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1.发明公开INDEPENDENTLY PROGRAMMABLE MEMORY SEGMENTS IN ISOLATED N-WELLS WITHIN A PMOS EEPROM ARRAY AND METHOD THEREFOR 有权一个PMOS EEPROM器件内的隔离的N阱可独立编程的存储器区段的制造方法
公开(公告)号：EP1090425A1
公开(公告)日：2001-04-11
申请号：EP00918141.3
申请日：2000-03-17
Applicant: MICROCHIP TECHNOLOGY INC.
Inventor： GERBER, Donald, S. , YACH, Randy, L. , HEWITT, Kent, D. , SPADINI, Gianpaolo
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/11521 , G11C16/0416 , H01L27/0207 , H01L27/11519
Abstract: An array of P-channel memory cells is separated into independently programmable memory segments by creating multiple, electrically isolated N-wells upon which the memory segments are fabricated. The methods for creating the multiple, electrically isolated N-wells include p-n junction isolation and dielectric isolation.
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2.发明授权Methods of forming independently programmable memory segments in isolated N-wells within a PMOS EEPROM device 有权一个PMOS EEPROM器件内的隔离的N阱可独立编程的存储器区段的制造方法
公开(公告)号：EP1090425B1
公开(公告)日：2012-06-27
申请号：EP00918141.3
申请日：2000-03-17
Applicant: MICROCHIP TECHNOLOGY INC.
Inventor： GERBER, Donald, S. , YACH, Randy, L. , HEWITT, Kent, D. , SPADINI, Gianpaolo
IPC: H01L27/115 , H01L21/8247 , G11C16/04 , H01L27/02
CPC classification number: H01L27/11521 , G11C16/0416 , H01L27/0207 , H01L27/11519
Abstract: An array of P-channel memory cells is separated into independently programmable memory segments by creating multiple, electrically isolated N-wells upon which the memory segments are fabricated. The methods for creating the multiple, electrically isolated N-wells include p-n junction isolation and dielectric isolation.
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