INTEGRATED CIRCUIT DEVICE AND METHOD FOR FORMING RESISTANCE ELEMENTS USED IN INTEGRATED CIRCUIT

    公开(公告)号:JP2000012787A

    公开(公告)日:2000-01-14

    申请号:JP16358099

    申请日:1999-06-10

    Abstract: PROBLEM TO BE SOLVED: To manufacture resistance elements so as to enable reproduction, by forming the resistance elements, using nonlinear silicon having specified resistivity. SOLUTION: After a stepped layer 110 is formed on a silicon substrate 100, a patterned first conducting layer 116 is formed on a stepped surface layer of the stepped layer 110. An insulating layer 120 as a second layer is formed on the first stepped layer 110, which has been subjected to step treatment. In this case, the patterned first conducting layer 116 is formed on the stepped layer 110. A via 125 is formed in the insulating layer 120 and is filled with silicon 130 (amorphous or polycrystalline). Thus, each of resistance elements 135, 140, 145 is formed with a different length and identical width. Since the resistivity of the silicon 130 is constant which is at least about 105Ω per cm, the resistance values of the resistance elements 135, 140, 145 become a function of the lengths of the resistance element. Thereby control which is capable of easy reproduction is made possible.

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