BONDING OF ALUMINUM OXIDE COMPONENT TO SILICON SUBSTRATE

    公开(公告)号:JPH11109183A

    公开(公告)日:1999-04-23

    申请号:JP20614198

    申请日:1998-07-22

    Abstract: PROBLEM TO BE SOLVED: To enable the bonding excellent in reliability of a component to a substrate by forming a layer containing a metal such as titanium on a substrate including cavities, forming a layer containing aluminum on the titanium layer, and bonding an oxide component to the aluminum layer to improve the adhesion to aluminum. SOLUTION: A first layer 36 containing aluminum is formed on a part of a substrate including cavities. An oxide component 16 is bonded to the aluminum layer 36. A second layer 35 containing one material selected from a group comprising titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten, is formed on a part of the substrate 11 including cavities, and the aluminum layer 36 is formed on a second layer 35.

    ANTICORROSION METHOD IN FABRICATION OF OPTOELECTRONIC ASSEMBLY

    公开(公告)号:JPH11177186A

    公开(公告)日:1999-07-02

    申请号:JP24241398

    申请日:1998-08-28

    Abstract: PROBLEM TO BE SOLVED: To protect aluminum against corrosion by depositing aluminum on a substrate through a photoresist mask, forming a protective layer thereon, stripping the photoresist from the surface of the substrate and then removing the protective layer from the aluminum layer. SOLUTION: Titanium 33, platinum 34 and gold 35 are deposited sequentially on the entire surface of a semiconductor substrate 11, a photoresist mask layer is formed thereon and exposed and developed partially and then the exposed parts are removed by etching from respective layers 33, 34 and 35. Aluminum 39 is then deposited through the photoresist mask layer at a part on the surlace separated from respective layers 33, 34 and 35 and a protective layer 40 containing titanium is formed thereon. Finally, the photoresist mask layer is stripped from the substrate 11 and the protective layer 40 is removed from the aluminum layer 39.

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