公开(公告)号：JP2000101081A

公开(公告)日：2000-04-07

申请号：JP20832699

申请日：1999-07-23

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHEN YOUNG-KAI ,  CHO ALFRED YI ,  HOBSON WILLIAM SCOTT ,  HONG MINGHWEI ,  KUO JENN-MING ,  KWO JUEINAI RAYNIEN ,  MURPHY DONALD W ,  REN FAN

IPC: C23C14/08 ,  H01L21/28 ,  H01L21/283 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/092 ,  H01L29/51 ,  H01L29/737 ,  H01L29/78 ,  H01L33/44 ,  H01S5/028

Abstract: PROBLEM TO BE SOLVED: To enable a gate oxide/semiconductor to be reduced in interface state density and kept low in state density by a method, wherein an oxide dielectric material layer is deposited on the primary surface of a GaAs semiconductor. SOLUTION: Elements are selected to be implanted for the formation of a P-MOSFET 180 and an N-MOSFET 188. An N-type region 183 is formed by implanting Si or S ions by a dielectric layer 182 in a region of a wafer which is demarcated by the use of a photoresist. After the photoresist is removed, a new mask used for implantation to a channel contact is prepared, and an N+-channel contact is formed. A P+ source 195 and a P+ drain 186 are formed, and a source 187 and a drain region 189 are formed. With this setup, a gate oxide/GaAs semiconductor is lowered in the interface state density and can be kept low in state density through a subsequent process.

公开(公告)号：DE69902133D1

公开(公告)日：2002-08-22

申请号：DE69902133

申请日：1999-09-07

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HONG MINGHWEI ,  KUO JENN-MING ,  KWO JUEINAI RAYNIEN ,  MANNAERTS JOSEPH PETRUS ,  WANG YU-CHI

IPC: H01L21/26 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/76 ,  H01L29/78

公开(公告)号：DE69902133T2

公开(公告)日：2003-02-13

申请号：DE69902133

申请日：1999-09-07

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HONG MINGHWEI ,  KUO JENN-MING ,  KWO JUEINAI RAYNIEN ,  MANNAERTS JOSEPH PETRUS ,  WANG YU-CHI

IPC: H01L21/26 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/76 ,  H01L29/78