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    MANUFACTURE OF DEVICE USING VARIABLE TRANSMISSION APERTURE
    2.
    发明专利
    MANUFACTURE OF DEVICE USING VARIABLE TRANSMISSION APERTURE 失效

    公开(公告)号：JPH11317356A

    公开(公告)日：1999-11-16

    申请号：JP4084199

    申请日：1999-02-19

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CIRELLI RAYMOND ANDREW ,  MKRTCHYAN MASIS ,  TRIMBLE LEE EDWARD ,  WATSON GEORGE P ,  WINDT DAVID LEE

    IPC: H01L21/027 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To optimize the depth of focus of an exposure, by selecting the size of a plurality of apertures of a filter element and their transmittance which is variable within a prescribed range, based on a comparison made between an intensity profile of radioactive rays based on a mask pattern and an intensity profile of radioactive rays that have transmitted through the filter element. SOLUTION: A plurality of apertures of a filter element 20 each have such a transmittance as to change from about zero to about 100 percent with respect to radioactive rays. By combining intensity profiles with respect to the radioactive rays which have transmitted through each part of the element 20, an intensity profile of the element 20 is modelled, and the modelled intensity profile is compared with a desired intensity profile based on a pattern of a mask 30. When both do no coincide, any of the transmittance, location and shape of one or more apertures of the element 20 is altered. The above process is repeated until the intensity profile modelled from the element 20 coincides with the desired intensity profile.

    Method of forming an alignment feature in or on a multi-layered semiconductor structure
    4.
    发明专利
    Method of forming an alignment feature in or on a multi-layered semiconductor structure 未知

    公开(公告)号：GB2372150A

    公开(公告)日：2002-08-14

    申请号：GB0211288

    申请日：2000-11-27

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： BOULIN DAVID M ,  FARROW REGINALD C ,  KIZILYALLI ISIK C ,  MKRTCHYAN MASIS ,  LAYADI NACE

    IPC: H01J37/304 ,  H01L23/544

    Abstract: A method of forming a multi-layered semiconductor structure having substrate (20) comprises the steps of forming an alignment feature (60) in or on substrate (20), and aligning lithography mask (140) using alignment feature (60) with a Scattering with Angular Limitation in Projection Electron-beam Lithography (SCALPEL) tool (100) having an electron beam source (110) for directing an electron beam toward semiconductor structure (10). The alignment feature (60) is detected as it backscatters a greater amount of electrons than the surrounding substrate (20). This information may then be used to align lithography mask (140). The alignment feature (60) may include shallow trench (22, Fig. 1) containing silicon dioxide (30) and a high atomic number material (50) selected from tungsten, tantalum, cobalt, titanium, or the silicides and nitrides of these metals. The alignment feature (60) may be formed in a polysilicon layer on a silicon dioxide layer.

    5.
    发明专利
    未知

    公开(公告)号：DE69900003T2

    公开(公告)日：2001-01-11

    申请号：DE69900003

    申请日：1999-02-09

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CIRELLI RAYMOND ANDREW ,  MKRTCHYAN MASIS ,  TRIMBLE LEE EDWARD ,  WATSON GEORGE PATRICK ,  WINDT DAVID LEE

    IPC: H01L21/027 ,  G03F7/20

    Abstract: A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element (100) is provided. The filter element has at least two regions (110,120,130) of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined. If required, an aspect (transmittance, orientation, dimension) of the one or more of the proposed apertures is adjusted to provide a modeled intensity profile that more closely corresponds to the desired lithographic result. Once the aspects of all apertures is determined, the filter element is fabricated and used in the optical lithographic process by placing the filter element in the optical lithography tool.

    7.
    发明专利
    未知

    公开(公告)号：DE69900003D1

    公开(公告)日：2000-06-08

    申请号：DE69900003

    申请日：1999-02-09

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CIRELLI RAYMOND ANDREW ,  MKRTCHYAN MASIS ,  TRIMBLE LEE EDWARD ,  WATSON GEORGE PATRICK ,  WINDT DAVID LEE

    IPC: H01L21/027 ,  G03F7/20

    Abstract: A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element (100) is provided. The filter element has at least two regions (110,120,130) of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined. If required, an aspect (transmittance, orientation, dimension) of the one or more of the proposed apertures is adjusted to provide a modeled intensity profile that more closely corresponds to the desired lithographic result. Once the aspects of all apertures is determined, the filter element is fabricated and used in the optical lithographic process by placing the filter element in the optical lithography tool.

    Method of forming an alignment feature in or on a mult-layered semiconductor structure
    9.
    发明专利
    Method of forming an alignment feature in or on a mult-layered semiconductor structure 未知

    公开(公告)号：GB2363677A

    公开(公告)日：2002-01-02

    申请号：GB0028872

    申请日：2000-11-27

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： BOULIN DAVID M ,  FARROW REGINALD C ,  KILILYALLI ISIK C ,  MKRTCHYAN MASIS ,  LAYADI NACE

    IPC: G03F7/20 ,  G03F9/00 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  H01L23/544

    Abstract: A method of forming a multi-layered semiconductor structure having substrate (20) comprises the steps of forming an alignment feature (60) in or on substrate (20), and aligning lithography mask (140) using alignment feature (60) with a Scattering with Angular Limitation in Projection Electron-beam Lithography (SCALPEL) tool (100) having an electron beam source (110) for directing an electron beam toward semiconductor structure (10). The alignment feature (60) is detected as it backscatters a greater amount of electrons than the surrounding substrate (20). This information may then be used to align lithography mask (140). The alignment feature (60) may include shallow trench (22, Fig. 1) containing silicon dioxide (30) and a high atomic number material (50) selected from tungsten, tantalum, cobalt, titanium, or the silicides and nitrides of these metals. The alignment feature (60) may be formed in a polysilicon layer on a silicon dioxide layer.

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