公开(公告)号：JPH1055958A

公开(公告)日：1998-02-24

申请号：JP15130697

申请日：1997-06-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WATSON GEORGE PATRICK

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To compensate the proximity effect due to short- and long-distance scatterings by setting the clearing dose of protrudent edges of pattern features as a function of the dose height and separately adjusting the incident exposure doses at the edges in terms of the pattern density. SOLUTION: A short-distance scattering correction const. k is the expression of an intersection point of the clearing dose line and a dose height representing the edges of pattern features and ranges such that 0

公开(公告)号：DE69900003D1

公开(公告)日：2000-06-08

申请号：DE69900003

申请日：1999-02-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CIRELLI RAYMOND ANDREW ,  MKRTCHYAN MASIS ,  TRIMBLE LEE EDWARD ,  WATSON GEORGE PATRICK ,  WINDT DAVID LEE

IPC: H01L21/027 ,  G03F7/20

Abstract: A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element (100) is provided. The filter element has at least two regions (110,120,130) of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined. If required, an aspect (transmittance, orientation, dimension) of the one or more of the proposed apertures is adjusted to provide a modeled intensity profile that more closely corresponds to the desired lithographic result. Once the aspects of all apertures is determined, the filter element is fabricated and used in the optical lithographic process by placing the filter element in the optical lithography tool.

公开(公告)号：DE69900003T2

公开(公告)日：2001-01-11

申请号：DE69900003

申请日：1999-02-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CIRELLI RAYMOND ANDREW ,  MKRTCHYAN MASIS ,  TRIMBLE LEE EDWARD ,  WATSON GEORGE PATRICK ,  WINDT DAVID LEE

IPC: H01L21/027 ,  G03F7/20

Abstract: A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element (100) is provided. The filter element has at least two regions (110,120,130) of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined. If required, an aspect (transmittance, orientation, dimension) of the one or more of the proposed apertures is adjusted to provide a modeled intensity profile that more closely corresponds to the desired lithographic result. Once the aspects of all apertures is determined, the filter element is fabricated and used in the optical lithographic process by placing the filter element in the optical lithography tool.

公开(公告)号：SG50842A1

公开(公告)日：1998-07-20

申请号：SG1997001933

申请日：1997-06-05

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WATSON GEORGE PATRICK

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03C5/00

Abstract: A method of compensating for proximity effects in electron beam lithography systems is disclosed. An uncorrected dose profile is obtained for the pattern features to be introduced into a layer of electron beam sensitive material, including a determination of the clearing dose for the electron beam sensitive resist and the dose height for each edge of the pattern feature. Thereafter the incident dose of exposure energy for introducing an image of the pattern into a layer of electron beam sensitive material is adjusted by designating the clearing dose for each edge of the pattern feature as a function of the dose height. The uncorrected dose profile for determining the dose height and the clearing dose is optionally obtained from a calibration step. Each feature is optionally partitioned into a plurality of subshapes and the incident dose of exposure energy is then adjusted for each edge of each subshape by designating the clearing dose for each edge of each subshape as a function of the dose height.