公开(公告)号：JPH08321449A

公开(公告)日：1996-12-03

申请号：JP12507495

申请日：1995-05-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASHIMA YUKIO ,  OKUMA TORU

IPC: G03F7/16 ,  B01J19/00 ,  B05C5/00 ,  B05C11/08 ,  B05D1/40 ,  H01L21/027

Abstract: PURPOSE: To provide an applicator which can correst a delicate film thickness error and can easily handle a variety of photoresists and a change in film thickness and provides a uniformity of application. CONSTITUTION: Voltage is applied between a first electrode 16 and a second electrode 17, each of which is constituted of a group of electrodes installed concentrically with a rotary shaft center of a motor 12 through vent paths. By application of voltage, air is ionized and ion current flows between the electrodes. Ions which move between the first electrode 16 and the second electrode 17 give kinetic energy to air molecules and thereby an air stream is generated vertically to a primary surface of a resist-coated substrate 10. A speed of the air stream is dependent on a potential difference between the first electrode 16 and the second electrode 17. Therefore, by controlling an in-plane potential distribution of both of the first electrode 16 and the second electrode 17 or either of them, a velocity distribution of air which is sent to the resist-coated substrate 10 can be controlled concentrically with the center of the surface of the substrate.

公开(公告)号：JPH02264961A

公开(公告)日：1990-10-29

申请号：JP8762389

申请日：1989-04-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASHIMA YUKIO ,  OKUDA YOSHIMITSU ,  OKUMA TORU ,  FUKUMOTO HIROBUMI

IPC: G03F7/38 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To cancel the gradient of dissolution speed in the direction of depth at the time of development and to enhance the aspect ratio of a pattern by irradiating a photoresist with ultraviolet rays having specified single wavelength after patternwise exposing photoresist. CONSTITUTION:The photoresist comprising a novolak resin and a quinonediazido type photosensitive agent is formed on a substrate 1 by coating, then, patternwise exposed, and the whole surface of the photoresist is irradiated with the ultraviolet rays of 365 nm wavelength, while the substrate 1 is heat treated in the atmosphere of nitrogen, preferably, at 80 - 130 deg.C, and subjected to development processing, and the resist pattern 2 is thus formed.

公开(公告)号：JPH02264960A

公开(公告)日：1990-10-29

申请号：JP8762289

申请日：1989-04-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASHIMA YUKIO ,  OKUDA YOSHIMITSU ,  OKUMA TORU ,  FUKUMOTO HIROBUMI

IPC: G03F7/38 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To cancel the gradient of dissolution speed in the direction of depth at the time of development and to enhance the aspect ratio of a pattern by irradiating a photoresist with ultraviolet rays specified in the wavelength region after patternwise exposing the photoresist. CONSTITUTION:The photoresist comprising a novolak resin and a quinonediazido type photosensitive agent is formed on a substrate 1 by coating, then, patternwise exposed, and the whole surface of the photoresist is irradiated with the ultraviolet rays including the wavelength region of 330 - 440 nm, while the substrate 1 is heat treated in the atmosphere of nitrogen, preferably, at 80 - 130 deg.C, and subjected to development processing, and the resist pattern 2 is thus formed.

公开(公告)号：JPH0239418A

公开(公告)日：1990-02-08

申请号：JP18950188

申请日：1988-07-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASHIMA YUKIO ,  OKUMA TORU ,  OKUDA YOSHIMITSU ,  FUKUMOTO HIROBUMI

IPC: G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To modify, the quality of a photoresist film to make the film suitable for far ultraviolet rays irradiation method after exposing to rays by performing heat treatment after forming the photoresist film by forming narrow gaps on the photoresist film with a parallel plate. CONSTITUTION:Novolak positive type photoresist 1 is applied on a substrate 2 by rotation application method. Gaps are formed on the photoresist film 1 with a parallel plate 4 and heat treatment is performed on a hot plate 5. A mask pattern 6 is transcribed on the photoresist film 1 cooled to an ordinary temperature with ultraviolet g-ray 7 and exposed thereto. The photoresist 1 exposed to the rays is heated and far ultraviolet rays 8 are applied to the whole principal surface thereof.

