公开(公告)号：US3512958A

公开(公告)日：1970-05-19

申请号：US3512958D

申请日：1967-05-01

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASUMI ,  TAKAYANAGI SHIGETOSHI

IPC: C22B30/04 ,  C22C28/00 ,  C22B33/00

CPC classification number: C22C28/00 ,  C22B30/04

公开(公告)号：US3485731A

公开(公告)日：1969-12-23

申请号：US3485731D

申请日：1967-05-01

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASUMI ,  INOUE MORIO

IPC: C25F3/12 ,  C23B3/02 ,  B23P1/00

CPC classification number: C25F3/12

公开(公告)号：DE1621110B1

公开(公告)日：1971-06-24

申请号：DEM0073781

申请日：1967-04-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASUMI ,  INOUE MORIO

IPC: C25F3/12 ,  C23B3/02

Abstract: 1,153,535. Electrolytically etching indium arsenide. MATSUSHITA ELECTRONICS CORP. April 24, 1967 [May 9, 1966], No. 18724/67. Heading C7B. An indium arsenide crystal, e.g. mechanically lapped with Al a O 3 or SiC polishing material, is electrolytically etched by introducing it as an anode into a bath comprising by volume one part 98% concentrated nitric acid and 1 to 3 parts ethylene glycol to obtain a smooth mirror surface suitable for semi-conductor devices. The current density is preferably 1 - 5 A/cm 2 and the bath temperature 20 - 40‹ C. A Pt plate cathode is used. Prior art electrolytic etching uses a perchloric and acetic acid bath, and a potassium ferrocyanide and hydroxide bath.

公开(公告)号：DE1558421B1

公开(公告)日：1970-09-24

申请号：DE1558421

申请日：1967-04-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASUMI ,  TAKAYANGI SHIGETOSHI

IPC: C22B30/04 ,  C22C28/00 ,  C22B33/00