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    Solid state microwave oscillating device
    1.
    发明授权
    Solid state microwave oscillating device 失效
    固态微波振荡器件

    公开(公告)号：US3701050A

    公开(公告)日：1972-10-24

    申请号：US3701050D

    申请日：1971-04-21

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： MIZUNO HIROYUKI ,  NAKASHIMA SHINICHI ,  MIYAI YUKIO

    IPC: H01L29/00 ,  H03B9/12 ,  H03B7/06

    CPC classification number: H03B9/12 ,  H01L29/00

    Abstract: The present invention provides a device for producing microwave oscillations which generally comprises a solid state oscillating element and a cavity resonator, said element comprising a semiconductor substrate with a metal layer thereon and a rectifying junction formed therebetween. An electric potential is impressed on the depletion layer of the rectifying junction in the backward direction, thus producing microwave oscillations.

    Abstract translation: 本发明提供了一种用于产生微波振荡的装置，其通常包括固态振荡元件和空腔谐振器，所述元件包括其上具有金属层的半导体衬底和形成在其间的整流结。 整流结的消耗层向后方施加电位，产生微波振荡。

    3.
    发明专利
    未知

    公开(公告)号：DE1957390A1

    公开(公告)日：1970-06-04

    申请号：DE1957390

    申请日：1969-11-14

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TERAMOTO IWAO ,  NAKASHIMA SHINICHI ,  IWASA HITOO ,  MIYAI JUKIO

    IPC: H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L29/06 ,  H01L1/12

    Abstract: A semiconductor structure and a method of manufacturing same wherein at least three mesa semiconductor units are formed in a regularly spaced relationship on a single substrate and a heat dissipator is attached to the mesa surface of each of the units, thereby stabilizing and ensuring the mounting of the heat dissipator as well as attaining a considerably improved heat dissipation property. The structure is useful for a large heat loss semiconductor such as a microwave generating avalanche diode.

    6.
    发明专利
    未知

    公开(公告)号：DE1963757A1

    公开(公告)日：1970-07-16

    申请号：DE1963757

    申请日：1969-12-19

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NAKASHIMA SHINICHI ,  INOUE MORIO ,  IWASA HITOO

    IPC: H01L21/00 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/316 ,  H01L27/00 ,  H01L29/00 ,  H01L7/00

    Abstract: 1,246,739. Etching. MATSUSHITA ELECTRONICS CORP. 22 Dec., 1969 [27 Dec., 1968; 30 Dec., 1968], No. 62303/69. Heading B6J. [Also in Division H1] In a method of etching a germanium body to form mesas on its surface a silicon dioxide masking film 3 is employed. An area of silicon dioxide film 3 is formed by thermal decomposition of organo-oxysilane and photolithography over those areas of the surface of the germanium body 1 which are destined to become mesas, after which the body is etched chemically or electrolytically to produce the mesas. In the chemical etching process hydrogen peroxide solution of 10-30% concentration by weight at a temperature of between 50‹ and 95‹ C. is employed. The depth of etching may be monitored by measurement of the extent of side etching, which proceeds under these conditions at the same rate as vertical etching; the area of silicon dioxide mask initially applied making allowance for this reduction in area by side etching. In the electrolytic etching process the germanium body is fixed to a carbon anode in an etching bath with a platinum cathode in a sodium hydroxide solution of 2-20% concentration by weight and a current of 0À1-1 amp. per cm. 2 is caused to flow, the temperature being below 30‹ C. The thickness of the silicon dioxide masking film in the above methods should be between 1000 Š and 7000 Š.

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