公开(公告)号：JPH1065276A

公开(公告)日：1998-03-06

申请号：JP8901497

申请日：1997-04-08

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES N ,  CHO ALFRED Y ,  CHU SUNG-NEE G ,  HWANG WEN-YEN

IPC: H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To establish a reproducible process by heating a semiconductor body up to a mass transferring temperature in a vacuum chamber, and exposing the patternized main surface for a specified time during which a change in shape, characterized by nonplanar surfaces, of a P-flux from a solid P-flux source occurs by mass transfer. SOLUTION: The directions of the grooves of a grating 10, formed by etching on the surface (100) 11 of an InP wafer, are parallel to the direction [0-11], and they are about 60nm deep, has sharp sidewalls and sharp corners, and induce grating strains, so they are smoothed (mass-transferred). When the grating 10 is heated at 480 deg.C for five minutes under a P-flux (from a solid source) of 4×10 Torr, sharp characteristic portions are rounded and their depth is reduced to 30nm. Since low-temperature treatment is used through an As source is used as an option at this time, it becomes possible to reduce the diffusion of dopants, and to establish a repeatable process. Furthermore, it enables inducing thermal oxidation desorption and producing molecularly clean surfaces.

公开(公告)号：CA2200124A1

公开(公告)日：1997-11-22

申请号：CA2200124

申请日：1997-03-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES N ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  HWANG WEN-YEN

IPC: H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S3/18

公开(公告)号：CA2200124C

公开(公告)日：2000-04-18

申请号：CA2200124

申请日：1997-03-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES N ,  CHU SUNG-NEE GEORGE ,  HWANG WEN-YEN ,  CHO ALFRED YI

IPC: H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S3/18

Abstract: Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface (11) of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art. An exemplary and preferred application of the method is in grating formation and overgrowth in InP-based DFB lasers.