公开(公告)号：JPH0232204A

公开(公告)日：1990-02-02

申请号：JP18397188

申请日：1988-07-22

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUDA YOSHIMITSU ,  OKUMA TORU ,  FUKUMOTO HIROBUMI ,  TAKASHIMA YUKIO

IPC: G01B11/02 ,  G01N21/88 ,  G01N21/956 ,  G03F1/84 ,  G06T1/00 ,  H01L21/66

Abstract: PURPOSE:To improve the accuracy of the dimension measurement of the line width of a registration pattern by varying continuously the wavelength of reference light beams to a sample which has the registration pattern formed on a substrate. CONSTITUTION:A monochromator part 8 varies the wavelength of the reference light beams 2 from a light source 7 continuously and irradiates the sample 1 which has the registration pattern 5 formed on the substrate 6 with the reference light beams 2. At this time, the wavelength of the reference light beams 2 with which the incident light beams 4 and reflected light beams 4' of the reference light beams 2 interfere with each other in the pattern film 5 of the sample 1 as shown in a figure 2, namely, the intensity of the reflected light beams 3 of the pattern 5 is minimum is found. The intensity of the reflected light beams 3 becomes minimum when the reference light beams with wavelength matching the film thickness (d) of the pattern is projected and the reference light beams 2 with the wavelength is projected on the sample 1 to measure the line width of the pattern 5. Consequently, the difference in the intensity of reflected light beams 3' between the substrate 6 and pattern 5 becomes maximum and an image which has clear light and shade is applied from a detector 11 to a CPU to obtain an easy-to-recognize state in image processing, thereby improving the accuracy of the dimension measurement of the line width.

公开(公告)号：JPS63133626A

公开(公告)日：1988-06-06

申请号：JP28241886

申请日：1986-11-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUDA YOSHIMITSU ,  OKUMA TORU ,  TAKASHIMA YUKIO

IPC: H01L21/027 ,  G03C5/00 ,  G03F7/00 ,  G03F7/38 ,  H01L21/30

Abstract: PURPOSE:To easily improve resolution and a contrast of a single layer resist and to enable a fine resist pattern to be stably formed with high reproducibility, by coating a semiconductor substrate's main surface with a photoresist and irradiating the whole surface with far ultraviolet rays while performing heat treatment for the substrate and next performing usual exposure and developing processes. CONSTITUTION:A semiconductor substrate 1's main surface is coated with a photoresist 2, and the whole surface is irradiated with far ultraviolet rays while performing heat treatment for the substrate, and next usual exposure and developing processes are performed. For example, a posi type photoresist 2 is formed 1 mum in thickness on a silicon substrate 1 by a rotary coating method, and baking at 100 deg.C for 60 sec. is performed by a hot plate 3, and next far ultraviolet-ray irradiation for the substrate is performed for 2 to 5 sec. while a temperature of the substrate is kept 100 deg.C. Thereafter, exposure is performed through a reticle mask by the use of a stepper of 436 nm in exposure wavelength, and a developing liquid is used to perform development, and next post baking at 120 deg.C for 90 sec. is performed to obtain a resist pattern. Hence, side walls of the formed resist pattern become steep, and so a contrast and resolution can be improved.

公开(公告)号：JPS6373522A

公开(公告)日：1988-04-04

申请号：JP21745486

申请日：1986-09-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUMA TORU ,  TAKASHIMA YUKIO ,  OKUDA YOSHIMITSU

IPC: G03C5/00 ,  G03F7/00 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To improve the contrast of a resist while maintaining the simplicity of a single-layer resist method, and form stably a resist pattern having a high aspect ratio, by a method wherein photo resist is spread, a specified pattern is exposed applying ultraviolet rays, the whole part of a main surface is irradiated with a far ultraviolet rays, and then development is performed. CONSTITUTION:After a specified pattern is transferred and exposed on a photo resist applying a mask aligner, the whole surface is irradiated by far ultraviolet rays. The dissolving speed of resist of the exposed part at the time of development is given a gradient as follows; the speed is small on the resist surface and becomes larger as the depth increases. Thereby the contrast of resist can be improved. For example, the luminous intensity of whole surface radiation of the far ultraviolet rays is about 10mW/cm according to the result of measurement by a 245nm sensor. As for development condition, the puddle phenomena is employed at 23 deg.C for 40 sec. A contrast value gamma=0.9 in the usual method (wherein, after exposure, development is performed without the whole surface irradiation of the far ultraviolet rays) is improved about twice, that is gamma=1.7, by irradiating the far ultraviolet rays for 6 seconds. When far ultraviolet rays are radiated, the temperature of the wafer is not lower than 80 deg.C and not higher than 130 deg.C, and a remarkable effect can be obtained.

