LITHOGRAPHIC METHOD
    1.
    发明专利

    公开(公告)号:JP2000331928A

    公开(公告)日:2000-11-30

    申请号:JP2000111051

    申请日:2000-04-12

    Abstract: PROBLEM TO BE SOLVED: To improve resolutions of all transcribed features in a lithographic method, and realize these improvements simply, at a low cost, by making smaller than at least one of the wavelengths of radiation lights the dimension of a desired pattern, when developing the desired pattern from first and second patterns. SOLUTION: By developing a pattern, a patterned resist layer 36 is obtained. The obtained structure has a hard mask 30 patterned by a first pattern and the resist layer 36 patterned by a second pattern which are formed on a substrate 35. These two patterned layers 30, 36 jointly define a feature 45. This feature 45 has its dimensions smaller than the wavelength of the exposure light. By using the patterned layers 30, 36, the feature 45 is transcribed on the underlaid substrate 35. Normally used etching means are suitable for this purpose. Thereafter, the patterned layers 30, 36 are removed from the substrate 35 having therein the etched feature 45.

    MANUFACTURE OF DEVICE USING VARIABLE TRANSMISSION APERTURE

    公开(公告)号:JPH11317356A

    公开(公告)日:1999-11-16

    申请号:JP4084199

    申请日:1999-02-19

    Abstract: PROBLEM TO BE SOLVED: To optimize the depth of focus of an exposure, by selecting the size of a plurality of apertures of a filter element and their transmittance which is variable within a prescribed range, based on a comparison made between an intensity profile of radioactive rays based on a mask pattern and an intensity profile of radioactive rays that have transmitted through the filter element. SOLUTION: A plurality of apertures of a filter element 20 each have such a transmittance as to change from about zero to about 100 percent with respect to radioactive rays. By combining intensity profiles with respect to the radioactive rays which have transmitted through each part of the element 20, an intensity profile of the element 20 is modelled, and the modelled intensity profile is compared with a desired intensity profile based on a pattern of a mask 30. When both do no coincide, any of the transmittance, location and shape of one or more apertures of the element 20 is altered. The above process is repeated until the intensity profile modelled from the element 20 coincides with the desired intensity profile.

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