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公开(公告)号：JPH104242A
公开(公告)日：1998-01-06
申请号：JP6578297
申请日：1997-03-19
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED YI , JEROME FAIST , HUTCHINSON ALBERT LEE , CARLO SIRTORI , SIVCO DEBORAH LEE
Abstract: PROBLEM TO BE SOLVED: To enable conducting a laser oscillation operation at high temperature by a method wherein an active region is comprised of a wave function amplitude increasing structure, with which the amplitude of wave function is increased on the barrier layer arranged between a quantum well and an I/R region. SOLUTION: The first region comprises a quantum well(QW), the first one has the second and the third energy state of charge carrier. The third energy state is higher than the second energy state, and the second and third wave functions of charge carrier is accomplished. The wave function is selected in such a manner that electrons undergo the emission transition from the third energy state to the second energy state is received while a QC laser is in operation. The first active region has a wave function increasing structure with which the amplitude of the third wave function in the first barrier arranged between the first QW and the I/R region on the upstream side of directly above the first active region is increased. As a result, a QC laser, with which a laser can be oscillated at high temperature, can be obtained.
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公开(公告)号：JP2000012983A
公开(公告)日：2000-01-14
申请号：JP16456299
申请日：1999-06-11
Applicant: LUCENT TECHNOLOGIES INC
Inventor： BAILLARGEON JAMES NELSON , CAPASSO FEDERICO , CHO ALFRED Y , GMACHI CLAIRE F , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE , TREDICUCCI ALESSANDRO
Abstract: PROBLEM TO BE SOLVED: To easily transport a large quantity of electrons through the injector of an injector region in each repeated unit having the injector region and an active area by sympathetically vibrating the low energy level of one active region with the high energy level of its downstream-side adjacent active area. SOLUTION: A quantum cascade laser 10 is composed of an InP substrate 11, a lower optically immobilized region 12, a waveguide core region 13, an upper optically immobilized area 14, and upper and lower contacts 15 and 16 with which the laser 10 is electrically brought into contact. The waveguide core region 13 is provided with many similar repeated units and each repeated unit is provided with an injector region and an active region. The injector region is made to sympathetically vibrate the lower energy level in the active region with the high energy level of the active region of its directly adjacent repeated unit on the downstream side under an appropriate electric bias, and the movement of charge carriers is carried out easily by selecting the quantum well layer and/or barrier layer of the injector region.
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公开(公告)号：JPH11284287A
公开(公告)日：1999-10-15
申请号：JP31153598
申请日：1998-11-02
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED Y , FAIST JEROME , HUTCHINSON ALBERT LEE , SIRTORI CARLO , SIVCO DEBORAH LEE , ALESSANDRO TOREDIKUCCHI
Abstract: PROBLEM TO BE SOLVED: To provide a device for mounting a double wavelength quantum cascade photon source. SOLUTION: A quantum cascade(QC) photon source has two different wavelengths which are both medium infrared rays normally which can be released at the same time. This can be realized by a structure of semiconductor layers in which electrons are injected into an energy level E3 and then are forcefully cascade connected to an inter medium level E2 before they reach a ground state E1 in an operation area. In these operations, photons of energy E3 -E2 (wavelength λ1 ) and E2 -E1 (wavelength λ2 ) are released. The double wavelength photon source according to the present invention can be used for various purposes, for example, for determining absorption amount of gas sample at wavelengths λ1 and λ2 and generally for determining density of a specified chemical compound in a sample.
