ISOLATING METHOD AND ACOUSTIC RESONANCE DEVICE

    公开(公告)号:JP2001223410A

    公开(公告)日:2001-08-17

    申请号:JP2001026212

    申请日:2001-02-02

    Abstract: PROBLEM TO BE SOLVED: To isolate a bulk acoustic device like an acoustic resonator from adverse influence which is exerted on efficiency and performance of the device by a wave generated in the lateral direction of the device. SOLUTION: A method which isolates a piezoelectric thin film acoustic resonance device is provided in order to prevent a wave which is generated with the device and propagates in the lateral direction from leaving the device and/or interfering with an adjacent device or a system. Especially, this isolation technique includes operation or isolation of a piezoelectric material layer between the devices, in order to restrain the quantity of acoustic energy which leaves the device and propagates in the lateral direction. In one embodiment, at least a part of piezoelectric material which is not relative to signal transmission due to conversion between RF energy and acoustic energy is eliminated from the device. In other embodiment, growth of the piezoelectric material is restricted within a specified region during manufacturing the device. Further in other embodiment, in order to form a region having superior piezoelectric characteristic and a region where piezoelectric characteristic is low, crystal orientation of the piezoelectric material is interrupted or changed during manufacturing the device.

    THIN FILM RESONATOR FILTER AND METHOD FOR CONSTRUCTING THE SAME

    公开(公告)号:JP2001251102A

    公开(公告)日:2001-09-14

    申请号:JP2001026681

    申请日:2001-02-02

    Abstract: PROBLEM TO BE SOLVED: To provide a TFR filter circuit in which more excellent evenness of of the pass band can be accomplished while expanding the bandwidth. SOLUTION: Between an input and an output of the circuit, the filter has a plurality of thin film resonator elements(TFR) constituting a plurality of serial branches and shunt branches, the plurality of TFR elements have a set of resonance frequencies and electrode capacitance, a set of electrode capacitance of at least one TFR element among the serial branches ad the shunt branches is different from the electrode capacitance of the TFR elements of the other corresponding serial branches and shunt branches, and a set of resonance frequencies of at least one TFR element among the serial branches and shunt branches is different from the electrode capacitance of the TFR elements of the other corresponding serial branches and shunt branches.

    THIN-FILM RESONATOR FILTER AND METHOD FOR EXTENDING ITS BAND WIDTH

    公开(公告)号:JP2001244704A

    公开(公告)日:2001-09-07

    申请号:JP2001026680

    申请日:2001-02-02

    Abstract: PROBLEM TO BE SOLVED: To provide a thin-film resonance(TFR) filter whose full bandwidth can be enhanced by increasing the resonance pole-zero separation. SOLUTION: The TFR filter and the method for extending its bandwidth employs at least one of TFR components (210, 220, 230) and inductors (240, 245, 250). The TFR typically includes TFR components, that configure series and parallel branches placed alternately. The inductor is placed in series and/or parallel with at least one TFR component. The method of maintains the permissible return loss performance of the filter, so as to enhance the entire bandwidth of the filter and provides a capability of increasing the pole-zero separation of the TFR components placed in a form of the series branch and/or parallel branch.

    METHOD OF ISOLATION FOR ACOUSTIC RESONATOR DEVICES

    公开(公告)号:CA2330019A1

    公开(公告)日:2001-08-04

    申请号:CA2330019

    申请日:2001-01-02

    Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric materi al layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of t he piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poo r piezoelectric characteristics.

    METHOD OF ISOLATION FOR ACOUSTIC RESONATOR DEVICES

    公开(公告)号:CA2330019C

    公开(公告)日:2008-12-30

    申请号:CA2330019

    申请日:2001-01-02

    Abstract: A method of isolating piezoelectric thin film acoustic resonator devices t o prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric materi al layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of t he piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poo r piezoelectric characteristics.

    Method of isolation for acoustic resonator devices

    公开(公告)号:AU1673901A

    公开(公告)日:2001-08-09

    申请号:AU1673901

    申请日:2001-01-31

    Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.

    8.
    发明专利
    未知

    公开(公告)号:BR0100192A

    公开(公告)日:2001-10-09

    申请号:BR0100192

    申请日:2001-01-29

    Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.

    METHOD OF ISOLATION FOR ACOUSTIC RESONATOR DEVICES

    公开(公告)号:CA2642731A1

    公开(公告)日:2001-08-04

    申请号:CA2642731

    申请日:2001-01-02

    Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.

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