公开(公告)号：GB2363903A

公开(公告)日：2002-01-09

申请号：GB0028873

申请日：2000-11-27

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KIZILYALLI ISIK C ,  SINGH RANBIR ,  STIRLING LORI

IPC: H01L27/092 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/105 ,  H01L29/49

Abstract: A method of manufacturing a semiconductor device 100 comprises, forming a first gate electrode 155, a first metal gate electrode material having a work function compatible with a first transistor 115, and forming a second gate electrode 160 of a second metal gate electrode material having a work function compatible with a second transistor 120. The first and second transistors 115, 120 are of opposite types and are formed on a semiconductor substrate. In a semiconductor device 100 the first metal gate electrode material 162b is located over the second metal gate electrode material 162a. The first gate electrode may be formed from a material having a work function of about 4.2 eV and the second gate electrode may be formed from a material having a work fuction of 5.2 eV. The first electrode gate material may be tantalum, tungsten, titanium, or titanium nitride, and the second electrode gate material may be tungsten silicide. The semiconductor device may have at least one n+ doped polysilicon electrode (Figures 7, 8 and 9). There may be a metal etch barrier layer having a high dielectric constant formed from tantalum pentoxide, silicon nitride or aluminium oxide. An integrated circuit includes the semiconductor device and has interconnnects electrically connecting the transistors.