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公开(公告)号:JP2001274650A
公开(公告)日:2001-10-05
申请号:JP2001032113
申请日:2001-02-08
Applicant: LUCENT TECHNOLOGIES INC
Inventor: KOWACH GLEN ROBERT
IPC: H01L41/09 , H01L41/083 , H01L41/18 , H01L41/22 , H03B5/32 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02 , H03H9/17
Abstract: PROBLEM TO BE SOLVED: To provide a thin film zinc oxide resonator having higher crystalline performance and orientation without giving any effect on its resistivity and to provide its manufacturing method. SOLUTION: This invention discloses the manufacturing method of the resonator. This method includes a step that provides a substrate base (50) having a dielectric layer. Then an adhesive layer (115) is formed on the dielectric layer and a new creation promoting film (120) is formed on the adhesive layer. Succeedingly a zinc oxide layer (125) is formed on the new creation promoting film and an upper side conductive layer (130) is formed on the zinc oxide layer.
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公开(公告)号:CA2336492A1
公开(公告)日:2001-09-15
申请号:CA2336492
申请日:2001-03-01
Applicant: LUCENT TECHNOLOGIES INC
Inventor: SCHNEEMEYER LYNN FRANCES , HARTMAN ROBERT LOUIS , BYLSMA RICHARD BENDICKS , ACKERMAN DAVID ALAN , LINES MALCOLM ELLIS , KOCH THOMAS LAWSON , KOWACH GLEN ROBERT
IPC: G02B6/12 , G02B1/02 , G02B5/28 , G02B6/34 , G02B6/42 , G02B7/00 , G02B26/00 , G02F1/01 , G02F1/21 , H01S5/068 , H01S5/125 , G02F1/00 , H04J14/02 , G02F1/29
Abstract: The thermo-optic behavior of an optical path over a range of temperatures .DELTA.T is controlled by determining a figure-of merit (FOM) for the optical path and including in the path a body of crystalline material that enables the conditions specified by the FO M to be satisfied. The crystalline material is highly transparent at a wavelength .lambda. of radiation propagating in the path, and it has a coefficient of thermal expansion (CTE) and a refractive index n such that the CTE and dn/dT are mutually adapted to satisfy the FOM over the range .DELTA.T. In on e embodiment, the CTE and dn/dT of an etalon compensate one another so as to perform frequency discrimination that is essentially temperature insensitive over the range .DELTA.T. In a preferred embodiment of the optical etalon the crystalline material comprises LiCaAlF6.
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公开(公告)号:BR0100190A
公开(公告)日:2001-10-09
申请号:BR0100190
申请日:2001-01-29
Applicant: LUCENT TECHNOLOGIES INC
Inventor: KOWACH GLEN ROBERT
IPC: H01L41/09 , H01L41/083 , H01L41/18 , H01L41/22 , H03B5/32 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02 , H03H9/17
Abstract: A method of fabricating a resonator (40) is disclosed. The method initially comprises the step of providing a substrate base (50,65) having a dielectric layer(s) (70-105). Thereafter, an adhesive layer (115) is formed on the dielectric layer(s), and a nucleation promoting film (120) is formed over the adhesive layer. A zinc oxide layer (125) is subsequently formed over the nucleation promoting film, and a top conductive layer (130) is formed over the layer of zinc oxide.
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公开(公告)号:AU1830501A
公开(公告)日:2001-08-16
申请号:AU1830501
申请日:2001-02-05
Applicant: LUCENT TECHNOLOGIES INC
Inventor: KOWACH GLEN ROBERT
IPC: H01L41/09 , H01L41/083 , H01L41/18 , H01L41/22 , H03B5/32 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02 , H03H9/17 , C23C14/06 , C23C14/08 , C23C14/18 , C23C14/14 , C23C14/34
Abstract: A method of fabricating a resonator (40) is disclosed. The method initially comprises the step of providing a substrate base (50,65) having a dielectric layer(s) (70-105). Thereafter, an adhesive layer (115) is formed on the dielectric layer(s), and a nucleation promoting film (120) is formed over the adhesive layer. A zinc oxide layer (125) is subsequently formed over the nucleation promoting film, and a top conductive layer (130) is formed over the layer of zinc oxide.
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公开(公告)号:CA2330200A1
公开(公告)日:2001-08-10
申请号:CA2330200
申请日:2001-01-03
Applicant: LUCENT TECHNOLOGIES INC
Inventor: KOWACH GLEN ROBERT
IPC: H01L41/09 , H01L41/083 , H01L41/18 , H01L41/22 , H03B5/32 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02 , H03H9/17 , H04R17/10
Abstract: A method of fabricating a resonator is disclosed. The method initially comprises the step of providing a substrate base having a dielectric layer(s ). Thereafter, an adhesive layer is formed on the dielectric layer(s), and a nucleation promoting film is formed over the adhesive layer. A zinc oxide layer is subsequently formed over the nucleation promoting film, and a top conductive layer is formed over the layer of zinc oxide.
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