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    Process for fabricating a lithographic mask
    5.
    发明公开
    Process for fabricating a lithographic mask 审中-公开
    一种用于制造光刻掩模工艺

    公开(公告)号：EP0953876A3

    公开(公告)日：2001-03-28

    申请号：EP99303035.2

    申请日：1999-04-20

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Kornblit, Avinoam ,  Novembre, Anthony Edward ,  Liddle, James Alexander

    IPC: G03F1/14

    CPC classification number: G03F1/22 ,  G03F1/20

    Abstract: The invention provides an improved process for fabricating masks suitable for use in SCALPEL and similar electron-based or ion-based lithographic processes. Specifically, the process allows use of commercially-available (100) oriented silicon substrates, and better control over the profiles of mask struts. Specifically, the struts of the mask are formed by plasma etching, using a fluorine-based gas, and a unique multilayer mask blank is fabricated to promote successful use of the plasma etch. According to an embodiment of the process, an etch stop layer is deposited onto the front surface of a silicon substrate, and a membrane layer is deposited over the etch stop layer. A scattering layer, typically tungsten, is deposited over the membrane layer. A patterning layer is deposited on the back surface of the substrate, and the desired grillage pattern for the struts is patterned into the patterning layer. The grillage structure is then etched into the silicon, to form the struts, by plasma etching with the fluorine-based gas. The etch stop layer acts to prevent the etch from damaging the membrane layer.

    Process for fabricating a lithographic mask
    9.
    发明公开
    Process for fabricating a lithographic mask 审中-公开
    Verfahren zur Herstellung einer lithographischen Maske

    公开(公告)号：EP0953876A2

    公开(公告)日：1999-11-03

    申请号：EP99303035.2

    申请日：1999-04-20

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Kornblit, Avinoam ,  Novembre, Anthony Edward ,  Liddle, James Alexander

    IPC: G03F1/14

    CPC classification number: G03F1/22 ,  G03F1/20

    Abstract: The invention provides an improved process for fabricating masks suitable for use in SCALPEL and similar electron-based or ion-based lithographic processes. Specifically, the process allows use of commercially-available (100) oriented silicon substrates, and better control over the profiles of mask struts. Specifically, the struts of the mask are formed by plasma etching, using a fluorine-based gas, and a unique multilayer mask blank is fabricated to promote successful use of the plasma etch. According to an embodiment of the process, an etch stop layer is deposited onto the front surface of a silicon substrate, and a membrane layer is deposited over the etch stop layer. A scattering layer, typically tungsten, is deposited over the membrane layer. A patterning layer is deposited on the back surface of the substrate, and the desired grillage pattern for the struts is patterned into the patterning layer. The grillage structure is then etched into the silicon, to form the struts, by plasma etching with the fluorine-based gas. The etch stop layer acts to prevent the etch from damaging the membrane layer.

    Abstract translation: 本发明提供了一种用于制造适合用于SCALPEL和类似的基于电子或基于离子的光刻工艺的掩模的改进方法。 具体来说，该方法允许使用市售的（100）定向硅衬底，并且更好地控制掩模支柱的轮廓。 具体地，通过使用氟基气体的等离子体蚀刻形成掩模的支柱，并且制造独特的多层掩模坯料以促进等离子体蚀刻的成功应用。 根据该方法的一个实施方案，将蚀刻停止层沉积在硅衬底的前表面上，并且在该蚀刻停止层上沉积膜层。 散布层（通常为钨）沉积在膜层上。 图案层沉积在基板的背面，并且用于支柱的所需格栅图案被图案化成图案化层。 然后通过用氟基气体的等离子体蚀刻将格架结构蚀刻到硅中以形成支柱。 蚀刻停止层用于防止蚀刻损坏膜层。

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