极（115b）与源极间隔开并与像素电极连接。 数据焊盘（125）形成在数据布线的末端。 掩模层（141,142,143）覆盖数据布线，源电极和漏电极。 氧化防止层（151,152）覆盖栅极焊盘和数据焊盘。

公开(公告)号：KR20070078472A

公开(公告)日：2007-08-01

申请号：KR20060008708

申请日：2006-01-27

Applicant: LG PHILIPS LCD CO LTD

Inventor： KIM SOO POOL ,  OH JAE YOUNG

IPC: H01L29/786

CPC classification number: G02F1/13458 ,  G02F1/136227 ,  G02F1/136286

Abstract: A TFT(Thin Film Transistor) array substrate and its manufacturing method are provided to improve the stability of a substrate manufacturing process and to prevent the failure of contact between upper and lower electrodes due to undercut by preventing the generation of the undercut at a predetermined portion between a gate insulating layer and an inorganic protection layer using an improved contact hole structure composed of a contact hole lower portion and a contact hole upper portion with a large width compared to that of the contact hole lower portion. A gate line is formed on a lower substrate. An organic gate insulating layer(146) is formed on the resultant structure to cover the gate line. An inorganic protection layer(152) is formed on the organic gate insulating layer. A gate pad lower electrode(126) is formed on the resultant structure to be connected with the gate line. A first contact hole for exposing the gate pad lower electrode is formed through the inorganic protection layer and the organic gate insulating layer. A gate pad upper electrode(128) is connected to the gate pad lower electrode through the first contact hole. The first contact hole is composed of a lower portion and an upper portion. The width of the upper portion is larger than that of the lower portion in the first contact hole.

Abstract translation: 提供TFT（薄膜晶体管）阵列基板及其制造方法以提高基板制造工艺的稳定性，并且通过防止在预定部分产生底切来防止由于底切而引起的上下电极之间的接触故障 使用与接触孔下部相比具有大的宽度的接触孔下部和接触孔上部构成的改进的接触孔结构，在栅极绝缘层和无机保护层之间。 栅极线形成在下基板上。 在所得结构上形成有机栅极绝缘层（146）以覆盖栅极线。 在有机栅极绝缘层上形成无机保护层（152）。 在所得结构上形成栅极焊盘下电极（126）以与栅极线连接。 通过无机保护层和有机栅极绝缘层形成用于暴露栅极焊盘下部电极的第一接触孔。 栅极焊盘上部电极（128）通过第一接触孔与栅极焊盘下部电极连接。 第一接触孔由下部和上部构成。 上部的宽度大于第一接触孔中的下部的宽度。

公开(公告)号：KR20070112989A

公开(公告)日：2007-11-28

申请号：KR20060046634

申请日：2006-05-24

Applicant: LG PHILIPS LCD CO LTD

Inventor： OH JAE YOUNG ,  JEE YOUNG SEUNG ,  KIM JEONG OH ,  KIM SOO POOL

IPC: G02F1/136

CPC classification number: G02F1/136286 ,  G02F1/1335 ,  G02F2001/136231 ,  H01L29/786

Abstract: An LCD and a manufacturing method thereof are provided to form PR patterns with different heights by using an exposure device including a DMD(Digital Micro mirror Device) chip, thereby reducing the number of masks by not using a diffraction photo mask or a semitransparent mask and accordingly, manufacturing a TFT(Thin Film Transistor) substrate without using the exposure device with the DMD in all manufacturing processes. A method for manufacturing an LCD(Liquid Crystal Display) comprises the following steps of: providing an exposure device(100) where a light source and plural minute mirrors are arranged, wherein the plural minute mirrors are separately and electrically controlled to reflect light from the light source toward a position of a target selectively; forming at least one thin film(221,223) on a substrate(201) for the LCD; forming PR(PhotoResist) on the thin film; arranging the substrate on the position of the target; and driving the light source, controlling each of the minute mirrors of the exposure device, radiating light to the first position of the PR with first light intensity, and radiating light to the second position of the PR with second light intensity; developing the PR and remaining PR patterns(225a,225b) with different heights on the thin film; and patterning the thin film by using the PR patterns as a mask.

