公开(公告)号：JP2001319487A

公开(公告)日：2001-11-16

申请号：JP2001083671

申请日：2001-03-22

Applicant: MICROCHIP TECH INC

Inventor： GERBER DONALD S ,  HEWITT KENT D ,  DAVIES DAVID M ,  SHELDS JEFFREY

IPC: G11C16/02 ,  G11C16/10 ,  G11C16/14 ,  G11C16/34 ,  H01L21/8247 ,  H01L27/115

Abstract: PROBLEM TO BE SOLVED: To provide an operation method for making the array of memory cells compact and compressing a memory cell densely. SOLUTION: This method is a method for operating memories including memory cells of the first and the second groups. The first group cells formed in a first semiconductor region are connected effectively to word lines and individual bit line, and the second group cells formed in a second semiconductor region are connected effectively to word lines and individual bit liens. This method includes a process applying first voltage to the word lines, a process applying second voltage to the first semiconductor region, a process applying selected voltage the bit lines of the first group cells, a process applying fourth voltage to the second semiconductor region, and a process applying fifth voltage to the bit lines of the second group cells.