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1.发明公开Method of enhancing epitaxy and preferred orientation in films deposited on solid substrates 失效用于改善涂以薄层固体基底上的外延和bevorzügten取向。
公开(公告)号：EP0020134A1
公开(公告)日：1980-12-10
申请号：EP80301761.5
申请日：1980-05-28
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor： Geis, Michael, W. , Flanders, Dale C. , Smith, Henry I.
Abstract: The invention relates to a method of enhancing epitaxy and preferred orientation in films on solid substrates, which includes forming at predetermined locations, a plurality of artificial point defects or a surface relief structure (7) at the surface of a solid substrate (1). Thereafter a film (8) is deposited on the surface to form a substantially epitaxial or preferred orientation layer in tre film having crystalographic orientation influenced by the geometry of an artificial defect. The orienting influence of the article defects may be enhanged by applying an incident beam of energy (9) to the film (8).
Abstract translation: 本发明涉及一种固体基质，其包括在预定的位置上形成增强膜外延的和优选的取向的方法，人工点缺陷的多个或一表面浮雕结构（7）在固体基材的表面（1）。 有后的膜（8）被沉积在表面上，以形成具有由人工缺陷的几何形状的影响crystalographic取向TRE电影基本上外延或优选的取向层。 制品缺陷的取向影响可以通过施加到入射能量（9）的光束的薄膜（8）被enhanged。
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公开(公告)号：EP0020132A3
公开(公告)日：1981-08-19
申请号：EP80301759
申请日：1980-05-28
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor： Flanders, Dale C. , Smith, Henry I.
IPC: G02B05/18
CPC classification number: G03F7/70325 , G02B5/1857 , G03F7/2039
Abstract: Soft carbon-K X-rays (38) are used to expose a PMMA photoresist (31) on an oxide layer (32) of a silicon substrate (33) through a parent mask (30) separated a distance S from the resist by a spacer (34). The parent mask slits (12, 17) define a pattern of spatial period p, to establish an intensity pattern of period p/n at the resist with S = p 2 /nλ, where λ is the wavelength of the incident radiation and λ
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公开(公告)号：EP0020132B1
公开(公告)日：1984-09-26
申请号：EP80301759.9
申请日：1980-05-28
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor： Flanders, Dale C. , Smith, Henry I.
IPC: G02B5/18
CPC classification number: G03F7/70325 , G02B5/1857 , G03F7/2039
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公开(公告)号：EP0020132A2
公开(公告)日：1980-12-10
申请号：EP80301759.9
申请日：1980-05-28
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor： Flanders, Dale C. , Smith, Henry I.
IPC: G02B5/18
CPC classification number: G03F7/70325 , G02B5/1857 , G03F7/2039
Abstract: Soft carbon-K X-rays (38) are used to expose a PMMA photoresist (31) on an oxide layer (32) of a silicon substrate (33) through a parent mask (30) separated a distance S from the resist by a spacer (34). The parent mask slits (12, 17) define a pattern of spatial period p, to establish an intensity pattern of period p/n at the resist with S = p 2 /nλ, where λ is the wavelength of the incident radiation and λ
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