公开(公告)号：WO2013162927A9

公开(公告)日：2013-10-31

申请号：PCT/US2013/036477

申请日：2013-04-12

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： HU, Hsin-Hua ,  BIBL, Andreas

IPC: H01L33/36

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.

公开(公告)号：WO2013074370A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/064215

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： HU, Hsin-Hua ,  BIBL, Andreas ,  HIGGINSON, John, A. ,  LAW, Hung-Fai, Stephen

IPC: H01L33/46 ,  H01L33/48 ,  H01L33/36

CPC classification number: H01L33/20 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/405 ,  H01L2224/7598 ,  H01L2224/83191 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。

公开(公告)号：WO2014093065A1

公开(公告)日：2014-06-19

申请号：PCT/US2013/072916

申请日：2013-12-03

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： SAKARIYA, Kapil V. ,  BIBL, Andreas ,  HU, Hsin-Hua

IPC: G09F9/30

CPC classification number: H01L27/156 ,  G09G3/32 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/124 ,  H01L33/20 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. A ground line is located in the non-pixel area and an array of ground tie lines run between the bank openings in the pixel area and are electrically connected to the ground line in the non-pixel area.

Abstract translation: 描述显示面板和形成显示面板的方法。 显示面板可以包括包括像素区域和非像素区域的薄膜晶体管衬底。 像素区域包括阵列开口的阵列和阵列阵列内的底部电极阵列。 接地线位于非像素区域中，并且接地线的阵列在像素区域中的堤开口之间延伸并且电连接到非像素区域中的接地线。

公开(公告)号：WO2014093063A1

公开(公告)日：2014-06-19

申请号：PCT/US2013/072913

申请日：2013-12-03

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： SAKARIYA, Kapil, V. ,  BIBL, Andreas ,  HU, Hsin-Hua

IPC: H01L33/60 ,  H01L33/48

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/06 ,  H01L33/36 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/95 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract translation: 描述了发光器件的反射堤结构。 反射堤结构可以包括衬底，衬底上的绝缘层，以及绝缘层中的堤开口阵列，每个堤开口包括底表面和侧壁。 反射层跨越绝缘层中每个堤开口的侧壁。

公开(公告)号：WO2013074372A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/064220

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： HU, Hsin-Hua ,  BIBL, Andreas ,  HIGGINSON, John, A. ,  LAW, Hung-Fai, Stephen

IPC: H01L33/36 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/20 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/405 ,  H01L2224/7598 ,  H01L2224/83191 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。

公开(公告)号：WO2014046981A1

公开(公告)日：2014-03-27

申请号：PCT/US2013/059807

申请日：2013-09-13

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： HU, Hsin-Hua ,  BIBL, Andreas ,  HIGGINSON, John A.

IPC: B81B7/00 ,  B81B7/04 ,  B81C1/00 ,  H01L21/67

CPC classification number: H01L24/06 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/7598 ,  H01L2224/83409 ,  H01L2224/83411 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2924/10156 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract translation: 公开了一种稳定微器件阵列的方法和结构。 微器件阵列形成在由热固性材料形成的稳定柱阵列上。 每个微型装置包括比直接在底面下面的相应稳定柱更宽的底表面。

公开(公告)号：WO2013119671A1

公开(公告)日：2013-08-15

申请号：PCT/US2013/024939

申请日：2013-02-06

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  HU, Hsin-Hua ,  LAW, Hung-Fai Stephen

IPC: H01L21/677 ,  H01L21/60 ,  H01L21/762

CPC classification number: H01L24/83 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/95 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29183 ,  H01L2224/75261 ,  H01L2224/75281 ,  H01L2224/75282 ,  H01L2224/75283 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2224/95001 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01031 ,  H01L2924/01051 ,  H01L2924/01029 ,  H01L2924/01048 ,  H01L2924/01082 ,  H01L2924/0103

Abstract: Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

Abstract translation: 描述了静电转印头阵列组件以及将微器件阵列转移和结合到接收衬底的方法。 在一个实施例中，一种方法包括从载体基板拾取微器件阵列，其中静电转印头组件支持静电转印头阵列，使接收基片与微器件阵列接触，将静电转印头 组件将微器件阵列接合到接收衬底，并将微器件阵列释放到接收衬底上。

公开(公告)号：WO2013074376A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/064234

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  LAW, Hung-Fai Stephen ,  HU, Hsin-Hua

IPC: H01L21/677 ,  H01L33/00 ,  H05K13/04

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

公开(公告)号：WO2013074357A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/063993

申请日：2012-11-07

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John, A. ,  LAW, Hung-Fai, Stephen ,  HU, Hsin-Hua

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

CPC classification number: H01L24/83 ,  B32B37/025 ,  B32B37/06 ,  B32B2457/20 ,  H01L21/67144 ,  H01L21/6833 ,  H01L24/75 ,  H01L24/95 ,  H01L24/97 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  Y10T156/1153 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  H01L2224/83 ,  H01L2924/00

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。

公开(公告)号：EP2780933A1

公开(公告)日：2014-09-24

申请号：EP12850120.2

申请日：2012-11-07

Applicant: Luxvue Technology Corporation

Inventor： BIBL, Andreas ,  HIGGINSON, John, A. ,  LAW, Hung-Fai, Stephen ,  HU, Hsin-Hua

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

CPC classification number: H01L24/83 ,  B32B37/025 ,  B32B37/06 ,  B32B2457/20 ,  H01L21/67144 ,  H01L21/6833 ,  H01L24/75 ,  H01L24/95 ,  H01L24/97 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  Y10T156/1153 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  H01L2224/83 ,  H01L2924/00

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.