Abstract:
In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.
Abstract:
An apparatus includes a substrate, a gate structure disposed over the substrate and having an upper surface, a well structure disposed over the substrate and defining a well over the upper surface of the gate structure, a conductive layer disposed on the upper surface of the gate structure and at least partially extending along a wall of the well in the well structure, and a dielectric structure disposed over the well structure and defining an opening to the well.
Abstract:
A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.
Abstract:
In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.
Abstract:
The device includes a material defining a reaction region. The device includes a plurality of chemically-sensitive field effect transistors (chemFET) each having a common floating gate (370) in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically- sensitive field effect transistors indicating an analyte within the reaction region.
Abstract:
A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; annealing the sensor surface in a hydrogen containing atmosphere and annealing the sensor surface in an oxygen atmosphere at a temperature of not greater than 400°C. Further a conformal conductive layer may be formed on top of sensor surface, with parts being on top surface of insulator layer being removed, thus forming a cup-shaped electrode, the top surface of the cup-shaped electrode may be annealed in a hydrogen containing atmosphere and annealed in an oxygen atmosphere at a temperature of not greater than 400°C.
Abstract:
The device includes a material defining a reaction region. The device includes a plurality of chemically-sensitive field effect transistors (chemFET) each having a common floating gate (370) in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically- sensitive field effect transistors indicating an analyte within the reaction region.
Abstract:
In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.
Abstract:
In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.