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    Method for fabricating a MESFET and a MESFET
    2.
    发明公开
    Method for fabricating a MESFET and a MESFET 审中-公开
    Herstellungsverfahrenfüreinen MESFET和eES MESFET

    公开(公告)号：EP1806779A2

    公开(公告)日：2007-07-11

    申请号：EP07100057.4

    申请日：2007-01-03

    Applicant: M/A-COM, INC.

    Inventor： Winslow, Thomas Aaron

    IPC: H01L21/338 ,  H01L29/812

    CPC classification number: H01L29/812 ,  H01L29/0646 ,  H01L29/1029 ,  H01L29/1075 ,  H01L29/66848 ,  H01L29/66878

    Abstract: The method includes forming an n-type channel portion (28) in a substrate (20) and forming a p-type channel portion (34) in the substrate (20). A boundary (75) of the n-type channel portion (28) and a boundary (73) of the p-type channel portion (34) define an intrinsic region (72) in the substrate (20).

    Abstract translation: 该方法包括在衬底（20）中形成n型沟道部分（28）并在衬底（20）中形成p型沟道部分（34）。 n型沟道部分（28）的边界（75）和p型沟道部分（34）的边界（73）限定了衬底（20）中的本征区域（72）。

    Dual field plate MESFET
    3.
    发明公开
    Dual field plate MESFET 审中-公开
    MESFET mit zwei Feldplatten

    公开(公告)号：EP1798773A2

    公开(公告)日：2007-06-20

    申请号：EP06126396.8

    申请日：2006-12-18

    Applicant: M/A-COM, INC.

    Inventor： Winslow, Thomas Aaron

    IPC: H01L29/812 ,  H01L29/40

    CPC classification number: H01L29/812 ,  H01L29/404

    Abstract: A dual field plate MESFET (90) and method of forming a MESFET. The MESFET (90) includes a gate electrode (100) and a drain electrode (96), with the gate electrode (100) and drain electrode (96) formed on a substrate (105). The MESFET further includes a gate side field plate (110) at the gate electrode (100) and a drain side field plate (112) in proximity to the drain electrode (96) and extending over a burnout improvement region in the substrate (105).

    Abstract translation: 双场板MESFET（90）和形成MESFET的方法。 MESFET（90）包括栅电极（100）和漏电极（96），栅电极（100）和漏电极（96）形成在基片（105）上。 MESFET还包括位于栅电极（100）处的栅极侧栅极（110）和靠近漏电极（96）的漏极侧场板（112）并延伸到衬底（105）中的烧尽改进区域上， 。

    Apparatus for and method of controlling the base bias voltage of an HBT
    6.
    发明公开
    Apparatus for and method of controlling the base bias voltage of an HBT 有权
    Gerätund Verfahren zur Steuerung der Basisvorspannung eines HBTs

    公开(公告)号：EP1469592A1

    公开(公告)日：2004-10-20

    申请号：EP04252174.0

    申请日：2004-04-14

    Applicant: M/A-COM, INC.

    Inventor： Winslow, Thomas Aaron ,  Weigand, Christopher Dirk ,  Giacchino, Richard John

    IPC: H03F1/30 ,  H03F1/32

    CPC classification number: H03F3/3432 ,  H03F1/30 ,  H03F1/34 ,  H03F3/195 ,  H03F3/211 ,  H03F3/3435 ,  H03F3/50 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/153 ,  H03F2200/18 ,  H03F2200/451 ,  H04B1/006 ,  H04B1/0458 ,  H04B1/12 ,  H04B1/48

    Abstract: An apparatus and method for amplifying a radiofrequency (RF) signal. The apparatus comprises a control circuit including a first transistor (108), a second transistor (118), and a ballast resistor (116) coupled between an emitter terminal of the first transistor (108) and a base terminal of the second transistor (118), such that a control voltage applied to a base terminal of the first transistor (108) controls the amplification of a signal applied to the base terminal of the second transistor (118). Additional elements may be coupled to the control circuit to improve the performance thereof, including a feedback stabilization circuit (106), a diode stack circuit (104), a bypass capacitor (110) and an additional resistor (112).

    Abstract translation: 一种用于放大射频（RF）信号的装置和方法。 该装置包括控制电路，该控制电路包括第一晶体管（108），第二晶体管（118）和耦合在第一晶体管（108）的发射极端子和第二晶体管（118）的基极端子之间的镇流电阻器 ），使得施加到第一晶体管（108）的基极端子的控制电压控制施加到第二晶体管（118）的基极端子的信号的放大。 附加元件可以耦合到控制电路以改善其性能，包括反馈稳定电路（106），二极管堆叠电路（104），旁路电容器（110）和附加电阻器（112）。

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