Abstract translation: 提供LCD及其制造方法，通过使用包括DMD（数字微镜装置）芯片的曝光装置形成具有不同高度的PR图案，从而通过不使用衍射光掩模或半透明掩模来减少掩模的数量， 因此，在所有制造工艺中不使用具有DMD的曝光装置制造TFT（薄膜晶体管）基板。 一种用于制造LCD（液晶显示器）的方法包括以下步骤：提供设置有光源和多个分钟镜的曝光装置（100），其中多个分钟反射镜被分开并电控制以反射来自 选择性地朝向目标位置的光源; 在用于所述LCD的基板（201）上形成至少一个薄膜（221,223）; 在薄膜上形成PR（PhotoResist）; 将基板布置在目标的位置上; 并驱动光源，控制曝光装置的每个微反射镜，以第一光强度将光照射到PR的第一位置，并以第二光强度将光照射到PR的第二位置; 在薄膜上开发不同高度的PR和剩余PR图案（225a，225b）; 并通过使用PR图案作为掩模对薄膜进行图案化。

公开(公告)号：KR20070103807A

公开(公告)日：2007-10-25

申请号：KR20060035587

申请日：2006-04-20

Applicant: LG PHILIPS LCD CO LTD

Inventor： OH JAE YOUNG

IPC: H01L29/786

CPC classification number: H01L27/124 ,  G02F1/136286 ,  H01L21/28026 ,  H01L29/4908

Abstract: A substrate assembly and a method for manufacturing the same, and a display substrate using the same are provided to repair a gate line and a data line by electrically connecting conductors after coating a conductive pattern on a portion where the conductors in a shape of a bead are damaged or cut. A substrate assembly(100) includes a base member(110) and a conductive pattern(120). The conductive pattern is formed on the base member. A plurality of air gaps are formed inside the conductive pattern by electrically connecting a plurality of conductors(123) of the bead shape. The conductors are made of aluminum, aluminum alloy, gold, gold alloy, silver, silver alloy or the like. The conductive pattern is a gate electrode of a thin film transistor and a gate line connected to the gate electrode.

Abstract translation: 提供了一种基板组件及其制造方法以及使用该基板组件的显示基板，用于通过在将导体图案涂覆在导体图案的部分上的导电图案之后通过电连接导体来修复栅极线和数据线 被损坏或切割。 基板组件（100）包括基部构件（110）和导电图案（120）。 导电图案形成在基底构件上。 通过电连接多个胎圈形状的导体（123），在导电图案的内部形成多个气隙。 导体由铝，铝合金，金，金合金，银，银合金等制成。 导电图案是薄膜晶体管的栅电极和连接到栅电极的栅极线。

公开(公告)号：JP2004214612A

公开(公告)日：2004-07-29

申请号：JP2003359435

申请日：2003-10-20

Applicant: Lg Philips Lcd Co Ltd ,  エルジー フィリップス エルシーディー カンパニー リミテッド

Inventor： OH JAE YOUNG ,  NAM SEUNG HEE

IPC: G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/15 ,  H01L29/786 ,  H01L31/062

CPC classification number: H01L29/78603 ,  H01L27/1214

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film transistor array substrate wherein mobile ions are prevented from infiltrating into a semiconductor layer via gettering effect, neutralization, or the like when a low-grade glass is used for building the substrate. SOLUTION: The method for manufacturing a thin-film transistor array substrate comprises a process of forming a buffer layer on a substrate made of a low-grade glass and a process of building thin-film transistors and picture element electrodes, which include a semiconductor layer, on the buffer layer. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2007183620A

公开(公告)日：2007-07-19

申请号：JP2006338850

申请日：2006-12-15

Applicant: Lg Philips Lcd Co Ltd ,  エルジー フィリップス エルシーディー カンパニー リミテッド

Inventor： LEE HYE SUN ,  OH JAE YOUNG

IPC: G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: G02F1/136213 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

Abstract: PROBLEM TO BE SOLVED: To provide an array substrate for a liquid crystal display device and a method for manufacturing the array substrate, for attaining improvement in productivity by simplifying the manufacturing processes and reducing the number of masks. SOLUTION: The array substrate for a liquid crystal display device is manufactured by using mask processes in a smaller number than a conventional method, which not only simplifies the processes and improves manufacture efficiency but significantly reduces the manufacture cost. In the array substrate for a liquid crystal display device of the present invention, an oxide film is formed as a protective film during forming a channel protective film without separately forming an array substrate protective film, and this prevents failure, improves picture quality as well as reduces a material cost because other equipment and materials are unnecessary. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决问题：为了提供液晶显示装置的阵列基板和阵列基板的制造方法，为了通过简化制造工艺和减少掩模的数量来提高生产率。 解决方案：用于液晶显示装置的阵列基板通过使用比常规方法更小的掩模工艺制造，这不仅简化了工艺并且提高了制造效率，而且显着降低了制造成本。 在本发明的液晶显示装置用阵列基板中，在形成通道保护膜的同时，在形成阵列基板保护膜的同时，形成氧化膜作为保护膜，能够防止故障，提高图像质量 减少材料成本，因为其他设备和材料是不必要的。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007011328A

