公开(公告)号：JPH104242A

公开(公告)日：1998-01-06

申请号：JP6578297

申请日：1997-03-19

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  JEROME FAIST ,  HUTCHINSON ALBERT LEE ,  CARLO SIRTORI ,  SIVCO DEBORAH LEE

IPC: H01S5/00 ,  H01S5/34 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To enable conducting a laser oscillation operation at high temperature by a method wherein an active region is comprised of a wave function amplitude increasing structure, with which the amplitude of wave function is increased on the barrier layer arranged between a quantum well and an I/R region. SOLUTION: The first region comprises a quantum well(QW), the first one has the second and the third energy state of charge carrier. The third energy state is higher than the second energy state, and the second and third wave functions of charge carrier is accomplished. The wave function is selected in such a manner that electrons undergo the emission transition from the third energy state to the second energy state is received while a QC laser is in operation. The first active region has a wave function increasing structure with which the amplitude of the third wave function in the first barrier arranged between the first QW and the I/R region on the upstream side of directly above the first active region is increased. As a result, a QC laser, with which a laser can be oscillated at high temperature, can be obtained.