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    Method of enhancing epitaxy and preferred orientation in films deposited on solid substrates
    3.
    发明公开
    Method of enhancing epitaxy and preferred orientation in films deposited on solid substrates 失效
    用于改善涂以薄层固体基底上的外延和bevorzügten取向。

    公开(公告)号：EP0020134A1

    公开(公告)日：1980-12-10

    申请号：EP80301761.5

    申请日：1980-05-28

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

    Inventor： Geis, Michael, W. ,  Flanders, Dale C. ,  Smith, Henry I.

    IPC: C30B1/08 ,  C30B25/18 ,  C23C13/04

    CPC classification number: C30B25/18 ,  C30B1/00 ,  C30B1/08 ,  C30B29/06

    Abstract: The invention relates to a method of enhancing epitaxy and preferred orientation in films on solid substrates, which includes forming at predetermined locations, a plurality of artificial point defects or a surface relief structure (7) at the surface of a solid substrate (1). Thereafter a film (8) is deposited on the surface to form a substantially epitaxial or preferred orientation layer in tre film having crystalographic orientation influenced by the geometry of an artificial defect. The orienting influence of the article defects may be enhanged by applying an incident beam of energy (9) to the film (8).

    Abstract translation: 本发明涉及一种固体基质，其包括在预定的位置上形成增强膜外延的和优选的取向的方法，人工点缺陷的多个或一表面浮雕结构（7）在固体基材的表面（1）。 有后的膜（8）被沉积在表面上，以形成具有由人工缺陷的几何形状的影响crystalographic取向TRE电影基本上外延或优选的取向层。 制品缺陷的取向影响可以通过施加到入射能量（9）的光束的薄膜（8）被enhanged。

    Three-dimensional integration by graphoepitaxy
    6.
    发明公开
    Three-dimensional integration by graphoepitaxy 失效
    Dreidimensionale集成durch graphische Epitaxie。

    公开(公告)号：EP0020135A1

    公开(公告)日：1980-12-10

    申请号：EP80301762.3

    申请日：1980-05-28

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

    Inventor： Smith, Henri I. ,  Flanders, Dale C. ,  Geis, Michael W.

    IPC: H01L21/20 ,  H01L29/04 ,  H01L27/06

    CPC classification number: H01L29/045 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/8221 ,  H01L27/0688

    Abstract: The invention relates to a method of making multi-level semi conductor devices which include a first level of devices (12) in the surface of a wafer (11) of semi conductor material and a first film (13) of material deposited on the wafer surface. To produce a further level of devices one or more artificial defects (14) are fabricated in the surface of the first film (13) and a second film (15) of semi conductor material is deposited on the artificial defects so that the crystallographic orientation is influenced by the geometric arrangement of the defect or defects. A second level of semi conductor devices (16) can then be fabricated above the first level in the second film (15).

    Abstract translation: 本发明涉及一种制造多层半导体器件的方法，该器件包括在半导体材料的晶片（11）的表面中的第一级器件（12）和沉积在晶片上的第一材料膜（13） 表面。 为了产生进一步的装置，在第一膜（13）的表面上制造一个或多个人造缺陷（14），并且半导体材料的第二膜（15）沉积在人造缺陷上，使得晶体取向为 受缺陷或缺陷几何排列的影响。 然后可以在第二膜（15）中的第一层上方制造第二级半导体器件（16）。

    A method of producing X-ray diffracting gratings
    7.
    发明公开
    A method of producing X-ray diffracting gratings 失效
    Verfahren zur Herstellung vonRöntgenbeugungsgittern。

    公开(公告)号：EP0020133A1

    公开(公告)日：1980-12-10

    申请号：EP80301760.7

    申请日：1980-05-28

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

    Inventor： Flanders, Dale C.

    IPC: G02B5/18 ,  G03F7/00

    CPC classification number: G03F1/22

    Abstract: The invention relates to a method of producing X-ray masks by forming a relief pattern of predetermined section in silicon or silicon dioxide and then moulding a plastics material with an inverse relief pattern. Thereafter, an X-ray absorbing material such as tungsten is deposited at an oblique angle onto the relief structure in the plastics material.

    Abstract translation: 本发明涉及一种通过在硅或二氧化硅中形成预定部分的浮雕图案然后以反浮雕图案模制塑料材料来生产X射线掩模的方法。 此后，将诸如钨的X射线吸收材料以倾斜角度沉积到塑料材料中的浮雕结构上。

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