CHEMICALLY-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICROWELL STRUCTURE AND METHOD FOR PRODUCING THE SAME
    1.
    发明申请
    CHEMICALLY-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICROWELL STRUCTURE AND METHOD FOR PRODUCING THE SAME 审中-公开
    具有微孔结构的化学敏感场效应晶体管及其制造方法

    公开(公告)号:WO2018049350A1

    公开(公告)日:2018-03-15

    申请号:PCT/US2017/051010

    申请日:2017-09-11

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括化学敏感的场效应晶体管,其包括具有上表面的浮置栅极导体,穿过第一材料并穿过位于第一材料上的第二材料的一部分延伸的第一开口以及从底部延伸的第二开口 第一个开口位于浮栅导体上表面上的衬层顶部。

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