Apparatus for and method of controlling the base bias voltage of an HBT
    4.
    发明公开
    Apparatus for and method of controlling the base bias voltage of an HBT 有权
    Gerätund Verfahren zur Steuerung der Basisvorspannung eines HBTs

    公开(公告)号:EP1469592A1

    公开(公告)日:2004-10-20

    申请号:EP04252174.0

    申请日:2004-04-14

    Applicant: M/A-COM, INC.

    Abstract: An apparatus and method for amplifying a radiofrequency (RF) signal. The apparatus comprises a control circuit including a first transistor (108), a second transistor (118), and a ballast resistor (116) coupled between an emitter terminal of the first transistor (108) and a base terminal of the second transistor (118), such that a control voltage applied to a base terminal of the first transistor (108) controls the amplification of a signal applied to the base terminal of the second transistor (118). Additional elements may be coupled to the control circuit to improve the performance thereof, including a feedback stabilization circuit (106), a diode stack circuit (104), a bypass capacitor (110) and an additional resistor (112).

    Abstract translation: 一种用于放大射频(RF)信号的装置和方法。 该装置包括控制电路,该控制电路包括第一晶体管(108),第二晶体管(118)和耦合在第一晶体管(108)的发射极端子和第二晶体管(118)的基极端子之间的镇流电阻器 ),使得施加到第一晶体管(108)的基极端子的控制电压控制施加到第二晶体管(118)的基极端子的信号的放大。 附加元件可以耦合到控制电路以改善其性能,包括反馈稳定电路(106),二极管堆叠电路(104),旁路电容器(110)和附加电阻器(112)。

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