公开(公告)日：2007-01-18

申请号：JP2006163599

申请日：2006-06-13

Applicant: Lg Philips Lcd Co Ltd ,  エルジー フィリップス エルシーディー カンパニー リミテッド

Inventor： LEE KYOUNG MOOK ,  OH JAE YOUNG ,  SONG KYE CHAN

IPC: G02F1/13 ,  G02F1/1345

CPC classification number: H01L29/41758 ,  G02F1/136259 ,  G02F2001/136263

Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device and a manufacturing method thereof that cut off light leaks caused on the right and left sides of a data line and simplify a repair stage by forming dummy patterns on the right and left sides of the data line and using glass powder for an insulating film.
SOLUTION: The manufacturing method includes the stages of: forming a gate electrode, a gate line, and dummy patterns on a substrate; forming a first insulating film on the gate electrode and gate line; forming a switching element comprising a source electrode, a drain electrode, and an active layer on the gate electrode; forming the data line on the substrate so that the data line crosses the gate line and the dummy pattern is disposed on at least one flank; forming a second insulating film on the substrate; forming a first contact hole exposing a portion of the drain electrode by removing a portion of the second insulating film; and forming a pixel electrode electrically connected to the drain electrode through the first contact hole.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种液晶显示装置及其制造方法，其切断在数据线的左右两侧产生的漏光，并通过在左右方向形成虚拟图案来简化维修阶段 数据线的两侧，并使用玻璃粉作绝缘膜。 解决方案：制造方法包括以下步骤：在基板上形成栅电极，栅极线和虚设图案; 在栅电极和栅极线上形成第一绝缘膜; 在栅电极上形成包括源电极，漏电极和有源层的开关元件; 在所述基板上形成所述数据线，使得所述数据线与所述栅极线交叉，并且所述虚设图案设置在至少一个侧面上; 在所述基板上形成第二绝缘膜; 通过去除所述第二绝缘膜的一部分而形成暴露所述漏电极的一部分的第一接触孔; 以及通过所述第一接触孔形成与所述漏电极电连接的像素电极。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007219493A

公开(公告)日：2007-08-30

申请号：JP2006328649

申请日：2006-12-05

Applicant: Lg Philips Lcd Co Ltd ,  エルジー フィリップス エルシーディー カンパニー リミテッド

Inventor： OH JAE YOUNG ,  KIM SOO POOL

IPC: G02F1/1368 ,  G02F1/1343 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/124 ,  H01L27/1288

Abstract: PROBLEM TO BE SOLVED: To provide an array substrate for a liquid crystal display device with improved productivity by reducing the number of mask processes. SOLUTION: The array substrate includes: a gate line 221 and a gate electrode 222 extending from the gate line 221 formed on a substrate; a data line 261 intersected with the gate line 221 and configured with a gate insulating layer 230, a semiconductor layer 240 and a data metal layer 260; a pixel electrode 281 formed of a first transparent metal layer 281a at a pixel which is defined by the gate line 221 and data line 261; a source electrode 262 extending from the data line 261, and a drain electrode 263 spaced apart from the source electrode 262 to expose a channel; a pattern of a second transparent metal layer 291 formed on the data line 261, the source electrode 262 and the drain electrode 263, and the gate line 221, connecting the drain electrode 263 to the pixel electrode 281m, and having a cut portion over the gate line 221; and a partition wall 293 formed near the second transparent metal layer 291 on the pixel electrode 281. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：通过减少掩模过程的数量来提供一种通过降低生产率的液晶显示装置的阵列基板。 解决方案：阵列基板包括：栅极线221和从形成在基板上的栅极线221延伸的栅电极222; 与栅极线221相交并配置有栅极绝缘层230，半导体层240和数据金属层260的数据线261; 在由栅极线221和数据线261限定的像素处由第一透明金属层281a形成的像素电极281; 从数据线261延伸的源电极262以及与源电极262间隔开以露出沟道的漏电极263; 形成在数据线261上的第二透明金属层291，源电极262和漏电极263以及连接漏电极263与像素电极281m的栅极线221的图案，并且在第 栅极线221; 以及形成在像素电极281上的第二透明金属层291附近的分隔壁293。版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007059876A

