公开(公告)号：GB2534204A

公开(公告)日：2016-07-20

申请号：GB201500785

申请日：2015-01-17

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： LUC BUYDENS ,  SAM MADDALENA ,  NEDELEV PETKO

IPC: H01L21/78 ,  B81C1/00

Abstract: A method of producing a substantially rectangular semiconductor device 11 having at least one corner truncation 21 or corner cut-out 22 or side cut-out 31, comprises: a) providing a semiconductor substrate; b) making at least one opening 4 through the substrate by means of etching; and c) cutting the substrate along a first pair 5 of parallel lines, and along a second pair 6 of parallel lines perpendicular to the first pair. At least one of the dicing lines of the first/second pair passes through said opening 4. The etching may be any combination of existing isotropic/anisotropic front/back etching techniques. The through hole 22, cut-out or truncation may be performed by two different etching steps. The cut-out substrate may be used in a transistor outline package and may have elongated legs, which correspond to internal wire connection points 72. This method allows for the fabrication of MEMS semiconductor devices, wherein the substrate is shaped around obstructions by positioning them in the locations of the cut-outs; thus maximising the size of the die within the package.

公开(公告)号：GB2532733A

公开(公告)日：2016-06-01

申请号：GB201420907

申请日：2014-11-25

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： CARL VAN BUGGENHOUT ,  APPO VAN DER WIEL ,  LUC BUYDENS

IPC: G01J5/02 ,  G01J5/04 ,  G01J5/06 ,  G01J5/08 ,  G01J5/12

Abstract: A chip 100 for radiation measurements comprises a first substrate 110 comprising a first sensor 111 and a second sensor 116. The chip 100 also comprises a second substrate 120 comprising a first cavity 121 and a second cavity 126 both with oblique walls. An internal layer 128 such as a reflective or absorption layer is present on the inside of the second cavity 126 and prevents radiation from reaching the second sensor 116. The second substrate 120 is sealed to the first substrate with the cavities 121, 126 on the inside such that the first cavity 121 is above the first sensor 111 and the second cavity 126 is above the second sensor 116. A barrier 140 may be present between the two cavities. The sensors 111, 116 may be infra-red thermopile sensors. The second sensor 116 may be a compensating or reference sensor.