公开(公告)号：JPH03227513A

公开(公告)日：1991-10-08

申请号：JP2244990

申请日：1990-02-01

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASHIMA YUKIO ,  OKUMA TORU

IPC: G03F7/26 ,  G03F7/16 ,  H01L21/027

Abstract: PURPOSE:To lessen the difference in thickness between resist on the upper parts of the steps of a substrate and that on the lower parts thereof by forming a first photoresist film containing solvent and low-solvent-concentration second photoresist film and performing heat treatment. CONSTITUTION:A diluted resist is applied by spin-coating to a stepped semiconductor substrate 2 to form a diluted resist film 1. A resist film 3 is formed by spin-coating on the diluted resist film 1. The whole semiconductor substrate 2 is mounted on a hot plate 4 and the resist films 1 and 3 formed on the semiconductor substrate 2 are heated to dry at 100 deg.C for 120 seconds with the hot plate 4. Thereby the diluted resist film layer 1 on the lower parts of the steps is thinned much by drying by heat, therefore the difference in thickness between the resist on the upper parts of the steps and that on the lower parts thereof is lessened.

公开(公告)号：JPS63202025A

公开(公告)日：1988-08-22

申请号：JP3388087

申请日：1987-02-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUDA YOSHIMITSU ,  INOUE MORIO ,  TAKASHIMA YUKIO ,  OKUMA TORU

IPC: G03F7/38 ,  G03C5/00 ,  G03F7/00 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To improve the resolution and the contrast of a single resist layer, by applying the photoresist, performing heat treatment from the surface side of the photoresist, and imparting sensitivity gradient in the direction toward the inside from the main surface. CONSTITUTION:A photoresist layer 2 is applied on the main surface of a silicon substrate 1. Thereafter, prebaking is performed by using a hot plate. Then, infrared rays are applied on the surface side of the photoresist from an infrared- ray projecting apparatus. An exposed part 7 is formed by exposure using a mask, on which a chromium pattern 5 is formed, on a photo mask glass substrate 4. Then development is performed by using a dedicated developing liquid by an ordinary static paddle method. A photoresist pattern 8 is formed by post baking. Thus the sidewall of the resist pattern rises up steeply, the contrast is improved and the resolution can be improved.

公开(公告)号：JPS63115337A

公开(公告)日：1988-05-19

申请号：JP26224786

申请日：1986-11-04

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUMA TORU ,  TAKASHIMA YUKIO

IPC: H01L21/027 ,  G03C5/00 ,  G03F7/00 ,  G03F7/40 ,  H01L21/30

Abstract: PURPOSE:To enable resist patterns with high heat resistant and plasma resistant characteristics to be formed stably by a method wherein photoresist patterns are formed by exposure development process and after low temperature heat treatment, by overall surface irradiation with ultraviolet rays in wave length not exceeding a specified value. CONSTITUTION:For example an aluminium layer 2 is provided on a semiconductor substrate 1 to form specified circuit wiring patterns of photoresist 3. Next' when the photoresist 3 is heated by a hot plate 4 to be irradiated with ultraviolet rays 5, the heat treatment is performed at 100-150 deg.C as a low temperature typical example of heat treatment subject to no change in the shape of photoresist to successively irradiate the overall surface of photoresist 3 with ultraviolet rays in wavelength not exceeding 320 nm. Later, the photoresist 3 is heated normally at the temperature exceeding 200 deg.C as the additional heat treatment at higher temperature required for the next reactive ion etching process. Through these procedures, photoresist patterns with stable high heat resistant and plasma resistant characteristics can be formed.