公开(公告)日：2007-03-08

申请号：JP2006164456

申请日：2006-06-14

Applicant: Lg Philips Lcd Co Ltd ,  エルジー フィリップス エルシーディー カンパニー リミテッド

Inventor： OH JAE YOUNG ,  KIM SOO POOL

IPC: H01L21/308 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786

CPC classification number: H01L27/1214 ,  H01L21/31111 ,  H01L27/1288 ,  Y10T428/31678 ,  Y10T428/31786 ,  Y10T428/31855 ,  Y10T428/31935 ,  Y10T428/31938 ,  Y10T428/31971

Abstract: PROBLEM TO BE SOLVED: To provide an etching tape and a method of manufacturing an array substrate for a liquid crystal display device using the same. SOLUTION: The etching tape includes a base sheet, and an etching material layer which a gel type etching material is applied and formed on the base sheet. The method of manufacturing the array substrate for the liquid crystal display device includes: a step of forming a gate electrode, a first electrode of storage capacitor and a gate interconnect line on a transparent insulating substrate; a step of forming a gate insulating film, an active layer, an ohmic wetting layer, a source electrode and a drain electrode, forming a dielectric layer and a second electrode of a storage capacitor, and forming data interconnect line; a step of forming a pixel electrode, forming a gate pad electrode and forming a data pad electrode; a step of forming a protective layer; and a step of forming a contact hole by etching a protective layer formed on the gate pad electrode and a protective layer formed on the data pad electrode by using the etching tape. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种蚀刻带和一种制造使用其的液晶显示装置的阵列基板的方法。 解决方案：蚀刻带包括基片和在基片上施加并形成凝胶型蚀刻材料的蚀刻材料层。 制造液晶显示装置用阵列基板的方法包括：在透明绝缘基板上形成栅电极，存储电容器的第一电极和栅极互连线的工序; 形成栅极绝缘膜，有源层，欧姆润湿层，源极和漏电极的步骤，形成存储电容器的电介质层和第二电极，形成数据互连线; 形成像素电极的步骤，形成栅极焊盘电极并形成数据焊盘电极; 形成保护层的步骤; 以及通过使用蚀刻带蚀刻形成在栅极焊盘电极上的保护层和形成在数据焊盘电极上的保护层来形成接触孔的步骤。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：FR2854732B1

公开(公告)日：2007-04-13

申请号：FR0404564

申请日：2004-04-29

Applicant: LG PHILIPS LCD CO LTD

Inventor： LEE KYOUNG MOOK ,  NAM SEUNG HEE ,  OH JAE YOUNG

IPC: G02F1/1337 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

Abstract: A thin film transistor array substrate comprises a thin film transistor (106) including a gate insulating layer, a semiconductor layer, an ohmic contact layer (150), and a source electrode (110) and a drain electrode (112), where the gate insulating layer includes a gate insulating pattern (146) underlying a data line (104) and a transparent electrode material, and covering a gate line (102). A thin film transistor array substrate comprises a gate line formed on a substrate; a data line formed on the substrate intersecting with the gate line to define a pixel region; a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including gate electrode (108) formed on the substrate, a gate insulating layer formed on the gate electrode and the substrate, a semiconductor layer formed on the gate insulating layer, an ohmic contact layer on the semiconductor layer, and a source electrode and a drain electrode on the ohmic contact layer; and a transparent electrode material within the pixel region and connected to the drain electrode of the thin film transistor, where the gate insulating layer includes a gate insulating pattern underlying the data line and the transparent electrode material, and covering the gate line. An independent claim is also included for a method of fabricating a thin film transistor array substrate, comprising forming a first conductive pattern group including a gate line, a gate pad (126), and a gate electrode of a thin film transistor, the thin film transistor connected to the gate line on a substrate; forming a gate insulating film on the substrate including the first conductive pattern group; forming a second conductive pattern group including a data line intersecting the gate line, a source electrode of the thin film transistor connected to the data line, and a drain electrode of the thin film transistor, an ohmic contact layer, and a semiconductor layer for forming a channel region of the thin film transistor; forming a third conductive pattern group including a transparent electrode material connected to the drain electrode; and etching the gate insulating film and the ohmic contact layer using the second and third conductive pattern groups as a mask.