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公开(公告)号：JPH11266062A
公开(公告)日：1999-09-28
申请号：JP1425799
申请日：1999-01-22
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED Y , CHU SUNG-NEE GEORGE , FAIST JEROME , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE
Abstract: PROBLEM TO BE SOLVED: To provide a laser which can be used advantageously for absorption spectroscopy, such as emission monitoring. SOLUTION: A quantum cascaded(QC) laser is equipped with a multilayered core region composed of first semiconductor material layers and second semiconductor material layers, which are possessed of lattice constants a1 and a2 which are respectively and alternately arranged. The first material layer is so selected as to make its lattice constant a1 satisfy a1 >a0 [a0 denotes a lattice constant of a substrate (typically InP)], and the second material layer is so selected as to make its lattice constant a2 satisfy a2 >a0 . The materials of these layers are so selected as to satisfy |ΔEc |>520 meV, wherein ΔEc denotes the conduction band gap between the first and second material layer. The multilayered core is equipped with plural multilayer repeated units which are substantially the same. The material and thickness of the repeated unit are so selected as to provide a distortion correction for the repeat unit. It is preferable that a QC laser of this invention be equipped with a distributed feedback mechanism (e.g. Bragg lattice) so selected as to ensure the QC laser of the emission of single mode laser beams, and the QC laser can be designed so as to operate on a first atmospheric window wavelength of typically about 3 to 5 μm.
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公开(公告)号：JP2002076516A
公开(公告)日：2002-03-15
申请号：JP2001205754
申请日：2001-07-06
Applicant: LUCENT TECHNOLOGIES INC
Inventor： BAILLARGEON JAMES NELSON , CAPASSO FEDERICO , CHO ALFRED Y , GMACHI CLAIRE F , HUTCHINSON ALBERT LEE , HWANG HAROLD YOONSUNG , PAIELLA ROBERTO , SERGENT ARTHUR M , SIVCO DEBORAH LEE , ALESSANDRO TOREDIKUCCHI
Abstract: PROBLEM TO BE SOLVED: To provide ability for finely controlling a central wavelength through waveguide coating without introducing a loss or non-linear refraction factor significant for dielectric materials or waveguide process having a low absorption rate within an intermediate IR range, and having high insulation durability for enabling high-power/high-temperature operation in ISB laser technology, through low loss mesa dielectric coating for providing efficient heat conduction through the side wall of mesa, by laterally sealing light without increasing threshold current density for lasing and further through low loss coating on a comparatively narrow mesa. SOLUTION: In a mesa structure semiconductor laser 10, a stripe structure contact 18 is specified on the top of the mesa, and patterned dielectric coating to be used for providing significant waveguide property contains chalcogenide glass 16. Especially, the application to an inter-sub-band (quantum cascade, for example,) is described.
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Patent Agency Ranking
公开(公告)号：JP2001320136A
公开(公告)日：2001-11-16
申请号：JP2001136193
申请日：2001-05-07
Applicant: LUCENT TECHNOLOGIES INC
Inventor： BAILLARGEON JAMES NELSON , CAPASSO FEDERICO , YI CHO ALFRED , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , PAIELLA ROBERT , SIVCO DEBORAH LEE
Abstract: PROBLEM TO BE SOLVED: To provide a laser system where a self-mode synchronization is realized by laser transition itself. SOLUTION: A quantum cascade laser which utilizes inter-subband transition having a large nonlinear refractive index generates pico-second pulse of intermediate infrared light. A Kerr lens mode synchronization of QC laser is realized by nonlinearity in refractive index caused by laser transition is subband. The throttle in a cavity which is required for converting a QC self-convergence mechanism into loss modulation is realized with such QC laser waveguide as; (1) a layer with large optical loss which is separated from a semiconductor material by a relatively thin dielectrics layer, or (2) a relatively long laser waveguide. In an application example, a layer of large loss for mode connection is formed of metal, and so arranged as to constitute one of electrodes of a laser device.
