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    Semiconductor device having a t{11 o{11 -s{11 o{11 {0 composite oxide layer
    1.
    发明授权
    Semiconductor device having a t{11 o{11 -s{11 o{11 {0 composite oxide layer 失效
    具有T {11 O {11 -S {11 O {11 {O复合氧化物层）的半导体器件

    公开(公告)号：US3614548A

    公开(公告)日：1971-10-19

    申请号：US3614548D

    申请日：1970-06-11

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： INOUE MORIO

    IPC: H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  H01L3/00

    CPC classification number: H01L23/291 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A surface protective layer or surface insulating layer of a composite oxide which is formed of silicon dioxide (SiO2) to which is added with less than 0.02 percent by weight of titanium dioxide (TiO2) stabilizes and improves the characteristics of the semiconductor device of a single layer formed of silicon oxide. The above-mentioned semiconductor device is provided by mixing small amount of gaseous organic compounds of titanium such as triisopropyl titanate with a gaseous organic compound of silicon such as tetraethoxysilane and leading the resultant gaseous mixture onto a predetermined semiconductor substrate which is heated and held at a temperature of from 300* to 500* C. to react therewith.

    Formation of abrupt junctions in liquid phase epitaxy
    5.
    发明授权
    Formation of abrupt junctions in liquid phase epitaxy 失效
    在液相外延形成突变结

    公开(公告)号：US3909317A

    公开(公告)日：1975-09-30

    申请号：US38365373

    申请日：1973-07-30

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ITOH KUNIO ,  INOUE MORIO

    IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

    CPC classification number: C30B19/063 ,  C30B19/064 ,  C30B19/10 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/107 ,  Y10S438/916

    Abstract: In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

    Abstract translation: 在诸如通过液相外延生长形成的半导体激光器件的多层半导体器件的制造中，提供以下改进，即，通过使半导体衬底接触第一半导体溶液形成第一外延生长层之后，以及 在通过使所述第一层与第二半导体溶液接触来形成第二外延生长层之前，使所述第一层与第三半导体溶液或液态金属接触，由此在形成在第二半导体溶液之间的结处附近的杂质浓度的斜率 第一层和第二层可以令人满意地陡峭，从而获得良好的性能。

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