CHEMICAL SENSORS WITH CONSISTENT SENSOR SURFACE AREAS
    1.
    发明申请
    CHEMICAL SENSORS WITH CONSISTENT SENSOR SURFACE AREAS 审中-公开
    化学传感器与一致的传感器表面区域

    公开(公告)号:WO2014149778A1

    公开(公告)日:2014-09-25

    申请号:PCT/US2014/020887

    申请日:2014-03-05

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口。 该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面,并沿开口的侧壁延伸一段距离,该距离由第一电介质的厚度限定。

    DEEP MICROWELL DESIGNS AND METHODS OF MAKING THE SAME
    2.
    发明申请
    DEEP MICROWELL DESIGNS AND METHODS OF MAKING THE SAME 审中-公开
    DEEP MICROWELL设计及其制造方法

    公开(公告)号:WO2017035338A1

    公开(公告)日:2017-03-02

    申请号:PCT/US2016/048658

    申请日:2016-08-25

    CPC classification number: G01N27/4148 G01N27/4145 H01L29/42324

    Abstract: An apparatus includes a substrate, a gate structure disposed over the substrate and having an upper surface, a well structure disposed over the substrate and defining a well over the upper surface of the gate structure, a conductive layer disposed on the upper surface of the gate structure and at least partially extending along a wall of the well in the well structure, and a dielectric structure disposed over the well structure and defining an opening to the well.

    Abstract translation: 一种设备包括:衬底,设置在衬底上方并具有上表面的栅极结构,设置在衬底上并在栅极结构的上表面上限定阱的阱结构;设置在栅极的上表面上的导电层 结构,并且沿着井的结构中的井的壁至少部分地延伸,以及设置在井结构上并且限定到井的开口的电介质结构。

    METHOD FOR MAKING A WELL DISPOSED OVER A SENSOR

    公开(公告)号:WO2018187511A1

    公开(公告)日:2018-10-11

    申请号:PCT/US2018/026141

    申请日:2018-04-04

    Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.

    CHEMICALLY-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICROWELL STRUCTURE AND METHOD FOR PRODUCING THE SAME
    4.
    发明申请
    CHEMICALLY-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICROWELL STRUCTURE AND METHOD FOR PRODUCING THE SAME 审中-公开
    具有微孔结构的化学敏感场效应晶体管及其制造方法

    公开(公告)号:WO2018049350A1

    公开(公告)日:2018-03-15

    申请号:PCT/US2017/051010

    申请日:2017-09-11

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括化学敏感的场效应晶体管,其包括具有上表面的浮置栅极导体,穿过第一材料并穿过位于第一材料上的第二材料的一部分延伸的第一开口以及从底部延伸的第二开口 第一个开口位于浮栅导体上表面上的衬层顶部。

    METHOD OF FORMING ION SENSORS
    6.
    发明申请

    公开(公告)号:WO2020037264A1

    公开(公告)日:2020-02-20

    申请号:PCT/US2019/046914

    申请日:2019-08-16

    Abstract: A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; annealing the sensor surface in a hydrogen containing atmosphere and annealing the sensor surface in an oxygen atmosphere at a temperature of not greater than 400°C. Further a conformal conductive layer may be formed on top of sensor surface, with parts being on top surface of insulator layer being removed, thus forming a cup-shaped electrode, the top surface of the cup-shaped electrode may be annealed in a hydrogen containing atmosphere and annealed in an oxygen atmosphere at a temperature of not greater than 400°C.

    CHEMICAL SENSOR ARRAY HAVING MULTIPLE SENSORS PER WELL
    7.
    发明申请
    CHEMICAL SENSOR ARRAY HAVING MULTIPLE SENSORS PER WELL 审中-公开
    具有多个传感器的化学传感器阵列

    公开(公告)号:WO2014200775A1

    公开(公告)日:2014-12-18

    申请号:PCT/US2014/040923

    申请日:2014-06-04

    CPC classification number: G01N27/4145 C12Q1/6874 G01N27/414 H01L29/66825

    Abstract: The device includes a material defining a reaction region. The device includes a plurality of chemically-sensitive field effect transistors (chemFET) each having a common floating gate (370) in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically- sensitive field effect transistors indicating an analyte within the reaction region.

    Abstract translation: 该装置包括限定反应区域的材料。 该器件包括多个化学敏感的场效应晶体管(chemFET),每个具有与反应区域连通的公共浮动栅极(370)。 该器件还包括一个电路,以从化学敏感的场效应晶体管获得指示反应区域内的分析物的各自的输出信号。

    CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS
    8.
    发明申请
    CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS 审中-公开
    具有一致传感器表面区域的化学传感器

    公开(公告)号:WO2014149780A1

    公开(公告)日:2014-09-25

    申请号:PCT/US2014/020900

    申请日:2014-03-05

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口,该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。

    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT
    9.
    发明申请
    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT 审中-公开
    具有薄导电元件的化学器件

    公开(公告)号:WO2014149779A1

    公开(公告)日:2014-09-25

    申请号:PCT/US2014/020892

    申请日:2014-03-05

    Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

    Abstract translation: 在一个实施方式中,描述了化学装置。 传感器包括化学敏感的场效应晶体管,其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。

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