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公开(公告)号：JP2002158404A
公开(公告)日：2002-05-31
申请号：JP2001201723
申请日：2001-07-03
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , YI CHO ALFRED , CHU SUNG-NEE GEORGE , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , SERGENT ARTHUR M , SIVCO DEBORAH LEE , TREDICUCCI ALESSANDRO , MICHAEL CLEMONT WANK
Abstract: PROBLEM TO BE SOLVED: To provide an ISB(inter-subband) SL(superlattice) emitter which comprises an almost flat mini band as well as a wave function which is spatially symmetric, and permits independent control of an applied electric field, derred operating wavelength, shape of the wave function, and energy position of the remaining state the mini band. SOLUTION: An RT region of an ISP optical emitter 10 comprises a pre-bias SL, and a plurality of split quantum wells (SPQWs). Here, the SPQW is a quantum well which is divided into a plurality of sub-wells by at least one barrier layer which is so thin that the energy state on upper side and lower side is separated over its natural width, to contribute to different mini bands in respective RT regions. On the contrary, the adjoining SPQWs are jointed each other by another barrier layer of such thickness as the mini band is generated across the RT regions.
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公开(公告)号：JP2001291929A
公开(公告)日：2001-10-19
申请号：JP2001046367
申请日：2001-02-22
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , YI CHO ALFRED , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE , TREDICUCCI ALESSANDRO
Abstract: PROBLEM TO BE SOLVED: To realize a laser of relatively long wavelength, which will not become extremely thick and still not be technically difficult to manufacture, such as like a DFB device. SOLUTION: A surface plasmon laser 10 has an active region 12 formed as an insulation ridge structure, and a metal surface layer 24 disposed in the major axis direction adjacent to the active region 12 along a ridge. According to this structure, surface plasmon propagation is formed, and power loss involved in invasion depth (skin depth) into metal is reduced greatly for a wavelength longer than 15 μm. A long wavelength laser is prepared, by using a large mode confinement in the reduced thickness of a waveguide layer (reduced from the conventional thickness of about 9 μm to 4 μm or smaller) which is obtained accordingly. The metal surface layer 24 has a metal grating (periodical) surface structure and DFB surface plasmon layer, which enables single mode light emission is formed thereby.
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公开(公告)号：JP2000138420A
公开(公告)日：2000-05-16
申请号：JP21262699
申请日：1999-07-27
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED Y , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE , FAIST JEROME , SIRTORI CARLO
Abstract: PROBLEM TO BE SOLVED: To constitute a guide mode of a surface plasmon propagated along a light guide interface by forming the interface between the materials having permittivity of opposite signs in a clad area. SOLUTION: A long-wavelength semiconductor laser 10 is composed of an active area 12 and at least one guide interface 14. The interface 14 is based on a surface plasmon. The interface 14 is formed of a pair of layers 14.1 and 14.2 having permittivity of opposite signs. For example, the layer 14.1 is formed of a semiconductor having a positive permittivity and the layer 14.2 is formed of a metal having a negative permittivity. The guide mode in the active area 12 is supported at least partly by an electromagnetic surface wave (surface plasmon) at the metal-semiconductor interface 14. Since the amplification of light waves exponentially decreases in two directions perpendicular to the interface 14, no additional clad layer is required.
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公开(公告)号：JPH11330629A
公开(公告)日：1999-11-30
申请号：JP11280899
申请日：1999-04-20
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , YI CHO ALFRED , FAIST JEROME , GMACHL CLAIRE F , NARIMANOV EVGUENI E , NOECKEL JENS U , SIVCO DEBORAH LEE , STONE ALFRED DOUGLAS
Abstract: PROBLEM TO BE SOLVED: To provide a microcylinder type solid-state laser having by for an elevated output power and directivity of the output beam. SOLUTION: A solid-state laser 10 comprises a cylindrical resonator 12 having a curved boundary, and solid-state active region 12.1 located in the resonator, which is capable of generating a laser beam when it is pumped appropriately. The resonator has a comparatively high effective refractive index n (n>2, generally n>3) and a deformed shape sufficient for supporting at least a liberation mode (e.g. a V-mode or bow-tie type mode; the latter is preferable for generating a directive output of a comparatively high power), and for a specific example of a III-V compound semiconductor quantum cascade microcylindrical laser device, the resonator has a shape deformed according to a flat quadrupole deformation function from a circular shape.
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